A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

A resonator includes an anchor, an outer stiffener ring on an outer perimeter of the resonator, and a plurality of curved springs between the anchor and the outer stiffener ring.

The present invention provides a micro evaporator, an oscillator integrated micro evaporator structure and a frequency correction method thereof. The micro evaporator comprises a micro evaporation platform, anchor points, supporting beams and metal electrodes, wherein one surface of the micro evaporation platform is an evaporation surface; the anchor points are located on two sides of the micro evaporation platform and have a certain distance to the micro evaporation platform; the supporting beams are located between the micro evaporation platform and the anchor points, one end of each supporting beam is connected with the micro evaporation platform and the other end is connected with the anchor point; the size of each supporting beam satisfies the following relation: T=P(L/2kbh)+T.sub.a; and the metal electrodes are located on first surfaces of the anchor points.

A micromechanical resonator is disclosed. The resonator includes a resonant micromechanical element. A film of annealable material deposited on a facial surface of the element. In one instance, the resonance of the element can be adjusting by using a feedback loop to control annealing of the deposited film.

A bulk acoustic wave resonator includes a substrate, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, an upper electrode connection member, and a dielectric layer in which the lower electrode, the piezoelectric layer, and the upper electrode are embedded. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. An extension portion extends away from either the lower electrode or the upper electrode to protrude outwardly from the resonant portion. A capacitor portion is constituted by the extension portion, a portion of the upper electrode connection member disposed above the extension portion, and a portion of the dielectric layer disposed between the extension portion and the portion of the upper electrode connection member disposed above the extension portion.

A continuous or distributed resonator geometry is defined such that the fabrication process used to form a spring mechanism also forms an effective mass of the resonator structure. Proportional design of the spring mechanism and/or mass element geometries in relation to the fabrication process allows for compensation of process-tolerance-induced fabrication variances. As a result, a resonator having increased frequency accuracy is achieved.

A continuous or distributed resonator geometry is defined such that the fabrication process used to form a spring mechanism also forms an effective mass of the resonator structure. Proportional design of the spring mechanism and/or mass element geometries in relation to the fabrication process allows for compensation of process-tolerance-induced fabrication variances. As a result, a resonator having increased frequency accuracy is achieved.

A resonance device that includes a lower cover formed from non-degenerate silicon; a resonator having a degenerate silicon substrate with a lower surface facing the lower cover, and including first and second electrode layers laminated on the substrate with a piezoelectric film formed therebetween and having a surface opposing an upper surface of the substrate. Moreover, the lower surface of the substrate has an adjustment region where a depth or height of projections and recesses formed on the surface is larger than that in another region of the lower surface of the substrate or is a region where an area of the projections and recesses is larger than that in the other region of the lower surface of the substrate.

A continuous or distributed resonator geometry is defined such that the fabrication process used to form a spring mechanism also forms an effective mass of the resonator structure. Proportional design of the spring mechanism and/or mass element geometries in relation to the fabrication process allows for compensation of process-tolerance-induced fabrication variances. As a result, a resonator having increased frequency accuracy is achieved.

A method of manufacturing a resonance device includes preparing a resonance device and adjusting a frequency of the resonator. The resonance device includes a lower lid, an upper lid joined to the lower lid, and a resonator with vibration arms that vibrate in bending vibration in an interior space between the lower and upper lids. The adjusting of the frequency of the resonator includes vibrating the vibration arms in bending vibration and thereby causing respective ends of the arms to strike the lower lid at an impact speed of 3.5?10.sup.3 ?m/sec or more. The ends of the vibration arms are made of silicon oxide, and the lower lid is made of silicon.