Embodiments may relate to a die such as an acoustic wave resonator (AWR) die. The die may include a first filter and a second filter in the die body. The die may further include an electromagnetic interference (EMI) structure that surrounds at least one of the filters. Other embodiments may be described or claimed.

Reduced in size is a radio frequency component provided on a main surface of a mounting substrate on which an external connection electrode is disposed. A radio frequency module includes a mounting substrate, a first radio frequency component, and an external connection electrode. The mounting substrate has a first main surface and a second main surface opposed to each other. The first radio frequency component has a signal terminal and a ground terminal. The first radio frequency component is provided on the second main surface. The external connection electrode is provided on the second main surface. The first radio frequency component has a third main surface and a fourth main surface opposed to each other. The signal terminal is provided on the third main surface. The ground terminal is provided on the fourth main surface.

An electronic device includes a support substrate, a piezoelectric layer that is provided on the support substrate, a functional element including an electrode provided on a surface of the piezoelectric layer, a metallic frame body that is provided on the support substrate so as to surround the piezoelectric layer and the functional element in a plan view, a metallic lid that is provided on the frame body so as to form a space between the lid and the support substrate, and seals the functional element into the space, and a columnar body that is provided between the support substrate and the lid in the space.

A semiconductor module and a method for manufacturing the same are provided. The semiconductor module includes a substrate comprising a front side and at least one semiconductor device formed on the front side, a shielding structure formed on the at least one semiconductor device, and a piezoelectric layer formed on the shielding structure.

An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer positioned over a substrate. The acoustic wave device can also include an interdigital transducer electrode positioned over the piezoelectric layer. The acoustic wave device can also include a grounding structure positioned over the piezoelectric layer. The acoustic wave device can also include a conductive layer positioned between the piezoelectric layer and the substrate. The acoustic wave device can further include an electrical pathway that electrically connects the conductive layer to the grounding structure.

An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer positioned over a substrate. The acoustic wave device can also include an interdigital transducer electrode positioned over the piezoelectric layer. The acoustic wave device can also include a grounding structure positioned over the piezoelectric layer. The acoustic wave device can also include a conductive layer positioned under the substrate such that the substrate is positioned between the conductive layer and the grounding structure. The acoustic wave device can further include an electrical pathway that electrically connects the conductive layer to the grounding structure.

A method for manufacturing a semiconductor module is provided. The method includes: providing a substrate, wherein the substrate comprises a front side and at least one semiconductor element formed on the front side; forming a shielding structure on the at least one semiconductor element; forming a piezoelectric layer on the shielding structure.

The radio frequency module includes a mounting board, a first metal member, and a second metal member. The first metal member and the second metal member are disposed on the mounting board. The first metal member has a longitudinal direction along a first direction in plan view from a thickness direction of the mounting board. The second metal member has a longitudinal direction along a second direction in plan view from the thickness direction of the mounting board. The first or second metal member is placed between a first electronic component and a second electronic component. The first metal member has a first recessed portion. The second metal member has a through hole and a second recessed portion. The through hole passes through the second metal member in the direction intersecting with the second direction. The second recessed portion faces and is in contact with the first recessed portion.

A surface acoustic wave package has a piezoelectric layer over a substrate and a thermally conductive structure attached to the substrate. The outer boundary of the piezoelectric layer is removed (e.g., etched) so that a resulting outer edge of the piezoelectric layer is spaced inward of an inner edge of the thermally conductive structure. The piezoelectric layer does not contact the thermally conductive structure to inhibit damage to the piezoelectric layer due to a stress differential between the substrate and the thermally conductive structure during a packaging process.

A method of making an acoustic wave device includes forming or providing a substrate, forming or providing a functional layer over at least a portion of the substrate, forming or providing a piezoelectric layer over at least a portion of the functional layer, and forming or providing an interdigital transducer electrode over the piezoelectric layer. Forming or providing the piezoelectric layer includes removing a portion of the piezoelectric layer so that the piezoelectric layer has an outer edge spaced inward of an outer edge of the substrate, and so that the outer edge of the piezoelectric layer is tapered at an angle relative to a surface of the substrate to thereby reduce an acoustic reflection magnitude at said outer edge of the piezoelectric layer.