An electronic device package includes a lower surface for conducting electronic signals, a first solder bond pad having a first size disposed on the lower surface, and a plurality of second solder bond pads having second sizes smaller than the first size disposed on the lower surface and surrounding the first solder bond pad.

A micromechanical system (MEMS) acoustic wave resonator is formed on a base substrate. A piezoelectric member is mounted on the base substrate. The piezoelectric member has a first electrode covering a first surface of the piezoelectric member and a second electrode covering a second surface of the piezoelectric member opposite the first electrode, the second electrode being bounded by a perimeter edge. A first guard ring is positioned on the second electrode spaced apart from the perimeter edge of the second electrode.

A method of manufacturing a packaged acoustic wave component includes forming or providing a cap substrate. The method also includes forming a metal shield plate on a surface of the cap substrate. The cap substrate is attached to a device substrate that has an acoustic wave device on a surface thereof such that the metal shield plate is spaced from and faces the acoustic wave device and so that a peripheral metal wall extends between the device substrate and the metal plate. The metal shield plate and peripheral metal wall enclose and electrically shield the acoustic wave device.

A packaged acoustic wave component has an acoustic wave device mounted on a device substrate and a cap substrate spaced above the device substrate. The packaged acoustic wave component also has a shield structure including a metal plate disposed on a bottom surface of the cap substrate that faces the device substrate, the metal plate being spaced above the acoustic wave device, and a peripheral metal wall attached to the metal plate that extends to the device substrate. The shield structure encloses and electrically shields the acoustic wave device.

A bulk acoustic wave (BAW) structure includes a single crystal piezoelectric material layer, a first electrode, a second electrode and an acoustic reflector. The first and second electrodes are respectively located on a first surface and a second surface of the single crystal piezoelectric material layer. The area of the second electrode is greater than or equal to that of the second surface of the single crystal piezoelectric material layer, and the contact area of the single crystal piezoelectric material layer with the second electrode is equal to the area of the second surface of the single crystal piezoelectric material layer. The acoustic reflector is disposed on a surface of the first electrode.

A component (B) comprising a carrier (TR), on which a functional structure (FS) is covered by a thin-layer covering (DSA) spanning across and resting on the carrier. On a planarization layer arranged above the thin-layer covering (DSA), a wiring level (M1, M2) is realized, which comprises structured conductor paths and which is connected via through-connections to the functional structure (FS).

An assembly including an electrical connection substrate formed of material having a Young's modulus of less than about 10 MPa, an acoustic device die having opposite end portions mounted on and electrically connected to the electrical connection substrate and a mold compound layer encapsulating the acoustic device die and interfacing with the substrate.

A structure and method for integrating a crystal resonator with a control circuit are disclosed. A piezoelectric vibrator (500) is formed on a back side of a device wafer (100) containing the control circuit, and planar fabrication processes are utilized to form a cap layer (720) which encloses the piezoelectric vibrator (500) within an upper cavity (700). Additionally, a semiconductor die (900) can be bonded to a front side of the device wafer (100). In addition to an increased degree of integration of the crystal resonator due to such integration with both the control circuit (110) and the semiconductor die (900), this also allows on-chip modulation of the crystal resonator's parameters. Moreover, compared with traditional crystal resonators, the resulting crystal resonator is more compact in size and hence less power-consuming.

A substrate that includes an encapsulation layer, a first acoustic resonator, a second acoustic resonator, at least one first dielectric layer, a plurality of first interconnects, at least one second dielectric layer, and a plurality of second interconnects. The first acoustic resonator is located in the encapsulation layer. The first acoustic resonator includes a first piezoelectric substrate comprising a first thickness. The second acoustic is located in the encapsulation layer. The second acoustic resonator includes a second piezoelectric substrate comprising a second thickness that is different than the first thickness. The at least one first dielectric layer is coupled to a first surface of the encapsulation layer. The plurality of first interconnects is coupled to the first surface of the encapsulation layer. The plurality of first interconnects is located at least in the at least one first dielectric layer.

An electrical device includes an electronic component, a membrane and a cover. The electronic component has a first surface and a second surface opposite to the first surface. The electronic component has a cavity extending from the first surface of the electronic component into the electronic component. The membrane is disposed within the cavity of the electronic component. The cover is disposed on the first surface of the electronic component.