An RF diplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The diplexer can include a pair of filter circuits, each with a plurality of series resonator devices and shunt resonator devices. In the ladder topology, the series resonator devices are connected in series while shunt resonator devices are coupled in parallel to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a plurality of series resonator devices, and a pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. A multiplexing device or inductor device can be configured to select between the signals coming through the first and second filter circuits.

A method and structure for an essentially single crystal acoustic electronic device. The device includes a substrate having an enhancement layer formed overlying its surface region and an air cavity formed through a portion of the substrate. An essentially single crystal piezoelectric material is formed overlying the air cavity and a portion of the enhancement layer. Also, a first electrode material coupled to the backside surface region of the crystal piezoelectric material and spatially configured within the cavity. A second electrode material is formed overlying the topside of the piezoelectric material, and a dielectric layer formed overlying the second electrode material. Further, one or more shunt layers can be formed around the perimeter of a resonator region of the device to connect the piezoelectric material to the enhancement layer.

An oscillator includes a first package that is airtightly sealed, a second package that is housed in the first package and airtightly sealed, a resonation element that is housed in the second package, and a circuit element that is housed in the first package in a state of being positioned outside the second package and electrically connected to the resonation element and has an oscillation circuit and a temperature compensation circuit. In addition, the first package includes abase having two main surfaces and a recessed portion provided on one of the main surfaces, and a lid joined to the base so as to close the opening of the recessed portion. The circuit element is attached to the base, and the second package is attached to the circuit element.

A vibrator element includes a vibrating section having a rectangular shape in a plan view and including a first principal surface, a second principal surface, and an excitation portion sandwiched by a first excitation electrode and a second excitation electrode and making a thickness-shear vibration, a coupling arm extending from a corner part of the vibrating section in a first direction, and a supporting arm having a side surface at one end part side coupled to the coupling arm and extending in a second direction crossing the first direction, wherein the supporting arm includes a first supporting electrode electrically coupled to the first excitation electrode and bonded to a container via an adhesive member, and a width of the coupling arm along the second direction is four or more times a thickness of the excitation portion along a third direction crossing the first direction and the second direction and equal to or smaller than a length from an end part of the supporting arm at the coupling arm side to the first supporting electrode along the second direction.

An RF triplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

A vibration element includes a base and a vibrating arm extending from the base. The vibrating arm includes an arm positioned between the base and a weight. A weight film is disposed on the weight. The weight has a first principal surface and a second principal surface in a front and back relationship with respect to a center plane of the arm. A center of gravity of the weight is located between the first principal surface and the center plane of the arm. A center of gravity of the weight film is located between the second principal surface and the center plane of the arm.

Unreleased plane acoustic wave (PAW) resonators are disclosed. An example unreleased PAW resonator includes a substrate, a first acoustic reflector disposed on the substrate, and a piezoelectric layer disposed on the first acoustic reflector, wherein the first acoustic reflector and the piezoelectric layer are unreleased from the substrate.

Bulk acoustic wave resonators having a phononic crystal acoustic mirror are disclosed. An example integrated circuit package includes a bulk acoustic wave (BAW) resonator including a phononic crystal acoustic mirror (PCAM), the PCAM including a first arrangement of a first plurality of members in a first region, and a second arrangement of a second plurality of members in a second region, the first arrangement different from the second arrangement.

A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.