Patent classifications
H03H7/175
CRYOGENIC ON-CHIP MICROWAVE FILTER FOR QUANTUM DEVICES
An on-chip microwave filter circuit includes a substrate formed of a first material that exhibits at least a threshold level of thermal conductivity, wherein the threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum computing circuit operates. The filter circuit further includes a dispersive component configured to filter a plurality of frequencies in an input signal, the dispersive component including a first transmission line disposed on the substrate, the first transmission line being formed of a second material that exhibits at least a second threshold level of thermal conductivity, where the second threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum computing circuit operates. The dispersive component further includes a second transmission line disposed on the substrate, the second transmission line being formed of the second material.
FILTER CIRCUIT FOR REDUCING FEEDBACK OF A CONSUMER ON AN ENERGY SUPPLY
A filter circuit for reducing feedback of a consumer on an energy supply is disclosed. This filter circuit includes a multipolar input, a line choke, and a multipolar output, wherein the input is configured to receive an AC voltage from the energy supply, wherein the output is configured to be connected to the consumer, wherein the line choke includes one coil for each pole of the input, and wherein the coils of the line choke are each connected between one pole of the input and one pole of the output and energy is transferred from the input to the output and/or vice versa. A resonant current suppression (RCS) group is connected in parallel to a coil of the line choke to transmit resonant currents arising at the line choke such that voltage increases generated by the resonant currents are reduced or suppressed by the at least one RCS circuit.
Cryogenic on-chip microwave filter for quantum devices
An on-chip microwave filter circuit includes a substrate formed of a first material that exhibits at least a threshold level of thermal conductivity, wherein the threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum computing circuit operates. The filter circuit further includes a dispersive component configured to filter a plurality of frequencies in an input signal, the dispersive component including a first transmission line disposed on the substrate, the first transmission line being formed of a second material that exhibits at least a second threshold level of thermal conductivity, wherein the second threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum computing circuit operates. The dispersive component further includes a second transmission line disposed on the substrate, the second transmission line being formed of the second material.
FRONTEND MODULE
A frontend module includes a first filter having a passband of a first frequency band, a second filter having a passband of a second frequency band, the second frequency band being higher than the first frequency band, a third filter having a passband of a third frequency band, the third frequency band being higher than the second frequency band, and a sub-filter, connected to the second filter, configured to provide attenuation characteristics for the first frequency band, wherein the second filter comprises a plurality of parallel LC resonance circuits arranged between a ground and different nodes, from among a plurality of nodes between a first terminal and a second terminal, wherein an inductor is connected to a portion of the plurality of parallel LC resonance circuits.
Magnetless non-reciprocal devices using modulated filters
A magnet-free non-reciprocal device realized using modulated filters. The device includes one or more filters in one or more branches, where each branch connects two ports or a port and a central node. The poles and zeros of each of the first, second and third filters are modulated in time such that degenerate modes at each pole and zero is split thereby destructively interfering at one or more output ports and adding up at another output port allowing non-reciprocal transmission, isolation and/or non-reciprocal phase shift. The device is able to realize a magnet-free full-duplex communication scheme implementing a magnet-free circulator for radio frequency cancellation or a magnet-free isolator or gyrator.
Superconducting combiner or separator of DC-currents and microwave signals
Techniques that facilitate a superconducting combiner or separator of DC-currents and microwave signals are provided. In one example, a device includes a direct current circuit and a microwave circuit. The direct current circuit comprises a bandstop circuit and provides transmission of a direct current signal. The microwave circuit provides transmission of a microwave signal. The microwave circuit and the direct current circuit that comprises the bandstop circuit are joined by a common circuit that provides transmission of the direct current signal and the microwave signal.
Band pass filter
A band pass filter includes: a first circuit unit including a first series LC resonant circuit disposed between a first terminal and a second terminal; a second circuit unit disposed between the first circuit unit and the second terminal, and including a first parallel LC resonant circuit; and a third circuit unit disposed between the first terminal and a ground, and including a second series LC resonant circuit, wherein a resonant frequency of the first circuit unit is in a pass band.
FILTER CIRCUIT AND FILTER DEVICE
A filter circuit that secures the steepness from a pass range to an attenuation range while maintaining a wide-band transmission characteristic and a filter device including this filter circuit are formed. A filter circuit includes a first filter and a second filter. The first filter is a filter including an LC circuit in which a first frequency band is a pass band and a frequency band not higher than the first frequency band is an attenuation band. The second filter is a filter that attenuates a second frequency band within the first frequency band by using an attenuation pole produced by a resonance or an antiresonance of an acoustic wave resonator. Further, the first filter is placed closer to an antenna terminal than the second filter.
Multilayer Electronic Device Including a High Precision Inductor
A multilayer electronic device may include a plurality of dielectric layers and a signal path having an input and an output. An inductor may include a conductive layer formed on one of the plurality of dielectric layers and may be electrically connected at a first location with the signal path and electrically connected at a second location with at least one of the signal path or a ground. The inductor may include an outer perimeter that includes a first straight edge facing outward in a first direction and a second straight edge parallel to the first straight edge and facing outward in the first direction. The second straight edge may be offset from the first straight edge by an offset distance that is less than about 500 microns and less than about 90% of a first width of the inductor in the first direction at the first straight edge.
Multilayer Filter Including a Capacitor Connected with at Least Two Vias
A multilayer filter may include a plurality of dielectric layers stacked in a Z-direction. A first conductive layer may overlie one of the dielectric layers, and a second conductive layer may overlie another of the dielectric layers and be spaced apart from the first conductive layer in the Z-direction. A first via may be connected with the second conductive layer at a first location. A second via may be connected with the second conductive layer at a second location that is spaced apart in a first direction from the first location. The first conductive layer may overlap the second conductive layer at an overlapping area to form a capacitor. At least a portion of the overlapping area may be located between the first location and the second location in the first direction. The second conductive layer may be free of via connections that intersect the overlapping area.