Methods for making laser-marked packaged surface acoustic wave devices are provided. The method may include directly marking a surface of a piezoelectric substrate, where the opposite surface of the piezoelectric substrate includes a package structure encapsulating a surface acoustic wave device. The method may include exposing the surface of the piezoelectric substrate to light from a deep ultraviolet laser. By using a wavelength readily absorbed by the piezoelectric substrate, a relatively shallow marking may be made in the piezoelectric substrate. The markings may extend less than 1 micrometer into the piezoelectric substrate, and do not affect the structural integrity of the piezoelectric substrate or the operation of the packaged surface acoustic wave device.

A microelectromechanical resonator device is provided having two-dimensional resonant rods. The resonator device has a piezoelectric layer formed with a plurality of alternating rods and trenches. A bottom electrode is in contact with a bottom surface of the piezoelectric layer. A top electrode metal grating of conductive strips is aligned in contact with corresponding rods of the piezoelectric layer.

Packaged surface acoustic wave devices are provided. The packaged surface acoustic wave devices are relatively thin and can have a height of less than 220 micrometers. The packaged surface acoustic wave device includes a photosensitive resin over a conductive structure which may be formed by a plating process. The conductive structure may overlie a cavity-defining structure encapsulating a surface acoustic wave device, the cavity-defining structure including walls and a roof. The photosensitive resin can include a phenol resin. The photosensitive resin can be relatively thin. Edge portions of a piezoelectric substrate can be free from the photosensitive resin.

A surface acoustic wave (SAW) resonator comprises a plurality of interdigital transducer electrodes disposed on a multilayer piezoelectric substrate (MPS) including a layer of piezoelectric material having a lower surface bonded to an upper surface of a layer of a second material different from the piezoelectric material that improves the temperature stability and reliability of the SAW resonator, and a layer of dielectric material disposed on an upper surface of the interdigital transducer electrodes and MPS.

A structure includes a substrate including a wafer or a portion thereof; and a piezoelectric bulk material layer comprising a first portion deposited onto the substrate and a second portion deposited onto the first portion, the second portion comprising an outer surface having a surface roughness (Ra) of 4.5 nm or less. Methods for depositing a piezoelectric bulk material layer include depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.

An elastic wave device includes first and second IDT electrodes provided over a principal surface of a piezoelectric substrate. The first IDT electrode is provided directly on a principal surface of the piezoelectric substrate and the second IDT electrode is provided over the principal surface with a first dielectric layer interposed therebetween. A second dielectric layer extends to upper portions of the first and second IDT electrodes. A wiring electrode passes over the second dielectric layer and extends to the upper portions of the first and second IDT electrodes. Respective angles between first and second side surfaces of the second dielectric layer and the principal surface of the piezoelectric substrate are smaller than an angle between a side surface of the first dielectric layer and the principal surface of the piezoelectric substrate.

A structure includes a substrate including a wafer or a portion thereof; and a piezoelectric bulk material layer comprising a first portion deposited onto the substrate and a second portion deposited onto the first portion, the second portion comprising an outer surface having a surface roughness (Ra) of 4.5 nm or less. Methods for depositing a piezoelectric bulk material layer include depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.

There are disclosed acoustic resonators and method of fabricating acoustic resonators. An acoustic resonator includes a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to a surface of a substrate except for portions of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern on the front surface includes an interdigital transducer (IDT) with interleaved fingers of the IDT disposed on the diaphragm. A periodic array of holes is provided in the diaphragm.

A method of manufacturing a packaged acoustic wave component includes forming or providing a device substrate, forming a metal layer over the device substrate, and forming or providing an acoustic wave device and mounting the acoustic wave device over at least a portion of the metal layer. The method also includes forming or providing a cap substrate, and forming or providing a peripheral wall, attaching one end of the peripheral wall to the device substrate so that the peripheral wall surrounds the acoustic wave device, and attaching the cap substrate to an opposite end of the peripheral wall. The method includes forming one or more vias so that the one or more vias extend through the device substrate and are disposed under the metal layer.

A packaged acoustic wave component has a device substrate and a metal layer disposed over the device substrate. An acoustic wave device is disposed over at least a portion of the metal layer so that the metal layer is interposed between the device substrate and at least a portion of the acoustic wave device. A cap substrate is spaced above the device substrate, and peripheral wall that is attached to and extends between the device substrate and the cap substrate, the peripheral wall surrounding the acoustic wave device. One or more vias extend through the device substrate and are disposed under the metal layer.