H03H9/02023

Vibrator and oscillator
11431314 · 2022-08-30 · ·

A vibrator includes a vibration element having an excitation section which is provided with excitation electrodes, and which excites a thickness shear vibration, and a fixation section electrically coupled to at least one of the excitation electrodes, a vibration attenuator disposed on at least one of principal surfaces of the vibration element, and a support substrate having a coupling electrode which is electrically coupled to the fixation section, and which supports the vibration element, wherein the vibration attenuator is disposed at the fixation section side of the excitation electrodes, and at an outer circumferential edge side of the vibration element from the fixation section in a direction perpendicular to a direction in which the excitation electrodes and the fixation section are arranged side by side.

ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREFOR
20210384883 · 2021-12-09 ·

An electronic device that includes a base substrate having a mounting surface; an electronic component having a mechanical vibration portion mounted on the mounting surface of the base substrate; an intermediate layer mounted on the base substrate and forming an internal space with the base substrate so as to accommodate the electronic component therein, the intermediate layer having at least one through-hole that opens the internal space to an outside; and a sealing layer on the intermediate layer and sealing the internal space by closing the at least one through-hole.

VIBRATOR AND OSCILLATOR
20210384884 · 2021-12-09 ·

A vibrator includes a vibration element having an excitation section which is provided with excitation electrodes, and which excites a thickness shear vibration, and a fixation section electrically coupled to at least one of the excitation electrodes, a vibration attenuator disposed on at least one of principal surfaces of the vibration element, and a support substrate having a coupling electrode which is electrically coupled to the fixation section, and which supports the vibration element, wherein the vibration attenuator is disposed at the fixation section side of the excitation electrodes, and at an outer circumferential edge side of the vibration element from the fixation section in a direction perpendicular to a direction in which the excitation electrodes and the fixation section are arranged side by side.

Bulk acoustic wave structure, bulk acoustic wave device, and manufacturing method thereof
11362637 · 2022-06-14 · ·

A bulk acoustic wave (BAW) structure includes a single crystal piezoelectric material layer, a first electrode, a second electrode and an acoustic reflector. The first and second electrodes are respectively located on a first surface and a second surface of the single crystal piezoelectric material layer. The area of the second electrode is greater than or equal to that of the second surface of the single crystal piezoelectric material layer, and the contact area of the single crystal piezoelectric material layer with the second electrode is equal to the area of the second surface of the single crystal piezoelectric material layer. The acoustic reflector is disposed on a surface of the first electrode.

Piezoelectric resonator device
11362641 · 2022-06-14 · ·

In a piezoelectric resonator device according to an embodiment, an internal space is formed by bonding a first sealing member to a crystal resonator plate and bonding a second sealing member to the crystal resonator plate. The internal space hermetically seals a vibrating part including a first excitation electrode and a second excitation electrode of the crystal resonator plate. Seal paths that hermetically seal the vibrating part of the crystal resonator plate are formed to have an annular shape in plan view. A plurality of external electrode terminals is formed on a second main surface of the second sealing member to be electrically connected to an external circuit board. The external electrode terminals are respectively disposed on and along an external frame part surrounding the internal space in plan view.

Thickness-shear mode resonators
11359983 · 2022-06-14 · ·

A quartz pressure sensor that resonates in the thickness-shear mode can include a center resonator structure and first and second caps joined to the center resonator structure by bond joints. Each bond joint is comprised of a sealing glass having thickness less than 0.0012 inches (˜30 μm) and a melting point less than 573° C. The quartz pressure sensor can additionally include an inner diameter edge feature formed between the interior sidewall in the joint sidewall of the caps that reduces stresses at the bond joints and/or a high stress point in the cap bore.

Acoustic wave element and method for manufacturing same

An acoustic wave element which can be reduced in size and produced relatively easily, practically used without using harmful substances, and can suppress a surface acoustic wave propagation loss, which has an excellent temperature coefficient of frequency and a velocity dispersion characteristic, and with which an increase in the reflection coefficient of interdigital transducers can be suppressed, and a method for manufacturing the acoustic wave element are provided. The acoustic wave element includes a pair of electrodes provided on both surfaces of a piezoelectric substrate, and a dielectric film provided on a first surface of the piezoelectric substrate so as to cover the electrode. The acoustic wave element alternatively includes interdigital transducers provided on a first surface of the piezoelectric substrate, and a dielectric film provided on the interdigital transducers, a gap between the interdigital transducers, and/or a second surface of the piezoelectric substrate.

Vibrator and oscillator

A vibrator includes: a vibration element that includes a pair of first excitation electrodes formed at the first vibration portion, a pair of second excitation electrodes formed at the second vibration portion, and a pair of third excitation electrodes formed at the third vibration portion, in which one second excitation electrode of the pair of second excitation electrodes is formed at a first inclined surface that is inclined with respect to two main surfaces, and one third excitation electrode of the pair of third excitation electrodes is formed at a second inclined surface that is inclined with respect to the two main surfaces and the first inclined surface; and a package that houses the vibration element. The vibration element includes a fixing portion to be fixed to the package. The fixing portion is provided between the first vibration portion and the second and third vibration portions.

PIEZOELECTRIC RESONATOR UNIT AND OSCILLATOR PROVIDED WITH THE SAME

A piezoelectric resonator unit that includes a base, a cover, and a laminated structure disposed between the base and the cover. The laminated structure includes a piezoelectric resonator having a piezoelectric layer with a pair of principal surfaces facing each other, and a pair of excitation electrodes disposed on respective surfaces of the pair of principal surfaces so as to face each other with the piezoelectric layer therebetween, a semiconductor layer laminated on a side of one of the pair of principal surfaces of the piezoelectric layer, and a pair of measurement electrodes provided on the semiconductor layer. The pair of measurement electrodes measure signals based on temperature of the piezoelectric resonator through the semiconductor layer.

Vibration Device And Oscillator

A vibration device includes a quartz substrate including a first vibration section, a second vibration section, and a third vibration section, a pair of first excitation electrodes formed at two principal surfaces of the quartz substrate, a pair of second excitation electrodes so formed as to sandwich the second vibration section in the thickness direction of the quartz substrate, and a pair of third excitation electrodes so formed as to sandwich the third vibration section in the thickness direction of the quartz substrate. At least one of the pair of second excitation electrodes is formed at a first inclining surface that inclines with respect to the two principal surfaces. At least one of the pair of third excitation electrodes is formed at a second inclining surface that inclines with respect to the two principal surfaces. The second inclining surface inclines with respect to the first inclining surface.