H03H7/1775

Weakly coupled tunable RF receiver architecture

RF communications circuitry, which includes a first tunable RF filter and a first RF low noise amplifier (LNA) is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The first RF LNA is coupled to the first tunable RF filter, and receives and amplifies an RF input signal to provide an RF output signal.

Advanced 3D inductor structures with confined magnetic field

Embodiments of an apparatus that includes a substrate and an inductor residing in the substrate are disclosed. In one embodiment, the inductor is formed as a conductive path that extends from a first terminal to a second terminal. The conductive path has a shape corresponding to a two-dimensional (2D) lobe laid over a three-dimensional (3D) volume. Since the shape of the conductive path corresponds to the 2D lobe laid over a 3D volume, the magnetic field generated by the inductor has magnetic field lines that are predominately destructive outside the inductor and magnetic field lines that are predominately constructive inside the inductor. In this manner, the inductor can maintain a high quality (Q) factor while being placed close to other components.

High quality factor interconnect for RF circuits

Embodiments of radio frequency (RF) devices are disclosed having interconnection paths with capacitive structures having improved quality (Q) factors. In one embodiment, an RF device includes an inductor having an inductor terminal and a semiconductor die. The semiconductor die includes one or more active semiconductor devices that include a device contact. The device contact provided by the one or more active semiconductor devices is positioned so as to be vertically aligned directly below the inductor terminal. The inductor terminal and the device contact are electrically connected with an interconnection path that includes a capacitive structure. To prevent or reduce current crowding, the interconnection path is vertically aligned so as to extend directly between the inductor terminal and the device contact. In this manner, the interconnection path electrically connects the inductor terminal and the device contact without degrading the Q factor of the RF device.

Wide bandwidth muliplexer based on LC and acoustic resonator circuits for performing carrier aggregation

A wide bandwidth multiplexer (MUX) is provided that performs carrier aggregation. The MUX combines at least a first LC filter that acts as a low band filter, at least a first composite filter that acts as a middle band filter, and at least one other LC or composite filter that acts as a high band filter. The wide bandwidth MUX has low insertion loss and provides sufficient attenuation at adjacent edges of adjacent pass bands to prevent overlap between adjacent pass bands.

Electronic component
09882544 · 2018-01-30 · ·

An electronic component includes first through sixth LC parallel resonators and seventh through ninth capacitors. The first through sixth LC parallel resonators are arranged in this order in a first direction perpendicular or substantially perpendicular to a stacking direction of a multilayer body of the electronic component, and define a band pass filter. The seventh capacitor is connected between the first and sixth LC parallel resonators. The eighth capacitor is connected between the first and third LC parallel resonators. The ninth capacitor is connected between the fourth and sixth LC parallel resonators.

Electronic component
09882541 · 2018-01-30 · ·

An electronic component includes first through n-th inductors that turn around as viewed from a first direction perpendicular or substantially perpendicular to a stacking direction of a multilayer body of the electronic component. An (n+1)-th inductor includes a linear (n+1)-th inductor conductive layer which is provided in a configuration in which it turns around, as viewed from the stacking direction, and which is located within a region surrounded by the first inductor, as viewed from the first direction. An (n+1)-th capacitor is electrically connected to a first outer electrode, and includes an (n+1)-th capacitor conductive layer which opposes a first inductor conductive layer defining the first inductor with an insulating layer of a plurality of insulating layers of the multilayer body interposed therebetween.

ADVANCED 3D INDUCTOR STRUCTURES WITH CONFINED MAGNETIC FIELD
20180019045 · 2018-01-18 ·

Embodiments of an apparatus that includes a substrate and an inductor residing in the substrate are disclosed. In one embodiment, the inductor is formed as a conductive path that extends from a first terminal to a second terminal. The conductive path has a shape corresponding to a two-dimensional (2D) lobe laid over a three-dimensional (3D) volume. Since the shape of the conductive path corresponds to the 2D lobe laid over a 3D volume, the magnetic field generated by the inductor has magnetic field lines that are predominately destructive outside the inductor and magnetic field lines that are predominately constructive inside the inductor. In this manner, the inductor can maintain a high quality (Q) factor while being placed close to other components.

Multi-band impedance tuners using weakly-coupled LC resonators

Radio frequency (RF) filter structures and related methods and RF front-end circuitry are disclosed. In one embodiment, an RF filter structure includes a first terminal and a first tunable RF filter path defined between the first terminal and a second terminal. The first tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a first frequency. The first frequency may be provided within a first frequency band. Additionally, the RF filter structure includes a second tunable RF filter path defined between the first terminal and the second terminal. The second tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a second frequency. The second frequency may be within a second frequency band. In this manner, the RF filter structure is configured to provide impedance tuning for multiple impedance bands simultaneously.

Front-end circuit having a tunable filter
09866266 · 2018-01-09 · ·

A front-end circuit with a tunable filter is disclosed. In an embodiment, the front end circuit includes a first signal path connected to an antenna connection, a first filter arranged in the first signal path, wherein the first filter is tunable within a first frequency range, and an extra signal path and a first fixed filter arranged therein, wherein the first fixed filter has a passband for an extra frequency band, wherein the first fixed filter is not tunable, and wherein the extra frequency band is arranged outside or inside the first frequency range. The front end circuit further includes a narrowband antenna tuner configured to be set to a respective tunable frequency range, wherein the narrowband antenna tuner is arranged between the first filter, the first fixed filter and the antenna connection in the first and second signal paths.

Tunable RF filter based RF communications system

RF communications circuitry, which includes a first RF filter structure, is disclosed. The first RF filter structure includes a first tunable RF filter path and a second tunable RF filter path. The first tunable RF filter path includes a pair of weakly coupled resonators. Additionally, a first filter parameter of the first tunable RF filter path is tuned based on a first filter control signal. A first filter parameter of the second tunable RF filter path is tuned based on a second filter control signal.