A method for generating high order harmonic frequencies includes: providing a piezoelectric resonant film; and inputting a driving signal with a single tone frequency for driving the piezoelectric resonant film to oscillate in a non-linear region so as to generate a plurality of high order harmonic frequencies. Therefore, the quantity of the high order harmonic frequencies can be adjusted by applying an electrical controlling method.

An elastic wave device includes a substrate, a multilayer film located on the substrate, a piezoelectric layer located on the multilayer film, resonators located on the piezoelectric layer and including an IDT electrode, and a protective film located on the resonators. The resonators include a first resonator and a second resonator having a higher resonant frequency than the first resonator. A thickness of the protective film on the first resonator is larger than the thickness of the protective film on the second resonator.

An acoustic wave filter includes: a series-arm resonator disposed on a path that connects input/output terminals; and a parallel-arm circuit connected to a node on the path and a ground. The parallel-arm circuit includes a parallel-arm resonator and a capacitor connected in parallel to each other. The capacitor includes a comb-shaped electrode that includes electrode fingers. A frequency at which impedance of the capacitor has a local maximum value is located outside a passband of the acoustic wave filter. The comb-shaped electrode has at least two different electrode finger pitches or at least two different electrode finger duty ratios.

A laterally vibrating bulk acoustic wave (LVBAW) resonator includes a piezoelectric plate sandwiched between first and second metal layers. The second metal layer is patterned into an interdigital transducer (IDT) with comb-shaped electrodes having interlocking fingers. The width and pitch of the fingers of the electrodes determine the resonant frequency. A combined thickness of the first and second metal layers and the piezoelectric layer is less than the pitch of the interlocking fingers.

An acoustic resonator includes a piezoelectric stack including a piezoelectric layer having a top surface and a bottom surface, a top electrode layer disposed above the top surface, and a bottom electrode layer disposed below the bottom surface. A number of acoustic wave reflectors are disposed on a side of the bottom electrode layer opposite the piezoelectric layer. Each acoustic wave reflector includes a high acoustic impedance layer and may include a low acoustic impedance layer. The acoustic resonator may include a tether that extends laterally to a stacking direction of the layers of the piezoelectric stack. A supporting structure may be coupled to the tether opposite the acoustic resonator for anchoring the acoustic resonator. A mirror, one or more phononic crystals, or both may be positioned on proximate the tether opposite the acoustic resonator to avoid resonant waves from exiting the acoustic resonator in use.

The disclosure describes techniques to damp the proof mass motion of an accelerometer while achieving an underdamped resonator. In an example of an in-plane micro-electromechanical systems (MEMS) VBA, the proof mass may contain one or more damping combs that include one or more banks of rotor comb fingers attached to the proof mass. The rotor comb fingers may be interdigitated with stator comb fingers that are attached to fixed geometry. These damping comb fingers may provide air damping for the proof mass when the MEMS die is placed into a package containing a pressure above a vacuum. The geometry of the damping combs with a reduced air gap and large overlap area between the rotor comb fingers and stator comb fingers. The geometry of resonator of the VBA of this disclosure may be configured to avoid air damping.

A method of making an acoustic wave sensor includes the steps of providing a piezoelectric substrate layer and printing on the substrate layer a sensor layer comprising a first interdigitated acoustic wave transducer, a sensing film, and positioned on an opposing side of the sensing film from the first interdigitated acoustic wave transducer at least one selected from the group consisting of a second interdigitated acoustic wave transducer and a Bragg reflector. An insulation layer can be printed. An antenna can be printed in an antenna layer, and the insulation layer can be interposed between the antenna layer and the sensor layer. An electrical connection can be printed between the antenna and the first interdigitated acoustic wave transducer. An acoustic wave sensor is also disclosed.

The disclosure describes techniques to adjust the geometry of a pendulous proof mass VBA to operate with sufficient signal-to-noise performance while avoiding nonlinear mechanical coupling at specified frequencies. The techniques of this disclosure include adding anchor support flexures to a resonator connection structure, adjusting shape, thickness, and the material of VBA components and of the VBA support structure to both control the frequency of any mechanical resonant modes and to adjust the mechanical mode frequencies away from desired operating frequencies and, in some examples, away from harmonics of desired operating frequencies.

A micro-electrical-mechanical system (MEMS) guided wave device includes a single crystal piezoelectric layer and at least one guided wave confinement structure configured to confine a laterally excited wave in the single crystal piezoelectric layer. A bonded interface is provided between the single crystal piezoelectric layer and at least one underlying layer. A multi-frequency device includes first and second groups of electrodes arranged on or in different thickness regions of a single crystal piezoelectric layer, with at least one guided wave confinement structure. Segments of a segmented piezoelectric layer and a segmented layer of electrodes are substantially registered in a device including at least one guided wave confinement structure.

An acoustic resonator includes a piezoelectric stack including a piezoelectric layer having a top surface and a bottom surface, a top electrode layer disposed above the top surface, and a bottom electrode layer disposed below the bottom surface. A number of acoustic wave reflectors are disposed on a side of the bottom electrode layer opposite the piezoelectric layer. Each acoustic wave reflector includes a high acoustic impedance layer and may include a low acoustic impedance layer. The acoustic resonator may include a tether that extends laterally to a stacking direction of the layers of the piezoelectric stack. A supporting structure may be coupled to the tether opposite the acoustic resonator for anchoring the acoustic resonator. A mirror, one or more phononic crystals, or both may be positioned on proximate the tether opposite the acoustic resonator to avoid resonant waves from exiting the acoustic resonator in use.