A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

A microelectromechanical device having a mobile structure including mobile arms formed from a composite material and having a fixed structure including fixed arms capacitively coupled to the mobile arms. The composite material includes core regions of insulating material and a silicon coating.

An electrical circuit assembly can include a semiconductor integrated circuit, such as fabricated including CMOS devices. A first lateral-mode resonator can be fabricated upon a surface of the semiconductor integrated circuit, such as including a deposited acoustic energy storage layer including a semiconductor material, a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer, and a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit. The semiconductor integrated circuit can include one or more transistor structures, such as fabricated prior to fabrication of the lateral-mode resonator. Fabrication of the lateral-mode resonator can include low-temperature processing specified to avoid disrupting operational characteristics of the transistor structures.

A MEMS resonator device includes: (i) a support structure, (ii) a resonator element doped with at least one of N-type or P-type dopants, wherein a doping concentration of the at least one of N-type or P-type dopants causes a closely temperature-compensated mode in which (a) an absolute value of a first order temperature coefficient of frequency of the resonator element is reduced to a first value below a threshold value and (b) an absolute value of a second order temperature coefficient of frequency of the resonator element is reduced to about zero, and wherein an anchor decoupler region formed on the resonator element causes the absolute value to be further reduced to a second value, and (iii) at least one anchor coupling the resonator element to the support structure, wherein the anchor decoupler region is formed on the resonator element at least partially surrounding the at least one anchor.

A continuous or distributed resonator geometry is defined such that the fabrication process used to form a spring mechanism also forms an effective mass of the resonator structure. Proportional design of the spring mechanism and/or mass element geometries in relation to the fabrication process allows for compensation of process-tolerance-induced fabrication variances. As a result, a resonator having increased frequency accuracy is achieved.

A continuous or distributed resonator geometry is defined such that the fabrication process used to form a spring mechanism also forms an effective mass of the resonator structure. Proportional design of the spring mechanism and/or mass element geometries in relation to the fabrication process allows for compensation of process-tolerance-induced fabrication variances. As a result, a resonator having increased frequency accuracy is achieved.

A MEMS resonator array is provided with improved electrical characteristics and reduced motional impedance at high frequency applications. The MEMS resonator array includes a pair of first piezoelectric resonators that are opposed to each other with a space defined therebetween. Moreover, the MEMS resonator array includes a pair of second piezoelectric resonators that are opposed to each other and that are each coupled to respective corners of each of the first piezoelectric resonators. As such, each of the second piezoelectric resonators is partially disposed in the space defined between the pair of first piezoelectric resonators.

A microelectromechanical system (MEMS) resonator includes a resonant semiconductor structure, drive electrode, sense electrode and electrically conductive shielding structure. The first drive electrode generates a time-varying electrostatic force that causes the resonant semiconductor structure to resonate mechanically, and the first sense electrode generates a timing signal in response to the mechanical resonance of the resonant semiconductor structure. The electrically conductive shielding structure is disposed between the first drive electrode and the first sense electrode to shield the first sense electrode from electric field lines emanating from the first drive electrode.

A semiconductor device includes a silicon substrate layer with a decoupling region. The decoupling region of the silicon substrate layer comprises an array of lamellas laterally spaced apart from each other by cavities. Each lamella of the array of lamellas comprises at least 20% silicon dioxide.

A continuous or distributed resonator geometry is defined such that the fabrication process used to form a spring mechanism also forms an effective mass of the resonator structure. Proportional design of the spring mechanism and/or mass element geometries in relation to the fabrication process allows for compensation of process-tolerance-induced fabrication variances. As a result, a resonator having increased frequency accuracy is achieved.