An acoustic wave device can have a plurality of coupling portions configured to electrically couple electrodes of the device to the substrate of the device to provide a bypass current pathway through the substrate for heat management. The substrate can be a semiconductor material, which can become more conductive as the temperature increases so that the bypass current pathway diverts more power through the substrate as the temperature increases. The acoustic wave device can be a surface acoustic wave device, which can have an interdigital transducer electrode that has the coupling portions on each of the bus bars and extending through the piezoelectric layer to contact the substrate. The acoustic wave device can be a bulk acoustic wave device in some implementations.

A surface acoustic wave resonator comprises a multi-layer piezoelectric substrate including a carrier substrate, a layer of a first dielectric material disposed on a front side of the carrier substrate, and a layer of piezoelectric material disposed on a front side of the layer of the first dielectric material, the piezoelectric material having a cut angle θ of from about 12 degrees to about 25 degrees to suppress bulk leakage and improve gamma, and interdigital transducer electrodes disposed on a front side of the layer of piezoelectric material.

Aspects of this disclosure relate to an acoustic wave filter that includes acoustic wave resonators arranged to filter a radio frequency signal. The acoustic wave resonators include a first acoustic wave resonator. The acoustic wave filter includes a circuit element in parallel with the first acoustic wave resonator in a stage of the acoustic wave filter. The circuit element and the first acoustic wave resonator have different resonant frequencies. The circuit element can reduce an impact of bulk mode of the first acoustic wave resonator on insertion loss of the acoustic wave filter. The first acoustic wave resonator can be a surface acoustic wave resonator in certain embodiments. The circuit element can be a second acoustic wave resonator or a capacitor, for example.

Aspects of this disclosure relate to an acoustic wave filter that includes acoustic wave resonators arranged to filter a radio frequency signal. The acoustic wave resonators include a first acoustic wave resonator. The acoustic wave filter includes a circuit element in parallel with the first acoustic wave resonator in a stage of the acoustic wave filter. The circuit element and the first acoustic wave resonator have different resonant frequencies. The circuit element can reduce an impact of bulk mode of the first acoustic wave resonator on insertion loss of the acoustic wave filter. The first acoustic wave resonator can be a surface acoustic wave resonator in certain embodiments. The circuit element can be a second acoustic wave resonator or a capacitor, for example.

Aspects of this disclosure relate to an acoustic wave resonator with transverse mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.

A filter device includes a first series line, one or more first parallel lines extending from the first series line, two or more first series IDT electrodes on the first series line, and one or more first parallel IDT electrodes on the one or more first parallel lines. At least one of the two or more first series IDT electrodes is a first-type electrode. A dielectric layer is between the first-type electrode and a substrate. At least one of the two or more first series IDT electrodes except the first-type electrode and the one or more first parallel IDT electrodes is a second-type electrode directly contacting the substrate. A first series IDT electrode of the two or more first series IDT electrodes that has a largest pitch of electrode fingers is the first-type electrode.

An oscillating device includes a first quartz crystal resonator, a driving circuit, a first waveform adjustment circuit, and at least two second quartz crystal resonators. The first quartz crystal resonator has a first resonant frequency. The driving circuit, coupled to the first quartz crystal resonator, drives the first quartz crystal resonator to generate a first oscillating signal having the first resonant frequency. The second quartz crystal resonators, coupled in parallel and coupled to the driving circuit and the first quartz crystal resonator, have a second resonant frequency and receive and rectify the first oscillating signal to generate a second oscillating signal having the second resonant frequency. The first waveform adjustment circuit, coupled to the second quartz crystal resonators, receives the second oscillating signal and adjusts the second oscillating signal to generate a first waveform adjustment signal.

A surface acoustic wave device including a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a polymeric roof layer arranged over the piezoelectric layer and interdigital transducer electrode. The polymeric roof layer is spaced apart from the piezoelectric layer to define a cavity to accommodate the interdigital transducer electrode. The polymeric roof layer is supported along a span of the polymeric roof layer by at least one pillar. The thermal conductivity of the pillar is greater than the thermal conductivity of the polymeric roof layer. Related wafer-level packages, radio frequency modules and wireless communication devices are also provided.

Certain aspects of the present disclosure provide a surface acoustic wave (SAW) device with one or more intermediate layers for reduced self-heating and methods for fabricating such a SAW device. One example SAW device generally includes a piezoelectric layer and an interdigital transducer (IDT) disposed above the piezoelectric layer. The IDT generally includes a first electrode having a first busbar and a first plurality of fingers. The first electrode generally includes a first copper layer disposed above the piezoelectric layer, a first intermediate layer disposed above the first copper layer, the first intermediate layer comprising a different material than the first copper layer, and a second copper layer disposed above the first intermediate layer.

A method of making an electronics package with a multi-layer piezoelectric substrate includes bonding a piezoelectric layer over a substrate. The method also includes applying a polyimide layer over an outer boundary of the piezoelectric layer so that the polyimide layer is interposed between the piezoelectric layer and a metal portion (e.g., of copper (Cu)) to inhibit (e.g., prevent) stresses from the metal layer damaging the piezoelectric layer.