Acoustic wave devices and related methods are disclosed. In some embodiments, an acoustic wave device can include a quartz substrate having a first surface, and a piezoelectric plate formed from LiTaO3 or LiNbO3 and having a first surface configured to support a surface acoustic wave and a second surface in engagement with the first surface of the quartz substrate. The second surface of the piezoelectric plate is a minus surface resulting from crystal structure orientation of the piezoelectric plate. The acoustic wave device can further include an interdigital transducer electrode formed on the first surface of the piezoelectric plate and configured to provide transducer functionality associated with the surface acoustic wave.

Methods and assemblies related to fabrication of acoustic wave devices. In some embodiments, a method for fabricating an acoustic wave device can include attaching a first surface of a piezoelectric layer, such as a LiTaO.sub.3 or LiNbO.sub.3 layer, to a handling substrate, and performing a thinning operation on the piezoelectric layer to expose a second surface of a reduced-thickness piezoelectric layer attached to the handling substrate. The method can further include bonding the second surface of the reduced-thickness piezoelectric layer to a first surface of a permanent substrate, and removing the handling substrate from the reduced-thickness piezoelectric layer. The handling substrate can be, for example, a silicon substrate, and the permanent substrate can be, for example, a quartz substrate.

An improved electroacoustic transducer with an improved mode profile is provided. The transducer comprises a transversal velocity profile with a periodic structure and an edge structure flanking the periodic structure. The velocity profile also allows to suppress the SH wave mode. A dielectric material with a periodic structure contributes to the formation of the periodic structure of the velocity profile.

A superconducting device that mixes surface acoustic waves and techniques for fabricating the same are provided. A superconducting device can comprise a first surface acoustic wave resonator comprising a first low-loss piezo-electric dielectric substrate. The superconducting device can also comprise a second surface acoustic wave resonator comprising a second low-loss piezo-electric dielectric substrate. Further, the superconducting device can comprise a Josephson ring modulator coupled to the first surface acoustic wave resonator and the second surface acoustic wave resonator. The Josephson ring modulator is a dispersive nonlinear three-wave mixing element.

A surface acoustic wave (SAW) device includes: a base substrate; a piezo-electric material layer; at least one interdigitated electrode pair disposed on the piezo-electric material layer; and an acoustic wave suppression layer disposed between the piezo-electric material layer and the base substrate, the acoustic wave suppression layer being configured to suppress an acoustic wave propagating in a direction from the piezo-electric material layer to the base substrate.

An acoustic wave device includes a piezoelectric layer, an IDT electrode, a high-acoustic-velocity support substrate, and a low-acoustic-velocity film. The high-acoustic-velocity support substrate is located on an opposite side of the piezoelectric layer from the IDT electrode in the thickness direction of the piezoelectric layer. The low-acoustic-velocity film is disposed between the high-acoustic-velocity support substrate and the piezoelectric layer in the thickness direction. The high-acoustic-velocity support substrate includes a base region and a surface region disposed nearer to the low-acoustic-velocity film than the base region in the thickness direction and whose crystal quality is worse than that of the base region. The surface region includes first and second layers disposed nearer to the base region than the first layer in the thickness direction and whose crystal quality is better than that of the first layer.

Surface acoustic wave devices and related methods. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength can include a quartz substrate and a piezoelectric plate formed from LiTaO.sub.3 or LiNbO.sub.3 disposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density in a range 1.50 g/cm.sup.3<6.00 g/cm.sup.3, 6.00 g/cm.sup.3<12.0 g/cm.sup.3, or 12.0 g/cm.sup.3<23.0 g/cm.sup.3, and a thickness greater than 0.148, greater than 0.079, or greater than 0.036, respectively.

A method and system for recycling signals in a leaky mode device for a holographic display or other application. A leaky mode device comprises at least a first transducer, a substrate, and a second transducer. The first transducer may be configured to receive an input signal from a signal arbiter, which forwards to the first transducer as an input signal either a new input signal or a recycled input signal (or some combination of the two). The first transducer converts the received input signal to a SAW (surface acoustic wave) and transmits the SAW through the substrate to the second transducer, which converts the received SAW to an output signal, and forwards the output signal to an amplifier, which amplifies the output signal (now a recycled signal) and forwards to the signal arbiter. This system facilitates persistence for points in a holographic display without the need for continually rewriting to leaky mode devices.

Embodiments of a Surface Acoustic Wave (SAW) device and methods of fabrication thereof are disclosed. In some embodiments, a SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate, wherein a thickness of the piezoelectric layer is less than twice a transducer electrode period of the at least one interdigitated transducer. Using the piezoelectric layer on the carrier substrate suppresses acoustic radiation into the bulk, thereby improving the performance of the SAW device. Further, by utilizing quartz for the carrier substrate, additional advantages of small viscous losses, small permittivity, and small thermal sensitivity are achieved. Still further, as compared to Silicon, the use of quartz for the carrier substrate eliminates resistive losses.

An acoustic wave device that has a better TCF and can improve a resonator Q or impedance ratio is provided. The acoustic wave device includes a substrate 11 containing 70 mass % or greater of silicon dioxide (SiO.sub.2), a piezoelectric thin film 12 including LiTaO.sub.3 crystal or LiNbO.sub.3 crystal and disposed on the substrate 11, and an interdigital transducer electrode 13 disposed in contact with the piezoelectric thin film 12.