Patent classifications
H03H9/02039
FILTER USING TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATORS WITH TWO FREQUENCY SETTING LAYERS
Acoustic filters and methods are disclosed. A piezoelectric is attached to a substrate, portions of the piezoelectric plate forming one or more diaphragms spanning respective cavities in the substrate. A conductor pattern is formed on a front surface of the piezoelectric plate, the conductor pattern including a plurality of interdigital transducers (IDTs) of a plurality of resonators, interleaved fingers of each of the plurality of IDTs disposed on a respective diaphragm of the one or more diaphragms. A first frequency setting dielectric layer having a first thickness is disposed over the fingers of the IDTs of a first subset of the plurality of resonators. A second frequency setting dielectric layer having a second thickness greater than the first thickness is disposed over the fingers of the IDTs of a second subset of the plurality of resonators, wherein the first subset and the second subset are not identical.
FILTER USING TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATORS WITH MULTIPLE FREQUENCY SETTING LAYERS
Acoustic filters are disclosed. A filter device includes a plurality of resonators connected in a ladder filter circuit, each resonator of the plurality of resonators comprising an interdigital transducer (IDT) with interleaved fingers disposed on a respective piezoelectric diaphragm. A first frequency setting dielectric layer having a first thickness is disposed over the interleaved fingers of one or more IDTs of a first subset of the plurality of resonators. A second frequency setting dielectric layer having a second thickness greater than the first thickness is disposed over the interleaved fingers of one or more IDTs of a second subset of the plurality of resonators, wherein the first subset and the second subset are not identical.
XBAR resonators with non-rectangular diaphragms
Acoustic resonator devices, filter devices, and methods of fabrication are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate, the diaphragm having an edge about a perimeter of the cavity. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. At least a portion of the edge of the diaphragm is at an oblique angle to the fingers and to an X crystalline axis of the piezoelectric plate.
Filter using transversely-excited film bulk acoustic resonators with multiple frequency setting layers
Acoustic filters and methods are disclosed. A single-crystal piezoelectric is attached to a substrate, portions of the piezoelectric plate forming one or more diaphragms spanning respective cavities in the substrate. A conductor pattern is formed on the piezoelectric plate, the conductor pattern including a plurality of interdigital transducers (IDTs) of a plurality of resonators, interleaved fingers of each of the plurality of IDTs disposed on a respective diaphragm of the one or more diaphragms. A first frequency setting dielectric layer having a first thickness is disposed over the fingers of the IDTs of a first subset of the plurality of resonators. A second frequency setting dielectric layer having a second thickness greater than the first thickness is disposed over the fingers of the IDTs of a second subset of the plurality of resonators, wherein the first subset and the second subset are not identical.
Bandpass filter with frequency separation between shunt and series resonators set by dielectric layer thickness
Filter devices and methods of fabrication are disclosed. A filter device includes a piezoelectric plate attached to a substrate, portions of the piezoelectric plate forming diaphragms spanning respective cavities in the substrate. A conductor pattern formed on a surface of the piezoelectric plate includes a plurality of interdigital transducers (IDTs) of a respective plurality of acoustic resonators including a shunt resonator and a series resonator, interleaved fingers of each of the plurality of IDTs disposed on one of the diaphragms. Radio frequency signals applied to the IDTs excite respective primary shear acoustic modes in the respective diaphragms. A thickness of a first dielectric layer disposed on the front surface between the fingers of the IDT of the shunt resonator is greater than a thickness of a second dielectric layer disposed on the front surface between the fingers of the IDT of the series resonator.
WIDE BANDWIDTH TEMPERATURE-COMPENSATED TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR
Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal lithium niobate (LN) plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the LN plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the LN plate such that interleaved fingers of the IDT are disposed on the diaphragm. A half-lambda dielectric layer is formed on one of the front surface and back surface of the diaphragm. Euler angles of the LN plate are [0, , 0], where 2025.
TRANSVERSLY-EXCITED FILM BULK ACOUSTIC RESONATORS AND FILTERS
Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a single-crystal piezoelectric plate. A back surface of a supported portion of the piezoelectric plate is attached to a surface of the substrate. A portion of the piezoelectric plate forms a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate. The IDT includes first and second busbars, and interleaved fingers extending alternately from the first and second busbars. Overlapping portions of the interleaved fingers are disposed on the diaphragm. At least portions of both the first and second busbars are disposed on the supported portion of the piezoelectric plate. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode within the diaphragm.
Transversely-excited film bulk acoustic resonator with etch-stop layer
Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. An aluminum oxide etch-stop layer is sandwiched between the surface of the substrate and the back surface of the piezoelectric plate, a portion of the piezoelectric plate and the etch-stop layer forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate with interleaved fingers of the IDT disposed on the diaphragm. The aluminum oxide etch-stop layer is impervious to an etch process used to form the cavity.
SOLIDLY-MOUNTED TRANSVERSELY EXCITED FILM BULK ACOUSTIC RESONATOR USING ROTATED Y-X CUT LITHIUM NIOBATE
Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator device includes a substrate, a single-crystal lithium niobate plate, an acoustic Bragg reflector sandwiched between a surface of the substrate and a back surface of the lithium niobate plate, and an interdigital transducer (IDT) formed on a front surface of the lithium niobate plate. Euler angles of the lithium niobate plate are [0, , 0], where is greater than or equal to 0 and less than or equal to 60.
Wide bandwidth temperature-compensated transversely-excited film bulk acoustic resonator
Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal lithium niobate (LN) plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the LN plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the LN plate such that interleaved fingers of the IDT are disposed on the diaphragm. A half-lambda dielectric layer is formed on one of the front surface and back surface of the diaphragm. Euler angles of the LN plate are [0, , 0], where 2025.