An electro-acoustic transducer and an electro-acoustic component including an electro-acoustic transducer are disclosed. In an embodiment the transducer includes a first and a second bus bar, a plurality of electrode fingers and a plurality of two or more sub tracks, wherein each electrode finger is electrically connected to one of the bus bars, wherein each sub track extends along a longitudinal direction, wherein all sub tracks are arranged one next to another in a transversal direction, wherein at least a first of the sub tracks includes segments of the electrode fingers and has an associated sub track with segments of the electrode fingers, wherein the segments of the electrode fingers of the first sub track are shifted by a distance S=/2 along the longitudinal direction relative to the segments of the electrode fingers of the associated sub track, and wherein is an acoustic wavelength.

Guided Surface Acoustic Wave (SAW) devices with improved quartz orientations are disclosed. A guided SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate. The quartz carrier substrate includes an orientation that provides improved performance parameters for the SAW device, including electromechanical coupling factor, resonator quality factor, temperature coefficient of frequency, and delta temperature coefficient of frequency.

A surface elastic wave device comprises a stack including: a thin film made of a piezoelectric first material; a substrate made from a second material; and exciting means for generating at least one surface acoustic wave propagation mode in the piezoelectric film; wherein: the first material is a single-crystal material and the second material is a crystalline material, the thickness of the thin film of piezoelectric first material being smaller than or equal to 20 m, and the first material and the second material having viscoelastic coefficients lower than or equal to those of quartz for the propagation mode induced by the exciting means.

A method and system for recycling signals in a leaky mode device for a holographic display or other application. A leaky mode device comprises at least a first transducer, a substrate, and a second transducer. The first transducer may be configured to receive an input signal from a signal arbiter, which forwards to the first transducer as an input signal either a new input signal or a recycled input signal (or some combination of the two). The first transducer converts the received input signal to a SAW (surface acoustic wave) and transmits the SAW through the substrate to the second transducer, which converts the received SAW to an output signal, and forwards the output signal to an amplifier, which amplifies the output signal (now a recycled signal) and forwards to the signal arbiter. This system facilitates persistence for points in a holographic display without the need for continually rewriting to leaky mode devices.

An acoustic wave device that has a better TCF and can improve a resonator Q or impedance ratio is provided. The acoustic wave device includes a substrate 11 containing 70 mass % or greater of silicon dioxide (SiO.sub.2), a piezoelectric thin film 12 including LiTaO.sub.3 crystal or LiNbO.sub.3 crystal and disposed on the substrate 11, and an interdigital transducer electrode 13 disposed in contact with the piezoelectric thin film 12.

Aspects of this disclosure relate to a filter for a carrier aggregation system. The filter is configured to pass a first band of a carrier aggregation signal. The filter includes a surface acoustic wave device that includes a quartz substrate, an interdigital transducer electrode, and a lithium-based piezoelectric layer positioned between the quartz substrate and the interdigital transducer electrode. The surface acoustic wave device is configured to suppress a higher order spurious mode corresponding to a second band of the carrier aggregation signal.

Methods and assemblies related to fabrication of acoustic wave devices. In some embodiments, a method for fabricating an acoustic wave device can include attaching a first surface of a piezoelectric layer, such as a LiTaO.sub.3 or LiNbO.sub.3 layer, to a handling substrate, and performing a thinning operation on the piezoelectric layer to expose a second surface of a reduced-thickness piezoelectric layer attached to the handling substrate. The method can further include bonding the second surface of the reduced-thickness piezoelectric layer to a first surface of a permanent substrate, and removing the handling substrate from the reduced-thickness piezoelectric layer. The handling substrate can be, for example, a silicon substrate, and the permanent substrate can be, for example, a quartz substrate.

Surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength ? can include a substrate and a piezoelectric layer implemented over the substrate to have a thickness greater than 2?. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric layer to have mass density and thickness selected to provide a tuned mass-loading property for the thickness of the piezoelectric layer.

Embodiments of a Surface Acoustic Wave (SAW) device and methods of fabrication thereof are disclosed. In some embodiments, a SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate, wherein a thickness of the piezoelectric layer is less than twice a transducer electrode period of the at least one interdigitated transducer. Using the piezoelectric layer on the carrier substrate suppresses acoustic radiation into the bulk, thereby improving the performance of the SAW device. Further, by utilizing quartz for the carrier substrate, additional advantages of small viscous losses, small permittivity, and small thermal sensitivity are achieved. Still further, as compared to Silicon, the use of quartz for the carrier substrate eliminates resistive losses.

Acoustic wave devices and related methods are disclosed. In some embodiments, an acoustic wave device can include a quartz substrate having a first surface, and a piezoelectric plate formed from LiTaO3 or LiNbO3 and having a first surface configured to support a surface acoustic wave and a second surface in engagement with the first surface of the quartz substrate. The second surface of the piezoelectric plate is a minus surface resulting from crystal structure orientation of the piezoelectric plate. The acoustic wave device can further include an interdigital transducer electrode formed on the first surface of the piezoelectric plate and configured to provide transducer functionality associated with the surface acoustic wave.