A BAW device includes a substrate and a piezoelectric element formed on a surface of the substrate. The substrate has a plurality of elastic wave diffusing regions disposed therein for diffusing an elastic wave, the elastic wave diffusing regions being formed by modifying the inside of the substrate with a laser beam.

A bulk acoustic (BAW) resonator having a multilayer base and method of fabricating the bulk acoustic resonator is disclosed. A BAW resonator comprises a substrate having a cavity and including a frame around the cavity, a multilayer base adjacent the cavity and supported by the frame. The multilayer base includes a first layer of crystalline material having a first lattice constant and a second layer of crystalline material having a second lattice constant that is distinct from the first lattice constant. The BAW resonator further includes a stack over the multilayer base. The stack includes a first electrode formed on the multilayer base, a piezoelectric layer having a first side coupled to the first electrode and a second side opposite to the first side of the piezoelectric layer, and a second electrode coupled to the second side of the piezoelectric layer.

Embodiments of an acoustic filter are disclosed. In some embodiments, a bandpass filter is included in a passband signal path, the passband signal path is connected between a first terminal and a second terminal. A first bandstop filter is located in a first stopband signal path, the first stopband signal path connected at the first terminal. Additionally, a second bandstop filter is located in a second stopband signal path, the second stopband signal path is connected at the second terminal.

A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.

Gradient raised frames in film bulk acoustic resonators. In some embodiments, a film bulk acoustic resonator device can include a substrate, first and second metal layers implemented over the substrate, a piezoelectric layer between the first and second metal layers, and a gradient raised frame implemented relative to one of the first and second metal layers and configured to improve reflection of lateral mode waves and to reduce conversion of main mode waves into lateral mode waves.

A laterally excited bulk acoustic wave device is disclosed. The laterally excited bulk acoustic wave device can include a support substrate, a solid acoustic mirror on the support substrate, a piezoelectric layer on the solid acoustic mirror, and an interdigital transducer electrode on the piezoelectric layer. The interdigital transducer electrode is arranged to laterally excite a bulk acoustic wave.

An acoustic resonator includes: a substrate; a resonant region including a first electrode, a piezoelectric layer, and a second electrode disposed on the substrate, and a reflective layer disposed along a periphery of the resonant region; and a connection electrode extending from the second electrode. The reflective layer includes a second section disposed between the resonant region and the connection electrode, and a first section, and a cross-sectional area of the first section is different than a cross-sectional area of the second section.

Methods of designing a BAW resonator having fractal geometry and the resulting devices are provided. Embodiments include providing a fractal generator function; providing three or more line segments; applying the fractal generator function to each of the three or more line segments to form three or more respective fractal line segments, each of the three or more fractal line segments having a respective start point and endpoint and at least four sub-segments; and connecting an endpoint of each one of the three or more fractal line segments to a successive start point of another of the three or more fractal line segments to form a closed-loop contour line representative of an area of an electrode of a BAW resonator, the closed-loop contour line having a fractal dimension that is greater than one and less than two.

An encapsulated integrated circuit is provided that includes an integrated circuit (IC) die. A phonon device is fabricated on the IC die that is configured to emit or to receive phonons that have a range of ultrasonic frequencies. An encapsulation material encapsulates the IC die. A phononic bandgap structure is included within the encapsulation material that is configured to have a phononic bandgap with a frequency range that includes at least a portion of the range of ultrasonic frequencies. A phononic channel is located in the phononic bandgap structure between the phonon device and a surface of the encapsulated IC.

Embodiments of the disclosure are directed to a Bulk Acoustic Wave (BAW) filter structure with internal electrostatic shielding. In exemplary aspects disclosed herein, a shielded BAW filter structure includes a substrate, a plurality of transducers over the substrate, and a planar electrostatic shield between the substrate and a top electrode of the plurality of transducers. Each of the plurality of transducers forms a portion of a BAW resonator and resides in a filter including a parasitic capacitance. The planar electrostatic shield is coupled to a ground node and interrupts an electrical field associated with the parasitic capacitance of the filter to reduce the parasitic capacitance. Accordingly, the shielded BAW filter structure reduces the influence of parasitic capacitance providing improved filtering performance compared to an unshielded BAW filter structure.