A vibrator device includes a base, a vibrator element attached to the base, and a lid housing the vibrator element between the base and itself and bonded to the base. The base has a semiconductor substrate including a first surface bonded to the lid and a second surface in a front-back relationship with the first surface, a first insulating layer placed on the first surface, first, second internal terminals placed on the first insulating layer and electrically coupled to the vibrator element, a second insulating layer placed on the second surface, and first, second external terminals placed on the second insulating layer and electrically coupled to the first, second internal terminals. The second insulating layer has a first external terminal region in which the first external terminal is placed and a second external terminal region separated from the first external terminal region, in which the second external terminal is placed.

A strain compensated heterostructure comprising a substrate comprising silicon carbide material; a first epitaxial layer comprising single-crystal aluminum nitride material formed on a top surface of the substrate; a second epitaxial layer formed on the first epitaxial layer opposite the top surface of the substrate, the second epitaxial layer comprising single-crystal scandium aluminum nitride material; and a third epitaxial layer formed on the second epitaxial layer opposite the first epitaxial layer, the third layer comprising single-crystal aluminum nitride material.

A vibration device includes a base having a first surface and a second surface that is in a front-back relationship with the first surface, a vibrator disposed at the first surface, and a lid having a first recess that opens toward the first surface, a third surface that is the bottom surface of the first recess, and a fourth surface that is in a front-back relationship with the third surface, the lid being so bonded to the first surface that the vibrator is encapsulated in the first recess, and the lid has a second recess that is part of the third surface recessed toward the fourth surface and includes a diaphragm formed of the bottom surface of second recess and the fourth surface.

A vibrator device includes a base; and a vibrator element including a quartz crystal vibrator element attached to the base via a first metal bump, in which the first metal bump is disposed on a straight line inclined within a range of +55° to +65° or −65° to −55° with respect to an X axis of the quartz crystal constituting the quartz crystal vibrator element in plan view seen from a direction in which the base and the quartz crystal vibrator element are arranged.

A quartz crystal resonator unit that includes a quartz crystal resonator, a lid member and a base member defining an internal space that accommodates the quartz crystal resonator, and a sealing frame and a joining material joining the lid member and the base member to each other. In a plan view of a principal surface of the base member, the sealing frame and the joining material have a frame shape surrounding the quartz crystal resonator, and the frame shape has a uniform width.

An acoustic resonator device includes a substrate and a piezoelectric plate. A first portion of the piezoelectric plate is attached to the substrate. A second portion of the piezoelectric forms a diaphragm suspended over a cavity in the substrate. An interdigital transducer (IDT) is formed on a surface of the piezoelectric plate, the IDT including first and second busbars disposed on the first portion and interleaved IDT fingers disposed on the diaphragm. A plurality of tethers support the diaphragm over the cavity, each tether providing an electrical connection between a corresponding one of the interleaved IDT fingers and one of the first and second busbars.

An acoustic resonator device includes a substrate and a piezoelectric plate. A first portion of the piezoelectric plate is attached to the substrate. A second portion of the piezoelectric forms a diaphragm suspended over a cavity in the substrate. An interdigital transducer (IDT) is formed on a surface of the piezoelectric plate, the IDT including first and second busbars disposed on the first portion and interleaved IDT fingers disposed on the diaphragm. A plurality of tethers support the diaphragm over the cavity, each tether providing an electrical connection between a corresponding one of the interleaved IDT fingers and one of the first and second busbars.

An acoustic resonator device includes a substrate and a piezoelectric plate. A first portion of the piezoelectric plate is on the substrate. A second portion of the piezoelectric forms a diaphragm suspended over a cavity in the substrate. An interdigital transducer (IDT) is on a surface of the piezoelectric plate, the IDT including first and second busbars on the first portion and interleaved IDT fingers on the diaphragm. A plurality of tethers support the diaphragm over the cavity, each tether providing an electrical connection between a corresponding one of the interleaved IDT fingers and one of the first and second busbars.

In examples, a device comprises a semiconductor die, a thin-film layer, and an air cavity positioned between the semiconductor die and the thin-film layer. The air cavity comprises a resonator positioned on the semiconductor die. A rib couples to a surface of the thin-film layer opposite the air cavity.

In examples, a device comprises a semiconductor die, a thin-film layer, and an air cavity positioned between the semiconductor die and the thin-film layer. The air cavity comprises a resonator positioned on the semiconductor die. A rib couples to a surface of the thin-film layer opposite the air cavity.