A vibrator device includes a semiconductor substrate, a vibrator element, a circuit element, a wiring, a processing circuit, and a through electrode. The semiconductor substrate has a first surface and an opposite-side second surface of the semiconductor substrate from the first surface. The vibrator element is provided at the first surface. The circuit element is provided at the first surface and includes an oscillation circuit. The wiring is provided at the first surface and electrically couples the vibrator element and the oscillation circuit. The processing circuit is provided at the second surface and processes an output signal of the oscillation circuit. The through electrode penetrates the semiconductor substrate and electrically couples the oscillation circuit and the processing circuit.

Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components

The present disclosure provides a semiconductor package structure. The semiconductor package structure includes a substrate, a first electronic component and a support component. The first electronic component is disposed on the substrate. The first electronic component has a backside surface facing a first surface of the substrate. The support component is disposed between the backside surface of the first electronic component and the first surface of the substrate. The backside surface of the first electronic component has a first portion connected to the support component and a second portion exposed from the support component.

An acoustic resonator includes: a resonating unit including a piezoelectric layer, a first electrode disposed on a lower side of the piezoelectric layer, and a second electrode disposed on an upper side of the piezoelectric layer; a substrate disposed below the resonating unit; a support unit forming a cavity between the substrate and the resonating unit; and a pillar extending through the cavity and connecting the resonating unit to the substrate. The resonating unit further includes a first insertion layer disposed above the pillar.

An acoustic resonator device is formed that reduces a thermal coefficient of expansion mismatch between a piezoelectric plate and a silicon substrate by bonding the front surface of the silicon substrate having a filled and planarized sacrificial tub to a piezoelectric substrate and thinning the silicon substrate by removing material from a back surface. That back surface is then bonded to a handle wafer having a thermal coefficient of expansion (TCE) closer to a TCE of the piezoelectric substrate than a TCE of the silicon substrate and thinning the piezoelectric substrate to a target piezoelectric membrane thickness to form a piezoelectric plate. A conductor pattern is formed on the thinned piezoelectric plate and the sacrificial tub is removed to form a cavity and release a membrane of the piezoelectric plate using an etchant introduced through holes in the piezoelectric plate.

A vibrator device includes a vibration element including a vibration portion and a fixed portion, a supporting member to which the fixed portion is attached to support the vibration element, and a first substrate to which the supporting member is attached, the supporting member includes a attaching portion attached to the first substrate, and A1≥A2 is satisfied in a case where an area of a rectangular region including the fixed portion is A1 and an area of a rectangular region including the attaching portion is A2 in a plan view seen from a thickness direction of the vibration element.

A resonator device includes: a resonator element; a heat generating unit; a first package including a first base at which the resonator element and the heat generating unit are disposed, and a first lid bonded to the first base so as to accommodate the resonator element between the first lid and the first base; and a high emissivity layer that is disposed at a surface of the heat generating unit on a first lid side and that has an emissivity higher than an emissivity of the surface. In addition, a constituent material of the surface is silicon, and the emissivity of the high emissivity layer at room temperature is 0.5 or more.

A resonator device includes: a resonator element; a heat generating unit; a first package including a first base at which the resonator element and the heat generating unit are disposed, and a first lid bonded to the first base so as to accommodate the resonator element between the first lid and the first base; and a low emissivity layer that is disposed at an inner surface of the first lid and that has an emissivity lower than an emissivity of the first lid. In addition, a constituent material of the first lid is silicon, and the emissivity of the low emissivity layer at room temperature is less than 0.5.

A resonator device includes a substrate, a heater provided to the substrate, a temperature sensor provided to the substrate, a resonator element having a bond part bonded to the substrate, and a lid bonded to the substrate so as to house the resonator element in cooperation with the substrate, and the bond part is arranged to overlap the heater in a plan view.

An acoustic resonator package includes a substrate, a cap including a protrusion portion protruding toward the substrate, an acoustic resonator disposed between the substrate and the cap and including a first electrode, a piezoelectric layer, and a second electrode, a metal layer connected to one of the first electrode and the second electrode, and a conductive pad at least partially disposed between the protrusion portion and the metal layer and extending in a first direction different from a second direction in which the acoustic resonator faces the conductive pad.