A semiconductor package comprises a leadframe having a die attach pad and one or more leads and a semiconductor die electrically connected to the die attach pad. A BAW device is attached to the semiconductor die. A mold compound surrounds the first semiconductor die and covers portions of the leadframe and a first portion of a top surface of the semiconductor die. The mold compound has a cavity area. The mold compound does not cover the BAW device or a second portion of the top surface of the semiconductor die in the cavity area. A glob top material is disposed within the cavity area. The glob top material covers the BAW device and the second portion of the top of the semiconductor die.

A vibrator device includes a base, a vibrator that includes a vibrator element and a vibrator element package, which accommodates the vibrator element and has a first terminal on a surface on a base side, a circuit element that is disposed between the base and the vibrator and has a first connection pad on a surface on a vibrator side, and a conductive connecting member that is disposed between the circuit element and the vibrator, bonds the circuit element and the vibrator together, and electrically connects the first connection pad and the first terminal together.

A resonator device includes a container accommodating a resonator component and a base substrate on which the container is mounted. The base substrate includes a recess overlapping the container in plan view and forming a space with the container, a first bonding portion overlapping the container in plan view and bonded to the container via a first adhesive, and a first wiring pattern provided such that the first bonding portion is disposed between the recess and the first wiring pattern in plan view.

In examples, a device comprises a semiconductor die, a thin-film layer, and an air cavity positioned between the semiconductor die and the thin-film layer. The air cavity comprises a resonator positioned on the semiconductor die. A rib couples to a surface of the thin-film layer opposite the air cavity.

The present disclosure provides a semiconductor package structure. The semiconductor package structure includes a substrate, a first electronic component and a support component. The first electronic component is disposed on the substrate. The first electronic component has a backside surface facing a first surface of the substrate. The support component is disposed between the backside surface of the first electronic component and the first surface of the substrate. The backside surface of the first electronic component has a first portion connected to the support component and a second portion exposed from the support component.

In examples, a device comprises a semiconductor die, a thin-film layer, and an air cavity positioned between the semiconductor die and the thin-film layer. The air cavity comprises a resonator positioned on the semiconductor die. A rib couples to a surface of the thin-film layer opposite the air cavity.

A vibration element includes a base and a vibrating arm extending from the base. The vibrating arm includes an arm positioned between the base and a weight. A weight film is disposed on the weight. The weight has a first principal surface and a second principal surface in a front and back relationship with respect to a center plane of the arm. A center of gravity of the weight is located between the first principal surface and the center plane of the arm. A center of gravity of the weight film is located between the second principal surface and the center plane of the arm.

An RF diplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The diplexer can include a pair of filter circuits, each with a plurality of series resonator devices and shunt resonator devices. In the ladder topology, the series resonator devices are connected in series while shunt resonator devices are coupled in parallel to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a plurality of series resonator devices, and a pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. A multiplexing device or inductor device can be configured to select between the signals coming through the first and second filter circuits.

A vibration element includes a base and a vibrating arm extending from the base. The vibrating arm includes an arm positioned between the base and a weight. A weight film is disposed on the weight. The weight has a first principal surface and a second principal surface in a front and back relationship with respect to a center plane of the arm. A center of gravity of the weight is located between the first principal surface and the center plane of the arm. A center of gravity of the weight film is located between the second principal surface and the center plane of the arm.

An acoustic wave device that can correctly perform an operation as the acoustic wave device and can achieve suppression of internal noise interference, a method of manufacturing the same, and a module are provided. The acoustic wave device includes a base member provided with a plurality of side surfaces, a ground pad wire, and a first shield film that covers the plurality of side surfaces. Since the ground pad wire and the first shield film are electrically connected to each other, operation as the acoustic wave device can correctly be performed and internal noise interference can be suppressed.