A device that includes a substrate; a die couple to the substrate, a frame located between the die and the substrate, wherein the frame is further located along a periphery of the die; a solder interconnect coupled to the frame and the substrate; and a sealed cavity located between the die and the substrate, wherein a wall of the sealed cavity is formed by the solder interconnect and the frame. The frame may be configured to be coupled to ground.

An apparatus includes a microelectromechanical system (MEMS) die having a first surface and an opposing second surface. The MEMS die includes a surface-mounted resonator on the first surface and includes a first inductor. The apparatus also includes first and second dies. The first die has a third surface and an opposing fourth surface. The first die is coupled to the MEMS die such that the third surface of the first die faces the first surface of the MEMS die. The first and second surfaces are spaced apart. The first die includes an oscillator circuit and a second inductor. The oscillator circuit is coupled to the second inductor. The second inductor is inductively coupled to the first inductor. The second die is electrically coupled to the first die.

A family of resonators and other devices which employ virtual electrodes using pixel based projection across a gap onto a material. In many embodiments, the pixel is projected onto a piezoelectric material, such as quartz crystal, by an integrated circuit die placed opposite a face of the crystal. The die projects a single pixel of electromagnetic energy onto the crystal, which vibrates and produces its own electromagnetic energy which is received by the pixel. Pixel projection onto other materials, including non-resonant materials, is also disclosed. The pixel based projected electrodes may be used in combination with, or in lieu of, conventional metal electrodes. The single pixel may be controlled in gain and phase in order to achieve specific desired resonator response characteristics. Many types of devices using pixel based electrode projection are disclosedincluding resonators having one or more single-pixel virtual electrodes, and other types of devices.

A method for manufacturing a Bulk Acoustic Wave (BAW) resonator module is provided. The method includes providing a substrate, defining a platform region on the surface of the substrate, disposing a BAW resonator device on the surface of the substrate within the platform region, and etching an isolation trench circumscribing at least 50% of a circumference of the platform region.

An acoustic resonator filter package includes an acoustic resonator including a piezoelectric layer, a first electrode disposed on a first surface of the piezoelectric layer, and a second electrode disposed on a second surface of the piezoelectric layer; a first substrate having an upper surface on which the acoustic resonator is disposed, the first substrate comprising a first coupling member surrounding the acoustic resonator; a filter spaced apart from the acoustic resonator in an upward direction; a second substrate having a lower surface on which the filter is disposed, the second substrate including a second coupling member disposed above the first coupling member; and a connection member connecting the first coupling member and the second coupling member to each other, the connection member being made of a material different from a material of which the first coupling member and the second coupling member are made.

The present invention provides a piezoelectric quartz crystal resonator. The piezoelectric quartz crystal resonator comprises a circuit board, a quartz crystal resonator and a thermistor, wherein the thermistor is configured to detect a temperature of the quartz crystal resonator, the thermistor and the quartz crystal resonator are arranged on the circuit board and interconnected with each other via electric wires arranged on the circuit board; the thermistor and the quartz crystal resonator are sealed independently from each other by thermoplastic material, and the thermoplastic material sealing the thermistor is in contact with the thermoplastic material sealing the quartz crystal resonator.

A micromechanical system (MEMS) acoustic wave resonator is formed on a base substrate. A piezoelectric member is mounted on the base substrate. The piezoelectric member has a first electrode covering a first surface of the piezoelectric member and a second electrode covering a second surface of the piezoelectric member opposite the first electrode, the second electrode being bounded by a perimeter edge. A first guard ring is positioned on the second electrode spaced apart from the perimeter edge of the second electrode.

A wideband filter includes a passive substrate and an acoustic resonator chip on the passive substrate. The wideband filter further includes a pair of 3D inductors and a 3D transformer on the passive substrate. The pair of 3D inductors and the 3D transformer are connected to the acoustic resonator chip.

A Fin Bulk Acoustic Resonator (FinBAR) includes a fin integrally fabricated on a substrate of a glass or a semiconductor, an inner electrode deposited on the fin, a piezoelectric layer disposed on the inner electrode, an outer electrode deposited on the piezoelectric layer, a first electrode and a second electrode formed on the top surface of the substrate and connected to the inner and outer electrodes respectfully. The fin is characterized with a larger height than its width. A FinBAR array including a number of the FinBARs with different fin widths sequentially located on one chip is capable of continuously filtering frequencies in UHF and SHF bands.

Embodiments of the invention include an acoustic wave resonator (AWR) module. In an embodiment, the AWR module may include a first AWR substrate and a second AWR substrate affixed to the first AWR substrate. In an embodiment, the first AWR substrate and the second AWR substrate define a hermetically sealed cavity. A first AWR device may be positioned in the cavity and formed on the first AWR substrate, and a second AWR device may be positioned in the cavity and formed on the second AWR substrate. In an embodiment, a center frequency of the first AWR device is different than a center frequency of the second AWR device. In additional embodiment of the invention, the AWR module may be integrated into a hybrid filter. The hybrid filter may include an AWR module and other RF passive devices embedded in a packaging substrate.