Patent classifications
H03H9/02039
Transversely-excited film bulk acoustic resonator with a back-side dielectric layer and an etch-stop layer
Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. A back-side dielectric layer is formed on the back surface. An etch-stop layer is sandwiched between the surface of the substrate and the back-side dielectric layer. A portion of the piezoelectric plate, the back-side dielectric layer, and the etch-stop layer forms a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate with interleaved fingers of the IDT disposed on the diaphragm. The etch-stop layer is impervious to an etch process used to form the cavity.
TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH A BACK-SIDE DIELECTRIC LAYER
A bulk acoustic resonator is provided that includes a substrate including a plurality of materials and a cavity disposed therein; a piezoelectric layer attached to the substrate by a first dielectric layer; an interdigital transducer (IDT) on a surface of the piezoelectric layer and having interleaved fingers on a portion of the piezoelectric layer that is over the cavity; and a second dielectric layer disposed over and between the interleaved fingers,
Filter using transversely-excited film bulk acoustic resonators with two frequency setting layers
Acoustic filters are disclosed. A substrate includes a base and an intermediate layer. A piezoelectric plate is attached to the intermediate layer, portions of the piezoelectric plate forming one or more diaphragms spanning respective cavities in the intermediate layer. A conductor pattern on a front surface of the piezoelectric plate includes interdigital transducers (IDTs) of a plurality of resonators, interleaved fingers of each of the IDTs disposed on a respective diaphragm of the one or more diaphragms. A first frequency setting dielectric layer having a first thickness is disposed over the fingers of the IDTs of a first subset of the plurality of resonators. A second frequency setting dielectric layer having a second thickness greater than the first thickness is disposed over the fingers of the IDTs of a second subset of the plurality of resonators, wherein the first subset and the second subset are not identical.
Filters using transversly-excited film bulk acoustic resonators with frequency-setting dielectric layers
Filter devices are disclosed. A filter device includes a piezoelectric plate comprising a supported portion, a first diaphragm, and a second diaphragm. The supported portion is attached to a substrate and the first and second diaphragms spans respective cavities in the substrate. A first interdigital transducer (IDT) has interleaved fingers on the first diaphragm. A second interdigital transducer (IDT) has interleaved fingers on the second diaphragm. A first dielectric layer is between the interleaved fingers of the first IDT, and a second dielectric layer is between the interleaved fingers of the second IDT. A thickness of the first dielectric layer is greater than a thickness of the second dielectric layer. The piezoelectric plate and the first and second IDTs are configured such that radio frequency signals applied to first and second IDTs excite primary shear acoustic modes in the respective diaphragms.
Transversely-excited film bulk acoustic resonator
Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal lithium niobate (LN) plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the LN plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the LN plate such that interleaved fingers of the IDT are disposed on the diaphragm. A half-lambda dielectric layer is formed on one of the front surface and back surface of the diaphragm. Euler angles of the LN plate are [0, , 0], where 2025.
FILTERS USING TRANSVERSLY-EXCITED FILM BULK ACOUSTIC RESONATORS WITH FREQUENCY-SETTING DIELECTRIC LAYERS
A filter device is provided that includes a substrate; a piezoelectric layer coupled to the substrate either directly or via one or more intermediate layers; a first interdigital transducer (IDT) of a first bulk acoustic resonator device on the piezoelectric layer and having interleaved fingers over a first cavity the first bulk acoustic resonator device; a second IDT of a second bulk acoustic resonator device on the piezoelectric layer and having interleaved fingers over a second cavity of the second bulk acoustic resonator device; a first dielectric layer having a first thickness disposed between the interleaved fingers of the first IDT; and a second dielectric layer having a second thickness disposed between the interleaved fingers of the second IDT. The first thickness is greater than the second thickness.
Rotation in XY plane to suppress spurious modes in XBAR devices
Acoustic resonator devices, filter devices, and methods of fabrication are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. The interleaved fingers extend at an oblique angle to an Z crystalline axis of the piezoelectric plate.
Transversely-excited film bulk acoustic resonator with periodic etched holes
There are disclosed acoustic resonators and method of fabricating acoustic resonators. An acoustic resonator includes a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to a surface of a substrate except for portions of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern on the front surface includes an interdigital transducer (IDT) with interleaved fingers of the IDT disposed on the diaphragm. A periodic array of holes is provided in the diaphragm.
Filter using transversely-excited film bulk acoustic resonators with multiple frequency setting layers
Acoustic filters are disclosed. A filter device includes a plurality of resonators connected in a ladder filter circuit, each resonator of the plurality of resonators comprising an interdigital transducer (IDT) with interleaved fingers disposed on a respective piezoelectric diaphragm. A first frequency setting dielectric layer having a first thickness is disposed over the interleaved fingers of one or more IDTs of a first subset of the plurality of resonators. A second frequency setting dielectric layer having a second thickness greater than the first thickness is disposed over the interleaved fingers of one or more IDTs of a second subset of the plurality of resonators, wherein the first subset and the second subset are not identical.
Transversely-excited film bulk acoustic resonator with recessed rotated-Y-X cut lithium niobate
Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate, a lithium niobate plate having front and back surfaces, wherein Euler angles of the lithium niobate plate are [0, , 0], where is greater than or equal to 0 and less than or equal to 60. An interdigital transducer (IDT) is formed on the piezoelectric plate.