An acoustic resonator device includes a substrate and a piezoelectric plate. A first portion of the piezoelectric plate is on the substrate. A second portion of the piezoelectric forms a diaphragm suspended over a cavity in the substrate. An interdigital transducer (IDT) is on a surface of the piezoelectric plate, the IDT including first and second busbars on the first portion and interleaved IDT fingers on the diaphragm. A plurality of tethers support the diaphragm over the cavity, each tether providing an electrical connection between a corresponding one of the interleaved IDT fingers and one of the first and second busbars.

A vibration element includes a substrate having first and second principal surfaces, a first excitation electrode on the first principal surface, a second excitation electrode on the second principal surface, and a first extraction electrode on the first principal surface, and connected to the first excitation electrode. The first extraction electrode includes a first electrode section, and a second electrode section extending from the first electrode section in a first direction and connected to the first excitation electrode. The second electrode section is narrower in a second direction than the first electrode section. When an area of the first excitation electrode is S1, and an area of an overlapping part where the second electrode section overlaps the second excitation electrode is S2, (S2/S1)≦0.1.

Packaged integrated circuit devices include an oscillator circuit having a resonator (e.g., quartz crystal, MEMs, etc.) associated therewith, which is configured to generate a periodic reference signal. A built-in self-test (BIST) circuit is provided, which is selectively electrically coupled to first and second terminals of the resonator during an operation by the BIST circuit to test at least one performance characteristic of the resonator, such as at least one failure mode. These test operations may occur during a built-in self-test time interval when the oscillator circuit is at least partially disabled. In this manner, built-in self-test circuitry may be utilized to provide an efficient means of testing a resonating element/structure using circuitry that is integrated within an oscillator chip and within a wafer-level chip-scale package (WLCSP) containing the resonator.

A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer. The resonator structure is suspended in a cavity in a cap structure.

An acoustic resonator has a piezoelectric plate attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) formed on the plate has interleaved fingers on the diaphragm with first parallel fingers extending from a first busbar and second parallel fingers extending from a second busbar of the IDT. The first and second busbars of the IDT terminate in beveled corners that extend off of the diaphragm as side edges of the busbars that form angles with a perimeter of the cavity.

A piezoelectric element includes a second electrode layer on a second surface of a single-crystal piezoelectric layer. A hole continuous with a through-hole is provided in the second electrode layer. The second electrode layer is made of Pt, Ti, Al, Cu, Au, Ag, Mg, or an alloy including at least one of the metals as a main ingredient. A third electrode layer is on one side of the second electrode layer opposite to the single-crystal piezoelectric layer. The third electrode layer includes at least a portion outside of an edge of the hole with a distance maintained relative to the edge of the hole when viewed in a direction perpendicular or substantially perpendicular to the second surface. The third electrode layer is made of Ni or an alloy including Ni as a main ingredient.

Disclosed are a patterned substrate, a semiconductor device and a nanotube structure. The patterned substrate includes, in a vertical direction, a base plate and an AlN layer that are sequentially stacked. The patterned substrate includes, in the vertical direction, a first surface and a second surface that are oppositely arranged, a bottom surface of the base plate is the first surface of the patterned substrate, the second surface of the patterned substrate is a patterned surface, the second surface is provided with a plurality of grooves that are independent of each other in a horizontal direction and are arranged in an array, and at least part of the base plate is left below each of the plurality of grooves. According to the patterned substrate in the present application, a structure of the AlN layer is changed, so that an epitaxial structure grown subsequently is prevented from warping.

A crystal device includes a rectangular shaped substrate, a mounting frame which is along an outer circumferential edge of a lower surface of the substrate on its short-side sides and configures a recessed part, electrode pads on an upper surface of the substrate, connection pads on the lower surface of the substrate in the mounting frame, a crystal element mounted on the electrode pads, a temperature sensing element mounted on the connection pads, and a lid air-tightly sealing the crystal element. The electrode pads and the recessed part do not overlap in a plane perspective view.

Aspects of this disclosure relate to bulk acoustic wave components. A bulk acoustic wave component can include a substrate, at least one bulk acoustic wave resonator on the substrate, and a cap enclosing the at least one bulk acoustic wave resonator. The cap can include a sidewall spaced apart from an edge of the substrate. The sidewall can be 5 microns or less from the edge of the substrate.

In a crystal oscillator, a crystal resonator plate is bonded to, via laminated bonding patterns, a first sealing member covering a first excitation electrode of the crystal resonator plate; and a second sealing member covering a second excitation electrode of the crystal resonator plate. An internal space is formed, which hermetically seals a vibrating part including the first and second excitation electrodes of the crystal resonator plate. The laminated bonding patterns include a laminated sealing pattern annularly formed to surround the vibrating part in plan view so as to hermetically seal the internal space, and a laminated conductive pattern establishing conduction between wiring and electrodes. The laminated conductive pattern is disposed within a closed space surrounded by the laminated sealing pattern. To the laminated sealing pattern, GND potential is applied when the crystal oscillator operates.