In a MEMS device having a substrate and a moveable micromachined member, a mechanical structure secures the moveable micromachined member to the substrate, thermally isolates the moveable micromachined member from the substrate and provides a conduction path to enable heating of the moveable micromachined member to a temperature of at least 300 degrees Celsius.

In a MEMS device having a substrate and a moveable micromachined member, a mechanical structure secures the moveable micromachined member to the substrate, thermally isolates the moveable micromachined member from the substrate and provides a conduction path to enable heating of the moveable micromachined member to a temperature of at least 300 degrees Celsius.

An apparatus comprises a micromechanical system including a semiconductor body. The semiconductor body comprises a first resonator, a second resonator, and a supporting portion. The first resonator is to resonate at a first resonating frequency that is generally frequency-stable over a predetermined temperature range. The second resonator is to resonate at a second resonating frequency that is generally linearly decreasing or increasing as temperature increases over the predetermined temperature range. The supporting portion is to support both the first resonator and the second resonator.

A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

Frequency stabilization is provided in a microelectromechanical systems (MEMS) oscillator via tunable internal resonance (IR). A device comprises a MEMS resonator comprising a stepped-beam structure that is a thin-layer structure. The resonator may be configured to implement IR. The stepped-beam structure may be configured to provide flexibility to adjust modal frequencies into a n:m ratio, wherein n and m are integers. The thin-layer structure provides frequency tunability by controlling the mid-plane stretching effect with an applied DC bias. The thin-layer structure compensates for a frequency mismatch from a n:m ratio due to a fabrication error. The MEMS resonator may be an oscillator.

A resonance device includes: a resonator and a first substrate. The resonator includes a vibration part, a frame disposed at at least a portion of a circumference of the vibration part, and a supporting arm configured to connect the vibration part and the frame. The first substrate includes a first bottom plate configured to have a first gap to the vibration part in a thickness direction. The vibration part includes a vibration arm configured to perform out-of-plane bending vibration. The vibration arm includes a tip-end part with a base-end-side portion and a tip-end-side portion that is closer to an open-end side of the vibration arm than the base-end-side portion, the base-end-side portion has a first surface that includes a metal film facing the first bottom plate, the tip-end-side portion has a second surface that includes silicon facing the first bottom plate.

Frequency stabilization is provided in a microelectromechanical systems (MEMS) oscillator via tunable internal resonance (IR). A device comprises a MEMS resonator comprising a stepped-beam structure that is a thin-layer structure. The resonator may be configured to implement IR. The stepped-beam structure may be configured to provide flexibility to adjust modal frequencies into a n:m ratio, wherein n and m are integers. The thin-layer structure provides frequency tunability by controlling the mid-plane stretching effect with an applied DC bias. The thin-layer structure compensates for a frequency mismatch from a n:m ratio due to a fabrication error. The MEMS resonator may be an oscillator.

An apparatus comprises a micromechanical system including a semiconductor body. The semiconductor body comprises a first resonator, a second resonator, and a supporting portion. The first resonator is to resonate at a first resonating frequency that is generally frequency-stable over a predetermined temperature range. The second resonator is to resonate at a second resonating frequency that is generally linearly decreasing or increasing as temperature increases over the predetermined temperature range. The supporting portion is to support both the first resonator and the second resonator.