A composite substrate includes a supporting substrate composed of quartz, a piezoelectric material substrate, a first amorphous layer present between the supporting substrate and piezoelectric material substrate, and a second amorphous layer present between the supporting substrate and first amorphous layer. The first amorphous layer contains 10 to 30 atom % of silicon atoms, and the second amorphous layer contains 1 to 10 atom % of fluorine atoms.

A composite substrate includes a supporting substrate composed of quartz, a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and an interface layer along a bonding interface between the supporting substrate and the piezoelectric material substrate. The interface layer has amorphous structure and contains constituent components including silicon, oxygen and at least one of tantalum and niobium. The interface layer has concentrations of hydrogen atoms, nitrogen atoms and fluorine atoms of 1×10.sup.18 atoms/cm.sup.3 or higher and 5×10.sup.21 atoms/cm.sup.3 or lower, respectively.

The present disclosure provides an acoustic resonator device, among other things. One example of the disclosed acoustic resonator device includes a substrate having a carrier layer, a first layer disposed over the carrier layer, and a piezoelectric layer disposed over the first layer. The acoustic resonator device is also disclosed to include an interdigitated metal disposed over the piezoelectric layer, where the interdigitated metal is configured to generate acoustic waves within an acoustically active region. The acoustic resonator device is further disclosed to include an acoustic wave scattering structure.

A surface acoustic wave device includes a substrate, a first electrode and a second electrode formed on the substrate to extend along a first direction, wherein the first electrode and the second electrode are alternately disposed along the second direction, one end of the first electrode on one side of the first direction is aligned along the second direction, and one end of the second electrode on the other side of the first direction is aligned along the second direction, a temperature compensation film which covers the first electrode and the second electrode, a first additional film formed on the temperature compensation film to vertically overlap a partial region from the one end of the first electrode on the one side of the first direction, and a second additional film formed on the temperature compensation film to vertically overlap a partial region from the one end of the second electrode.

A layered body includes a ceramic substrate formed of a polycrystalline ceramic and having a supporting main surface and a piezoelectric substrate formed of a piezoelectric material and having a bonding main surface that bonds to the supporting main surface through Van der Waals force. The ceramic substrate includes a supporting main surface amorphous layer formed so as to include the supporting main surface. The piezoelectric substrate includes a bonding main surface amorphous layer formed so as to include the bonding main surface. The supporting main surface amorphous layer has a smaller thickness than the bonding main surface amorphous layer.

The present disclosure provides an acoustic resonator device, among other things. One example of the disclosed acoustic resonator device includes a substrate having a carrier layer, a first layer disposed over the carrier layer, and a piezoelectric layer disposed over the first layer. The acoustic resonator device is also disclosed to include an interdigitated metal disposed over the piezoelectric layer, where the interdigitated metal is configured to generate acoustic waves within an acoustically active region. The acoustic resonator device is further disclosed to include an acoustic wave scattering structure.

Aspects of this disclosure relate to an acoustic wave resonator with hyperbolic mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.

Aspects of this disclosure relate to an acoustic wave resonator with transverse mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.

An electronic component including a pad electrode provided on a wiring electrode and a Au bump provided on the pad electrode, wherein the uppermost layer of the wiring electrode is a first Ti layer, the uppermost layer of the pad electrode is a Au layer, and the thickness of the first Ti layer in at least a portion on which the Au bump is superposed in plan view is greater than the thickness of at least a portion of the first Ti layer in a portion on which the Au bump is not superposed in plan view.

A bonding layer 3 is formed over a piezoelectric material substrate, and the bonding layer is made of one or more materials selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide. A neutralized beam is irradiated onto a surface of the bonding layer and a surface of a supporting body to activate the surface of the bonding layer and the surface of the supporting body. The surface of the bonding layer and the surface of the supporting body are bonded by direct bonding.