RF communications circuitry, which includes a first tunable RF filter and an RF power amplifier (PA), is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The RF PA is coupled to the first tunable RF filter, and receives and amplifies an RF input signal to provide an RF output signal.

Embodiments of radio frequency (RF) front-end circuitry are disclosed where the RF front-end circuitry includes a tunable RF filter structure and a calibration circuit. The tunable RF filter structure includes (at least) a pair of weakly coupled resonators and defines a transfer function with a passband. The calibration circuit is configured to shape the passband so that the passband defines a center frequency. Additionally, the calibration circuit is configured to detect a phase difference at the target center frequency between the pair of weakly coupled resonators and adjust the phase difference of the pair of weakly coupled resonators at the target center frequency so as to reduce a frequency displacement between the center frequency of the passband and the target center frequency. In this manner, the calibration circuit calibrates the tunable RF filter structure to correct for errors in the center frequency of the passband due to component manufacturing variations.

RF front-end circuitry, which includes a first RF low noise amplifier (LNA) and a first reconfigurable RF filter, is disclosed. The RF front-end circuitry operates in one of a group of operating modes. The first reconfigurable RF filter, which has a first reconfigurable RF filter path, includes a first receive (RX) shunt switching element coupled between the first reconfigurable RF filter path and ground. The first reconfigurable RF filter path is coupled to an input of the first RF LNA. The group of operating modes includes a first operating mode and a second operating mode. During the first operating mode, the first RX shunt switching element is ON. During the second operating mode, the first RX shunt switching element is OFF and the first RF LNA receives and amplifies a first filtered RF receive signal from the first reconfigurable RF filter to provide a first receive signal.

A high-frequency module includes a semiconductor chip device that is mounted on an external circuit substrate by wire bonding. A switch forming section, a power amplifier forming section and a low noise amplifier forming section, realized by a group of FETs, which are active elements, are formed in the semiconductor chip device. Flat plate electrodes, which form capacitors are formed in the semiconductor chip device. Conductor wires that connect the external circuit substrate and the semiconductor chip device function as inductors. A group of passive elements that includes inductors and capacitors is formed. As a result, a high-frequency module that can be reduced in size while still obtaining the required transmission characteristic is realized.

A termination/attenuation network applies to an input of a set-top box a MOCA channel signal having a narrow band of frequencies and included in RF signals having a wide band of frequencies received via a cable from a satellite antenna. The network includes a pair of series resistors and a parallel resistor coupled to a junction terminal between the pair of series resistors in a T-shaped configuration. A series-pass band-pass filter (L1, C2) bypasses the pair of series resistors and a parallel band stop filter (L2, C1) decouples the parallel resistor at the frequency band of the MOCA channel signal for selectively reducing attenuation at the frequency band of the MOCA channel signal.

Circuitry, which includes a package interface, a radio frequency (RF) amplification circuit, and a closed-loop gain linearization circuit. The package interface receives an RF signal and provides an amplified RF signal. The RF amplification circuit amplifies the RF signal in accordance with a gain of the RF amplification circuit so as to generate the amplified RF signal. In one embodiment, the closed-loop gain linearization circuit is configured to endogenously establish a target gain magnitude using the RF signal and linearize the gain of the RF amplification circuit in accordance with the target gain magnitude. By endogenously establishing the target gain magnitude using the RF signal, the closed-loop gain linearization circuit can provide linearity with greater independence from external control circuitry.

A resonant element includes first, second, and third plane electrodes, a first via electrode defining a first inductor, a second inductor, and a third inductor. The first via electrode connects the first plane electrode and the second plane electrode, and each of the second inductor and the third inductor connects the first plane electrode and the third plane electrode. The third plane electrode defines a first capacitor together with the second plane electrode, the second inductor includes second via electrodes, and the third inductor includes third via electrodes. Each of the second via electrodes and the third via electrodes is a columnar conductor extending in the extending direction of the first via electrode.

Apparatus and methods for tunable filters are provided. In certain configurations, a tunable filter includes a semiconductor die attached to a laminated substrate, such as a substrate of a multi-chip module (MCM). The tunable filter includes a vector inductor implemented using two or more conductors arranged on different conductive layers of the laminated substrate. The vector inductor's conductors are inductively coupled to one another and electrically connected in parallel to provide the vector inductor with high quality factor (Q-factor). The semiconductor die includes a variable capacitor that is electrically connected with the vector inductor to operate as a tunable resonator. Additionally, a frequency characteristic of the tunable filter, such as a passband, can be controlled by selecting a capacitance value of the variable capacitor, thereby tuning a resonance of the resonator.

The present disclosure provides a radio frequency duplexer circuit and a radio frequency substrate. The radio frequency duplexer circuit includes a first terminal, a second terminal, a third terminal, a low-pass filter, and a high-pass filter. The low-pass filter includes N first filter sub-circuits coupled in series and a first tuning sub-circuit. Among the N first filter sub-circuits coupled in series, a first end of a 1.sup.st first filter sub-circuit is coupled to the first terminal, and a second end of a N.sup.th first filter sub-circuit is coupled to the second terminal. The high-pass filter includes M second filter sub-circuits coupled in series and a second tuning sub-circuit. Among the M second filter sub-circuits coupled in series, a first end of a 1.sup.st second filter sub-circuit is coupled to the first terminal, and a second end of a M.sup.th second filter sub-circuit is coupled to the third terminal.

A low-pass filter includes first to third inductors and a capacitor. A first inductor-forming conductor layer constituting at least a part of each of the first and second inductors and a second inductor-forming conductor layer including first and second portions constituting first and second inductor portions of the third inductor are connected by a plurality of first through holes. The first portion and a capacitor-forming conductor layer constituting a part of the capacitor are connected by a plurality of second through holes. The second portion and the capacitor-forming conductor layer are connected by a plurality of third through holes.