An acoustic wave device utilizes Love waves and includes a piezoelectric substrate (piezoelectric body), an IDT electrode provided on the piezoelectric substrate, and a first dielectric film that is provided on the piezoelectric substrate and covers the IDT electrode. A center region, first and second edge regions, and first and second gap regions are disposed in this order in the IDT electrode. A mass-adding film is provided inside the first dielectric film in the first edge region and the second edge region. When T1 is the film thickness of the portion of the first dielectric film located between the IDT electrode and the mass-adding film and T2 is the film thickness of the portion of the first dielectric film located between the mass-adding film and the surface of the first dielectric film on the opposite side from the piezoelectric substrate, T1/(T1+T2)<about 0.5.

An acoustic wave device includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate. In the IDT electrode, a central region, first and second low acoustic velocity regions and first and second high acoustic velocity regions are disposed in this order. A duty ratio in the first low acoustic velocity region of first electrode fingers and the second low acoustic velocity region of second electrode fingers is larger than a duty ratio in the central region. When acoustic velocity of a transversal bulk wave propagating in metal that is a main component of a main electrode layer is defined as v (m/s), v3299 m/s, and when a wave length defined by an electrode finger pitch of the IDT electrode is defined as , and a film thickness of the main electrode layer normalized by the wave length is defined as T, then T0.00018e.sup.0.002V+0.014.

An elastic wave device includes a piezoelectric substrate including an IDT electrode provided on one main surface. In the elastic wave device, a center region positioned in a central portion in a direction perpendicular to an elastic wave propagation direction, first and second low acoustic velocity regions positioned outside of the center region, and first and second high acoustic velocity regions positioned outside of the first and the second low acoustic velocity regions in plan view are provided. A groove portion overlaps with one of the first electrode finger and the second electrode finger in plan view in a portion located in the first and second low acoustic velocity regions on the main surface. An acoustic velocity adjusting layer is provided in the groove portion.

An elastic wave device includes an IDT electrode and a first dielectric layer provided on a piezoelectric substrate. An intersection region where first electrode fingers and second electrode fingers in the IDT electrode overlap each other as viewed from an elastic wave propagation direction includes a center region, a first edge region located on one side of the center region in a direction in which the first electrode fingers and the second electrode fingers extend, and a second edge region located on the other side of the center region in the direction in which the first electrode fingers and the second electrode fingers extend. A mass addition film laminated on the first dielectric layer includes portions of at least two thicknesses.

A longitudinally coupled resonator acoustic wave filter includes first, second, and third IDT electrodes disposed on a piezoelectric substrate. The first, second, and third IDT electrodes include first electrode fingers and second electrode fingers. The first, second, and third IDT electrodes include narrow-pitch electrode finger portions in which the pitch between electrode fingers is narrower than in the remaining electrode finger portions. In the first, second, and third IDT electrodes, an overlap area includes a central area and first and second edge areas at opposite ends of the central area in the direction in which the first and second electrode fingers extend. In the remaining electrode finger portions the first electrode fingers and the second electrode fingers include wide portions in the first or second edge area.

An acoustic wave device includes a piezoelectric substrate, an interdigital transducer electrode on the piezoelectric substrate, and two reflectors on both sides of the interdigital transducer electrode in an acoustic wave propagation direction. The reflectors include first and second busbars and first to third electrode fingers, respectively, and the first and second busbars are opposed to one another. The first busbars and the second busbars are connected by at least one third electrode finger. The reflectors each include a center area located centrally in a length direction and a first high-acoustic-velocity area that is located between the center area and the first busbars and has an acoustic velocity higher than the acoustic velocity of the center area, where the length direction is a direction in which the first to third electrode fingers extend.

An acoustic wave device includes an IDT electrode provided on a piezoelectric substrate. The IDT electrode includes a crossing area including a central area, and first and second low-acoustic-velocity areas on both sides in a direction perpendicular or substantially perpendicular to an acoustic wave propagating direction. First and second high-acoustic-velocity areas are provided outside the first and second low-acoustic-velocity areas. Mass adding films are laminated in respective portions of first and second electrode fingers, the respective portions being positioned in the first and second low-acoustic-velocity areas. In at least one of the mass adding films, a width of a first end portion and a width of a second end portion are narrower than a width of a central portion, and a protruding portion protrudes from at least one of the first and second end portions.

An electro acoustic resonator is provided. The resonator has a gap short structure (GSS) to electrically short at least an area of the transversal gap to suppress transversal gap mode excitations. The gap short structure may be provided by a conductive stripe in the gap and parallel to or inclined with respect to the bus bar (BB) shorting adjacent IDT fingers. Additional connectors between the stripe and the bus bar may be provided. The connectors may have different pitch or metallization ratio with respect to the ID fingers. The connectors may be offset from the position of the fingers and my be inclined with respect to the bus bars. Multiple parallel stripes in the gap may provide a transversal reflector. By using a gap short structure a further improved transversal mode suppression of piston mode designs can be achieved.

A ladder filter includes series-arm resonators each including an IDT electrode and a reflector, and a parallel-arm resonator. In at least one of the series-arm resonators, where a wavelength that is determined by an electrode finger pitch of the IDT electrode is , an electrode finger center-to-center distance between an electrode finger located closest to the reflector among electrode fingers of the IDT electrode and an electrode finger located closest to the IDT electrode among electrode fingers of the reflector is less than about 0.5, and an anti-resonant frequency of the at least one of the series-arm resonators is higher than an anti-resonant frequency of at least another one of the series-arm resonators.

An acoustic wave device includes: a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20 or more and 48 or less; and a grating electrode that is composed of one or more metal films laminated on the substrate, and excites an acoustic wave, wherein when a density of each metal film in the one or more metal films is represented by i, a Poisson's ratio of each metal film is represented by Pi, a film thickness of each metal film is represented by hi, a density of Cu is represented by 0, a Poisson's ratio of Cu is represented by P0 and a pitch is represented by , a total value of (hi/)(i/0)(Pi/P0) for each metal film with respect to the one or more metal films is more than 0.08.