Embodiments disclosed herein include diagnostic substrates and methods of using such substrates. In an embodiment, a diagnostic substrate comprises a substrate, and a device layer over the substrate. In an embodiment, the diagnostic substrate further comprises a resonator in the device layer. In an embodiment, the resonator comprises a cavity, a cover layer over the cavity, and electrodes within the cavity for driving and sensing resonance of the cover layer. In an embodiment, the diagnostic substrate further comprises a reflector surrounding a perimeter of the resonator.

A surface acoustic wave (SAW) device according to the present invention includes: a substrate; an intermediate layer formed on an upper surface of the substrate; a piezoelectric layer formed on an upper surface of the intermediate layer; and an inter-digital transducer (IDT) electrode formed on an upper surface of the piezoelectric layer to generate a SAW, wherein an upper portion of the substrate is deformed by a predetermined thickness by ion implantation to form an ion trap layer and the intermediate layer is formed on an upper surface of the ion trap layer.

A surface acoustic wave device using a longitudinally polarized guided wave comprises a composite substrate comprising a piezoelectric layer formed over a base substrate, wherein the crystalline orientation of the piezoelectric layer with respect to the base substrate is such that, the phase velocity of the longitudinally polarized wave is below the critical phase velocity of the base substrate at which wave guiding within the piezoelectric layer vanishes. A method of fabrication of such surface acoustic wave device is also disclosed.

A device employing the generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate (e.g., GaAs, GaSb, InAs, or InGaAs). The device includes two SiO.sub.2/ZnO islands, each including a SiO.sub.2 buffer layer deposited on the doped p-type III-V semiconductor substrate and a ZnO layer deposited on the SiO.sub.2 buffer layer. An input interdigital transducers (IDT) and an output IDT are each patterned on one of the SiO.sub.2/ZnO islands. The IDTs generates surface acoustic waves along an exposed surface of the highly doped p-type III-V semiconductor substrate. The surface acoustic waves improve the photoelectric and photovoltaic properties of the device. The device is manufactured using a disclosed technique for propagating strong surface acoustic waves on weak piezoelectric materials. Also disclosed is a photodetector developed using that technique.

An encapsulated integrated circuit is provided that includes an integrated circuit (IC) die. An encapsulation material encapsulates the IC die. A phononic bandgap structure is included within the encapsulation material that is configured to have a phononic bandgap with a frequency range approximately equal to a range of frequencies of thermal phonons produced by the IC die when the IC die is operating.

A guided surface acoustic wave (SAW) device includes a substrate, a piezoelectric layer on the substrate, and a transducer on the piezoelectric layer. The substrate is silicon, and has a crystalline orientation defined by a first Euler angle (), a second Euler angle (), and a third Euler angle (). The first Euler angle (), the second Euler angle (), and the third Euler angle () are chosen such that a velocity of wave propagation within the substrate is less than 5,400 m/s.

A hybrid structure for a surface acoustic wave device comprises a useful layer of piezoelectric material having a free first surface and a second surface disposed on a support substrate that has a lower coefficient of thermal expansion than that of the useful layer. The hybrid structure further comprises a trapping layer disposed between the useful layer and the support substrate, and at least one functional interface of predetermined roughness between the useful layer and the trapping layer.

An electronic component includes a support member, a piezoelectric film, and an interdigital transducer. The support member includes silicon as a primary component. The piezoelectric film is provided directly or indirectly on the support member. The interdigital transducer includes a plurality of electrode fingers. The plurality of electrode fingers are provided side by side separately from each other. The interdigital transducer is provided on the principal surface of the piezoelectric film. The film thickness of the piezoelectric film is about 3.5 or less, where denotes the wavelength of an acoustic wave determined by the electrode finger pitch of the interdigital transducer. In the support member, the high-impurity-concentration region is further from the piezoelectric film than the low-impurity-concentration region.

A multiplexer includes a transmission-side filter electrically connected to a common terminal and a transmission input terminal, and a transmission-side filter electrically connected to the common terminal and a transmission input terminal. The transmission-side filter includes a plurality of series arm resonators and a plurality of parallel arm resonators. Capacitance elements are respectively electrically connected in parallel to the series arm resonator and the parallel arm resonator, which are connected most proximately to the common terminal. IDT electrodes of a series arm resonator and a parallel arm resonator connected most proximately to the common terminal do not include a thinning electrode, and others of the series arm resonators and the parallel arm resonators include thinning electrodes.

An acoustic wave device includes a semiconductor substrate having a first main surface and a second main surface, a piezoelectric thin film provided directly on or indirectly above the first main surface of the semiconductor substrate, and an IDT electrode provided on the piezoelectric thin film. A semiconductor defining the semiconductor substrate is a high acoustic velocity material in which an acoustic velocity of a bulk wave propagating therethrough is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric thin film. The semiconductor substrate includes a first region including the first main surface and a second region which is a region other than the first region and includes the second main surface. An electric resistance of the first region is lower than an electric resistance of the second region.