A method of making a temperature-compensated resonator is presented. The method comprises the steps of: (a) providing a substrate including a device layer; (b) replacing material from the device layer with material having an opposite temperature coefficient of elasticity (TCE) along a pre-determined region of high strain energy density for the resonator; (c) depositing a capping layer over the replacement material; and (d) etch-releasing the resonator from the substrate. The resonator may be a part of a micro electromechanical system (MEMS).

A temperature-controlled RF resonator. The resonator includes an insulating thermal enclosure within which are implemented: at least one resonant element configured to deliver an RF output signal when supplied with an RF input signal; at least one heating element configured to supply thermal energy within the thermal enclosure when the at least one heating element is powered by an LF electric power signal; and at least one temperature sensor configured to deliver an LF electric measurement signal as a function of the temperature inside the thermal enclosure. Such an RF resonator has at least one input/output port crossing the insulating thermal enclosure and propagating at least: one signal from among the RF signals; and another signal from among the LF electric signals.

A piezoelectric vibrator is a piezoelectric vibrator including a vibration portion. The vibration portion has an n-type Si layer which is a degenerated semiconductor and which has a resistivity of not less than 0.5 mΩcm and not greater than 1.2 mΩcm and preferably not greater than 0.9 mΩcm.

One or more heating elements are provided to heat a MEMS component (such as a resonator) to a temperature higher than an ambient temperature range in which the MEMS component is intended to operate—in effect, heating the MEMS component and optionally related circuitry to a steady-state “oven” temperature above that which would occur naturally during component operation and thereby avoiding temperature-dependent performance variance/instability (frequency, voltage, propagation delay, etc.). In a number of embodiments, an IC package is implemented with distinct temperature-isolated and temperature-interfaced regions, the former bearing or housing the MEMS component and subject to heating (i.e., to oven temperature) by the one or more heating elements while the latter is provided with (e.g., disposed adjacent) one or more heat dissipation paths to discharge heat generated by transistor circuitry (i.e., expel heat from the integrated circuit package).

A resonator is provided that includes a base, and three or more vibrating arms each including a first and second electrodes and a piezoelectric film disposed therebetween and having a top surface facing the first electrode. The piezoelectric film vibrates in a predetermined vibration mode when a voltage is applied between the first and second electrodes. Moreover, the three or more vibrating arms include two first arms each located on an outermost side in a direction in which the three or more vibrating arms are arranged and that vibrate in a same phase, and one or more second arms disposed between the two first arms. Each first arm is greater in mass than each second arm.

A clock oscillator includes a first resonator, a second resonator, and a frequency synthesis module, where an output frequency of the first resonator is higher than an output frequency of the second resonator, the frequency synthesis module is configured to generate a synthesis frequency based on the output frequency of the first resonator and the output frequency of the second resonator, and the synthesis frequency is used as a clock frequency output by the clock oscillator. The clock oscillator uses both of the two resonators with the different output frequencies as clock signal sources, and generates a synthesized clock signal by using the frequency synthesis module.

A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

A microelectromechanical (MEMS) resonator includes a spring-mass system having a first weight portion (M1), a second weight portion (M2), and a central spring portion (SP) in between the weight portions.

In examples, a device comprises a semiconductor die, a thin-film layer, and an air cavity positioned between the semiconductor die and the thin-film layer. The air cavity comprises a resonator positioned on the semiconductor die. A rib couples to a surface of the thin-film layer opposite the air cavity.

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.