A superconducting device that mixes surface acoustic waves and techniques for fabricating the same are provided. A superconducting device can comprise a first surface acoustic wave resonator comprising a first low-loss piezo-electric dielectric substrate. The superconducting device can also comprise a second surface acoustic wave resonator comprising a second low-loss piezo-electric dielectric substrate. Further, the superconducting device can comprise a Josephson ring modulator coupled to the first surface acoustic wave resonator and the second surface acoustic wave resonator. The Josephson ring modulator is a dispersive nonlinear three-wave mixing element.

Surface acoustic wave device having mass-loaded electrode. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength can include a quartz substrate and a piezoelectric plate formed from LiTaO.sub.3 or LiNbO.sub.3 disposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density p in a range 1.50 g/cm.sup.3<6.00 g/cm.sup.3, 6.00 g/cm.sup.3<12.0 g/cm.sup.3, or 12.0 g/cm.sup.3<23.0 g/cm.sup.3, and a thickness greater than 0.148, greater than 0.079, or greater than 0.036, respectively.

The present disclosure provides a high frequency surface acoustic wave resonator and a method for making the same. The high frequency surface acoustic wave resonator includes: a high wave velocity supporting substrate, a piezoelectric film disposed on a top surface of the high wave velocity supporting substrate, and a top electrode disposed on a top surface of the piezoelectric film; a velocity of a body wave propagating in the high wave velocity supporting substrate is greater than a velocity of a target elastic wave propagating in the piezoelectric film. The conductivity of the high wave velocity supporting substrate is greater than 1E3 .Math.cm. The high frequency surface acoustic wave resonator and the method for making the same of the present disclosure solve the problem that the operating frequency of the traditional surface acoustic wave resonator is low.

The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.

A family of composite resonator devices having improved performance properties for use in electronic circuits. Each composite device includes two or more resonator electrodes on a single crystal or other resonant material. The two resonators may be connected in series or parallel, based on application requirements. The two resonators have different surface areas or some other type of asymmetry, causing the response of the composite device to have suppressed spurious modes, reduced insertion loss, or both. This is accomplished by designing the electrodes to have different frequency response curves, where the responses can be tuned and combined to reduce undesirable modes. Improvements in acceleration sensitivity and temperature sensitivity are also achieved. Both physically-applied and projected electrode types are disclosed, along with several crystal shapes. The family of composite resonator devices includes both passive and active devices, such as resonators, filters and oscillators.

A method of manufacturing surface acoustic wave device chips includes grinding a reverse side of a wafer with a surface acoustic wave device formed in each area demarcated by a plurality of crossing projected dicing lines on a face side of the wafer; before or after grinding, applying a laser beam to the reverse side of the wafer such that the laser beam is focused at a position within the wafer, the position being closer to the face side of the wafer than a position corresponding to a reverse side of each of the surface acoustic wave device chips to be produced from the wafer, thereby forming a modified layer for diffusing an acoustic wave; and after grinding and applying the laser beam, dividing the wafer along the projected dicing lines into a plurality of the surface acoustic wave device chips.

A circuit device formed from a functional substrate. The circuit device comprises a functional substrate component and printed electronic elements formed on the functional substrate component. The printed electronic elements formed on the functional substrate component interact with the substrate component to perform a function and to modify the functional substrate component. The circuit device typically needs a passive base material that takes no functional part in the device operation except mechanical support.

A vibrator device includes a circuit element, which has a first terminal and is a quadrangle in plan view, a vibrator, which is disposed on an active surface and is a quadrangle in plan view, a base, on which the circuit element is disposed and which has a second terminal, and a wire which connects the first terminal and the second terminal together. In plan view of the circuit element, at least one side of the vibrator is disposed along a direction where the one side intersects each of two adjacent sides of the circuit element, and the vibrator does not overlap the first terminal.

A circuit device formed from a functional substrate. The circuit device comprises a functional substrate component and printed electronic elements formed on the functional substrate component. The printed electronic elements formed on the functional substrate component interact with the substrate component to perform a function and to modify the functional substrate component. The circuit device typically needs a passive base material that takes no functional part in the device operation except mechanical support.

A bonded substrate includes a quartz substrate and a piezoelectric substrate which is bonded on the quartz substrate and on which a surface acoustic wave propagates, wherein the quartz substrate and the piezoelectric substrate are bonded by covalently coupling at a bonding interface, and an orientation of the quartz substrate and an orientation of the piezoelectric substrate intersect with each other on an orthogonal direction side or in the range of 65 degrees to 115 degrees in a bonding surface direction.