Patent classifications
H03H2009/0244
Resonator and resonator array
The present disclosure provides a resonator which resonates in a bulk acoustic wave mode. The resonator includes a resonator body, at least one transducer arm and a substrate. The resonator body is deformed at least along a first direction. The transducer arm is connected to the resonator body along the first direction and includes a base, a piezoelectric layer and an electrode layer. The base includes a first end connected to the resonator body. The piezoelectric layer is disposed above the base but not extended to the resonator body, and the electrode layer is disposed above the piezoelectric layer but not extended to the resonator body. The substrate is for securing the transducer arm such that the resonator body is suspended.
Microelectromechanical resonator with improved electrical features
A MEMS resonator is equipped with a substrate, a moving structure suspended above the substrate in a horizontal plane formed by first and second axes, having first and second arms, parallel to one another and extending along the second axis, coupled at their respective ends by first and second transverse joining elements, forming an internal window. A first electrode structure is positioned outside the window and capacitively coupled to the moving structure. A second electrode structure is positioned inside the window. One of the first and second electrode structures causes an oscillatory movement of the flexing arms in opposite directions along the first horizontal axis at a resonance frequency, and the other electrode structure has a function of detecting the oscillation. A suspension structure has a suspension arm in the window. An attachment arrangement is coupled to the suspension element centrally in the window, near the second electrode structure.
MICROMECHANICAL VIBRASOLATOR
A micromechanical vibrasolator isolates vibration of a micromechanical resonator and includes: phononic bandgap mirrors, monophones connected serially; phonophore arms in an alternating sequence of phonophore arm-monophone-phonophore arm; abutments in acoustic communication with the phononic bandgap mirrors; wherein the micromechanical resonator is interposed between the phononic bandgap mirrors with phononic bandgap mirror arranged in parallel on opposing sides of the micromechanical resonator arranged perpendicular to a direction of vibration of an in-plane vibrational mode of the micromechanical resonator.
MICROMECHANICAL RESONATOR HAVING REDUCED SIZE
A micromechanical resonator is provided that enables a smaller total package size with an acceptable quality factor for timing applications. The MEMS resonator includes a vibration portion with a base and three or more vibrating beams extending therefrom. Moreover, the MEMS resonator includes a frame that surrounds a periphery of the vibration portion and a pair of anchor between the vibrating beams for stabilizing the vibration portion within the frame. Furthermore, support beams couple the base of the vibration portion to the pair of anchors.
RESONATOR AND RESONATOR ARRAY
The present disclosure provides a resonator which resonates in a bulk acoustic wave mode. The resonator includes a resonator body, at least one transducer arm and a substrate. The resonator body is deformed at least along a first direction. The transducer arm is connected to the resonator body along the first direction and includes a base, a piezoelectric layer and an electrode layer. The base includes a first end connected to the resonator body. The piezoelectric layer is disposed above the base but not extended to the resonator body, and the electrode layer is disposed above the piezoelectric layer but not extended to the resonator body. The substrate is for securing the transducer arm such that the resonator body is suspended.
DUAL PROOF-MASS RESONATORS WITH LOW SUPPORT LOSS
Mechanical resonator includes two identical proof-masses, at least one connecting beam connecting the two identical proof-masses adapted to oscillate in a same phase in a direction perpendicular to a direction of a connecting beam, and at least one anchor attached to a middle of the at least one connecting beam. Two identical proof-masses are resonant plates, and the at least anchor is anchored to a substrate. The at least anchor may comprise two anchors attached to a middle of the at least one connecting beam in opposite directions. Also, the at least one connecting beam comprises an outer ring at a middle thereof, and the at least anchor is disposed at a center of the outer ring and is connected to the outer ring via two sub-connecting beams. The outer ring may be in a rectangular ring shape. Alternatively, the outer ring may be in a circular ring shape.
SINGLE ANCHOR RESONATORS
A mechanical resonator includes two identical plates, and a decoupling structure comprising at least two first connectors, each first connector connecting the decoupling structure to a respective one of the two identical plates, and an anchor disposed at a center of the decoupling structure. Each of the two identical plates may be a square plate adapted to resonate in Lam?-mode. Further, each of the two identical plates may comprise a plurality of square plates, each square plate disposed next to one another. The decoupling structure further comprises a first ring connected to each of the two identical plates via a respective one of the at least two first connectors. The decoupling structure may further comprise a second ring connected to an inside of the first ring via at least two second connectors, wherein the anchor is disposed at a center of the second ring.
MICROELECTROMECHANICAL SYSTEM RESONATOR DEVICES AND OSCILLATOR CONTROL CIRCUITS
Reference oscillators are ubiquitous in timing applications generally, and in modern wireless communication devices particularly. Microelectromechanical system (MEMS) resonators are of particular interest due to their small size and potential for integration with other MEMS devices and electrical circuits on the same chip. In order to support their use in high volume low cost applications it would be beneficial for MEMS designers to have MEMS resonator designs and manufacturing processes that whilst employing low cost low resolution semiconductor processing yield improved resonator performance thereby reducing the requirements of the oscillator circuitry. It would be further beneficial for the oscillator circuitry to be able to leverage the improved noise performance of differential TIAs without sacrificing power consumption.
Vibration device
A vibration device that includes a vibration portion, a support portion connected to the vibration portion, a bending-vibrating portion connected to the support portion, and a frame-shaped base portion connected to the bending-vibration portion and disposed so as to surround the vibration portion. The base portion defines a slit that extends in a first direction crossing a second direction in which the support portion extends from the vibration portion, the slit defining first and second fixed ends of the bending-vibrating portion and which are continuous with the base portion. A length between a portion of the bending-vibrating portion connected to the support portion to one of the first and second fixed ends of the bending-vibrating portion is in a range of /8 to 3/8, where denotes a wavelength of a bending vibration corresponding to a frequency of a characteristic vibration of the vibration portion.
Resonator and Method of Forming the Same
Various embodiments may relate to a resonator. The resonator may include a support including a substrate portion, and a membrane portion extending from the substrate portion over a cavity. The resonator may also include a piezoelectric layer on the membrane portion. The resonator may further include an electrode on the piezoelectric layer. The substrate portion may include dopants of a first conductivity type. The membrane portion may include dopants of a second conductivity type different from the first conductivity type. A ratio of a thickness of the membrane portion to a combined thickness of the electrode and the piezoelectric layer may be above 3:1 for temperature compensation.