An elastic wave device includes an IDT electrode on a second main surface of an element substrate that includes a piezoelectric layer, a support layer on the second main surface and surrounding the IDT electrode, a cover member on the support layer, and routing wiring lines extending from the second main surface of the element substrate onto side surfaces of the element substrate.

A vibrating arm of a vibrator element has a first surface, a second surface at an opposite side to the first surface in a Z direction, a first side surface and a second side surface as side surfaces, and a third side surface as a tip surface. At least one of the first side surface, the second side surface, and the third side surface includes a first side surface part tilted with respect to a Z direction, and a second side surface part tilted toward the first surface or the second surface with respect to the first side surface part. The first weight is arranged so that an outer edge of the first weight is located at inner side of innermost parts in the first side surface part and the second side surface part, or at the same position as the innermost parts when viewed from the Z direction.

An acoustic wave device includes a first substrate, an acoustic wave element provided on a first surface of the piezoelectric layer, a second substrate, a first metal layer provided on the first surface and conductively connected to the acoustic wave element, a second metal layer provided on a second surface of the second substrate, a third metal layer that connects the first metal layer to the second metal layer, is thicker than the first metal layer and the second metal layer, and contains copper or silver, and a first conductive layer that covers a side surface of the third metal layer, and a third surface of the first metal layer in a region surrounding another region where the third metal layer is bonded to the first metal layer, is thinner than the third metal layer, and contains a component other than copper, silver, and tin as a main component.

Disclosed is a radio frequency (RF) filter that vertically integrates an acoustic wave filter with an integrated passive device (IPD) filter. The acoustic wave filter provides selectivity at fundamental frequency band while the IPD filter provides rejection at harmonic frequency bands.

An electronic component package includes a lid, a first layer, a second layer disposed between the first layer and the lid and configuring a first frame, a third layer disposed between the second layer and the lid and configuring a second frame, a bonding member bonding the third layer to the lid, and a via wire electrically coupled to the lid and penetrating the second frame, in which, when an inner diameter of a first corner portion of the first frame is denoted by R1 and an inner diameter of a second corner portion of the second frame overlapping the first corner portion in a plan view is denoted by R2, R1<R2, and an inner surface of the second corner portion protrudes more than an inner surface of the first corner portion in a cross-sectional view.

A resonator device includes a resonator element, a base which has a first surface and a second surface that are in front-back relation, and in which the resonator element is arranged at the first surface, an integrated circuit provided to the base, a lid which has an inner surface opposed to the resonator element, and an outer surface in a front-back relationship with the inner surface, and which is bonded to the base so as to house the resonator element, and a radiation layer which is arranged at the inner surface of the lid, and is higher in emissivity than the lid.

A third through hole is formed in a crystal resonator plate of a crystal resonator to penetrate between a first main surface and a second main surface. A through electrode of the third through hole is conducted to a first excitation electrode. A seventh through hole is formed in a first sealing member of the crystal resonator to penetrate between a first main surface and a second main surface. The through electrode of the third through hole is conducted to the through electrode of the seventh through hole. The third through hole is not superimposed to the seventh through hole in plan view.

In a composite component, a semiconductor device is stacked on an elastic wave device. Side electrodes extend from at least one side surface of a piezoelectric substrate of the elastic wave device to at least a side surface of a semiconductor substrate of the semiconductor device and are connected to an IDT electrode and functional electrodes. The side electrodes extend onto at least one of a second main surface of the piezoelectric substrate and a second main surface of the semiconductor substrate.

A vibration element includes a base and a vibrating arm extending from the base. The vibrating arm includes an arm positioned between the base and a weight. A weight film is disposed on the weight. The weight has a first principal surface and a second principal surface in a front and back relationship with respect to a center plane of the arm. A center of gravity of the weight is located between the first principal surface and the center plane of the arm. A center of gravity of the weight film is located between the second principal surface and the center plane of the arm.

A vibrator device includes a vibration element including a vibration portion and a fixed portion, a supporting member to which the fixed portion is attached to support the vibration element, and a first substrate to which the supporting member is attached, the supporting member includes a attaching portion attached to the first substrate, and A1≥A2 is satisfied in a case where an area of a rectangular region including the fixed portion is A1 and an area of a rectangular region including the attaching portion is A2 in a plan view seen from a thickness direction of the vibration element.