An oscillator includes a first container, a second container accommodated in the first container, a resonator element accommodated in the second container, a temperature sensor accommodated in the second container, a first circuit element that is accommodated in the second container and includes an oscillation circuit that causes the resonator element to oscillate so as to generate an oscillation signal on which temperature compensation is performed based on a detected temperature of the temperature sensor, and a second circuit element that is accommodated in the first container and includes a frequency control circuit that controls a frequency of the oscillation signal. The second container and the second circuit element are stacked.

Embodiments of the invention include an acoustic wave resonator (AWR) module. In an embodiment, the AWR module may include a first AWR substrate and a second AWR substrate affixed to the first AWR substrate. In an embodiment, the first AWR substrate and the second AWR substrate define a hermetically sealed cavity. A first AWR device may be positioned in the cavity and formed on the first AWR substrate, and a second AWR device may be positioned in the cavity and formed on the second AWR substrate. In an embodiment, a center frequency of the first AWR device is different than a center frequency of the second AWR device. In additional embodiment of the invention, the AWR module may be integrated into a hybrid filter. The hybrid filter may include an AWR module and other RF passive devices embedded in a packaging substrate.

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

A device structure comprises a patterned substrate comprising a substrate surface and a substrate post protruding from the substrate surface. The substrate post comprises a substrate post material. A component has a component top side and a component bottom side opposite the component top side. The component bottom side is disposed on the substrate post and extends over at least one edge of the substrate post. The component comprises a component material different from the substrate post material and the component comprises a broken (e.g., fractured) or separated component tether.

Provided is an oscillator including a resonator which includes a resonator element and a resonator element container accommodating the resonator element, an integrated circuit element which includes an inductor, and a nonconductive spacer member, in which the resonator and the integrated circuit element are stacked above each other, the resonator has a metal member, and the spacer member is provided between the resonator and the integrated circuit element.

A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.

Bulk acoustic wave resonators having a phononic crystal acoustic mirror are disclosed. An example integrated circuit package includes a bulk acoustic wave (BAW) resonator including a phononic crystal acoustic mirror (PCAM), the PCAM including a first arrangement of a first plurality of members in a first region, and a second arrangement of a second plurality of members in a second region, the first arrangement different from the second arrangement.

An oscillator includes a first package that is airtightly sealed, a second package that is housed in the first package and airtightly sealed, a resonation element that is housed in the second package, and a circuit element that is housed in the first package in a state of being positioned outside the second package and electrically connected to the resonation element and has an oscillation circuit and a temperature compensation circuit. In addition, the first package includes a base having two main surfaces and a recessed portion provided on one of the main surfaces, and a lid joined to the base so as to close the opening of the recessed portion. The circuit element is attached to the base, and the second package is attached to the circuit element.

A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.

A vibration element includes a base and a vibrating arm extending from the base. The vibrating arm includes an arm positioned between the base and a weight. A weight film is disposed on the weight. The weight has a first principal surface and a second principal surface in a front and back relationship with respect to a center plane of the arm. A center of gravity of the weight is located between the first principal surface and the center plane of the arm. A center of gravity of the weight film is located between the second principal surface and the center plane of the arm.