An acoustic wave filter device includes first and second acoustic wave filters provided on a piezoelectric substrate, an insulating layer that is provided on the piezoelectric substrate and has a smaller dielectric constant than the piezoelectric substrate, a first wiring conductor electrically connected to an electrode of the first acoustic wave filter, a second wiring conductor electrically connected to an electrode of the second acoustic wave filter, the first wiring conductor and the second wiring conductor facing each other on the insulating layer in plan view, and a ground conductor located between the insulating layer and the piezoelectric substrate in a region A circumscribing the first wiring conductor and the second wiring conductor on the insulating layer in plan view.

Embodiments of this disclosure relate to reducing coupling between acoustic wave resonators. An isolation region of a substrate can be located between acoustic wave resonators. The isolation region can reduce capacitive coupling through the substrate between the acoustic wave resonators. In certain embodiments, the isolation region can be located between acoustic wave resonators of different filters to thereby increase isolation between the filters.

A coupled cavity filter structure that uses a surface acoustic wave, in particular, a guided surface acoustic wave, comprises an acoustic wave propagating substrate, at least one input transducer structure and one output transducer structure, provided over the substrate, each comprising inter-digitated comb electrodes, at least one reflecting structure comprising at least one or more metallic strips, positioned at a distance and in between the input and output transducer structures, in the direction of propagation of an acoustic wave. The acoustic wave propagating substrate is a composite substrate comprising a base substrate and a piezoelectric layer. In additional embodiments, a coupled cavity filter structure comprises a groove. In additional embodiments, a SAW ladder filter device comprises at least two coupled cavity filter structures as described herein, wherein the at least two coupled cavity filter structures are positioned on a single line.

A surface acoustic wave (SAW) device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode located on an upper surface of the piezoelectric substrate, a cover covering the upper surface of the piezoelectric substrate from above the IDT electrode, at least one first via conductor extending through at least part of the cover from the upper surface of the piezoelectric substrate to an upper surface of the cover, at least one second via conductor located, on the piezoelectric substrate, inward from the first via conductor in a plan view, extending through at least part of the cover from the upper surface of the piezoelectric substrate to the upper surface of the cover, and having a smaller diameter than the first via conductor, and a conductive layer located on the upper surface of the cover and extending over an upper end of the second via conductor.

A coupled cavity filter structure that uses a surface acoustic wave, in particular, a guided surface acoustic wave, comprises an acoustic wave propagating substrate, at least one input transducer structure and one output transducer structure, provided over the substrate, each comprising inter-digitated comb electrodes, at least one reflecting structure comprising at least one or more metallic strips positioned at a distance and in between the input and output transducer structures, in the direction of propagation of an acoustic wave. The acoustic wave propagating substrate is a composite substrate comprising a base substrate and a piezoelectric layer. In additional embodiments, a coupled cavity filter structure comprises a groove. In additional embodiments, a SAW ladder filter device comprises at least two coupled cavity filter structures as described herein, wherein the at least two coupled cavity filter structures are positioned on a single line.

Embodiments of this disclosure relate to reducing coupling between acoustic wave resonators. An isolation region of a substrate can be located between acoustic wave resonators. The isolation region can reduce capacitive coupling through the substrate between the acoustic wave resonators. In certain embodiments, the isolation region can be located between acoustic wave resonators of different filters to thereby increase isolation between the filters.

Embodiments of this disclosure relate to methods of manufacturing acoustic wave components that include acoustic wave resonators that share a substrate. Laser light can be applied to alter a region of the substrate that is located between two of the acoustic wave resonators. Altering the region with laser light can reduce coupling between the two acoustic resonators through the substrate. The substrate can be monolithic after laser the light is applied.

An acoustic wave device includes a functional electrode provided on a first main surface of an element substrate, extended wiring lines that are electrically connected to the functional electrode and that are adjacent to each other on a second main surface facing away from the first main surface, external terminals that are connected to the extended wiring lines, respectively, and that are provided on the second main surface, a first resin portion that seals the acoustic wave device, and a second resin portion that is provided at a position which is between the element substrate and the first resin portion and which is on the second main surface.

An acoustic wave filter device includes first and second acoustic wave filters provided on a piezoelectric substrate, an insulating layer that is provided on the piezoelectric substrate and has a smaller dielectric constant than the piezoelectric substrate, a first wiring conductor electrically connected to an electrode of the first acoustic wave filter, a second wiring conductor electrically connected to an electrode of the second acoustic wave filter, the first wiring conductor and the second wiring conductor facing each other on the insulating layer in plan view, and a ground conductor located between the insulating layer and the piezoelectric substrate in a region A circumscribing the first wiring conductor and the second wiring conductor on the insulating layer in plan view.

A surface acoustic wave (SAW) device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode located on an upper surface of the piezoelectric substrate, a cover covering the upper surface of the piezoelectric substrate from above the IDT electrode, at least one first via conductor extending through at least part of the cover from the upper surface of the piezoelectric substrate to an upper surface of the cover, at least one second via conductor located, on the piezoelectric substrate, inward from the first via conductor in a plan view, extending through at least part of the cover from the upper surface of the piezoelectric substrate to the upper surface of the cover, and having a smaller diameter than the first via conductor, and a conductive layer located on the upper surface of the cover and extending over an upper end of the second via conductor.