Patent classifications
H03H9/0542
Acoustic wave device, front-end circuit, and communication apparatus
An acoustic wave device includes an element substrate having piezoelectricity, a functional electrode on a first main surface of the element substrate, an extended wiring line electrically connected to the functional electrode and extending from the first main surface to a side surface of the element substrate, an external terminal electrically connected to the extended wiring line and on a second main surface of the element substrate, a first resin portion to seal the acoustic wave device, and a second resin portion at least between the extended wiring line on the side surface and the first resin portion. The second resin portion has a lower Young's modulus than the first resin portion.
BANDPASS FILTER CIRCUIT, MODULE
A bandpass filter circuit includes a fourth element that is a capacitor having one end connected to a first node, a fifth element that is a capacitor having one end connected to a second node, a sixth element that is a capacitor connected between other end of the fourth element and other end of the fifth element, a seventh element that is an inductor having one end connected to a fourth node to which the fourth element and the sixth element are connected, other end of the seventh element is connected to a ground terminal, and an eighth element that is an inductor having one end connected to a fifth node to which the fifth element and the sixth element are connected, other end of the eighth element is connected to the ground terminal.
ACOUSTIC WAVE DEVICE AND METHOD OF MANUFACTURING THE SAME
An acoustic wave device including: a POI structure including: a material layer where a high acoustic velocity layer and a low acoustic velocity layer are alternate, a substrate is a lowermost high acoustic velocity layer; a first piezoelectric layer located above the material layer, wherein a layer adjacent to the first piezoelectric layer is referred to as a surface low acoustic velocity layer; wherein an acoustic velocity of a bulk wave propagated in the high acoustic velocity layer and the low high acoustic velocity layer is higher than and lower than an acoustic velocity of a bulk wave of the first piezoelectric layer, respectively. The POI structure includes at least two regions, a first device having a resonance of a first vibration mode is manufactured in the first region, and a second device having a resonance of a second vibration mode is manufactured in a second region.
High-frequency module, high-frequency circuit, and communication device
A filter includes a first input/output electrode and the second input/output electrode, and is arranged on a first main surface of a mounting substrate. The mounting substrate includes a first land electrode, a second land electrode, a ground terminal, and a plurality of via conductors. The first land electrode is connected to the first input/output electrode. The second land electrode is connected to the second input/output electrode. The ground terminal is located closer to a second main surface side than the first main surface in a thickness direction of the mounting substrate. The plurality of via conductors is arranged between the first main surface and the second main surface, and is connected to the ground terminal. The plurality of via conductors is located between the first land electrode and the second land electrode in a plan view from the thickness direction of the mounting substrate.
DYNAMIC BAND STEERING FILTER BANK MODULE WITH PASSBAND ALLOCATIONS
Disclosed is a filter bank module having a substrate, an antenna port terminal, and a filter bank die. The filter bank die is fixed to the substrate and includes a first acoustic wave (AW) filter having a first antenna terminal coupled to the antenna port terminal and a first filter terminal, wherein the first AW filter is configured to pass a first passband and attenuate frequencies outside the first passband, and a second AW filter having a second filter terminal, and a second antenna terminal coupled to the first antenna terminal to effectively diplex signals that pass through the first AW filter and the second AW filter, wherein the second AW filter is configured to pass a second passband that is spaced from the first passband to minimize interference between first bandpass and the second bandpass while attenuating frequencies outside the second passband.
DYNAMIC BAND STEERING FILTER BANK DIE
Disclosed is a filter bank die having a first acoustic wave (AW) filter having a first antenna terminal and a first filter terminal, and a second AW filter having a second filter terminal, and a second antenna terminal coupled to the first antenna terminal to effectively diplex signals that pass through the first AW filter and the second AW filter.
DYNAMIC BAND STEERING FILTER BANK MODULE
Disclosed is a filter bank module having a substrate, an antenna port terminal, and a filter bank die. The filter bank die is fixed to the substrate and includes a first acoustic wave (AW) filter having a first antenna terminal coupled to the antenna port terminal and a first filter terminal, and a second AW filter having a second filter terminal, and a second antenna terminal coupled to the first antenna terminal to effectively diplex signals that pass through the first AW filter and the second AW filter.
Acoustic wave filter, multiplexer, and communication apparatus
An acoustic wave filter includes a first signal terminal, an antenna terminal, a ladder-type filter connected between the first signal terminal and the antenna terminal and including one or more serial resonators and one or more parallel resonators connected in a ladder shape, and a capacitor part and an inductor part which are connected in series between the first signal terminal and a reference potential.
Acoustic wave device, front-end circuit, and communication apparatus
An acoustic wave device includes a functional electrode provided on a first main surface of an element substrate, extended wiring lines that are electrically connected to the functional electrode and that are adjacent to each other on a second main surface facing away from the first main surface, external terminals that are connected to the extended wiring lines, respectively, and that are provided on the second main surface, a first resin portion that seals the acoustic wave device, and a second resin portion that is provided at a position which is between the element substrate and the first resin portion and which is on the second main surface.
Piezoelectric devices fabricated in packaging build-up layers
Piezoelectric devices are described fabricated in packaging buildup layers. In one example, a package has a plurality of conductive routing layers and a plurality of organic dielectric layers between the conductive routing layers. A die attach area has a plurality of vias to connect to a microelectronic die, the vias connecting to respective conductive routing layers. A piezoelectric device is formed on an organic dielectric layer, the piezoelectric device having at least one electrode coupled to a conductive routing layer.