A method for fabricating a piezoelectric quartz crystal resonator is disclosed, which comprises: arranging a plurality of design units on a circuit board, wherein each design unit includes a quartz crystal resonator and a thermistor, and a division clearance is preset between every two adjacent design units; in each design unit, arranging at least one extension welding pad and at least one resonator welding pad; arranging at least one thermistor welding pad corresponding to the thermistor at the circuit board; welding the quartz crystal resonator and the thermistor onto their corresponding welding pads respectively; using thermoplastic material to seal the welded quartz crystal resonator and thermistor; dividing the circuit board processed by the thermoplastic material according to the design units.

An apparatus includes a microelectromechanical system (MEMS) die having a first surface and an opposing second surface. The MEMS die includes a surface-mounted resonator on the first surface and includes a first inductor. The apparatus also includes first and second dies. The first die has a third surface and an opposing fourth surface. The first die is coupled to the MEMS die such that the third surface of the first die faces the first surface of the MEMS die. The first and second surfaces are spaced apart. The first die includes an oscillator circuit and a second inductor. The oscillator circuit is coupled to the second inductor. The second inductor is inductively coupled to the first inductor. The second die is electrically coupled to the first die.

A bulk-acoustic resonator module includes: a module substrate; a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate; and a sealing portion sealing the bulk-acoustic resonator. The bulk-acoustic resonator includes a resonating portion disposed opposite to an upper surface of the module substrate. A space is disposed between the resonating portion and the upper surface of the module substrate.

A method of manufacture for an acoustic resonator device. The method includes forming a nucleation layer characterized by nucleation growth parameters overlying a substrate and forming a strained piezoelectric layer overlying the nucleation layer. The strained piezoelectric layer is characterized by a strain condition and piezoelectric layer parameters. The process of forming the strained piezoelectric layer can include an epitaxial growth process configured by nucleation growth parameters and piezoelectric layer parameters to modulate the strain condition in the strained piezoelectric layer. By modulating the strain condition, the piezoelectric properties of the resulting piezoelectric layer can be adjusted and improved for specific applications.

An electronic device package includes a lower surface for conducting electronic signals, a first solder bond pad having a first size disposed on the lower surface, and a plurality of second solder bond pads having second sizes smaller than the first size disposed on the lower surface and surrounding the first solder bond pad.

A fluidic sensing device includes a first sidewall, a second sidewall, a bulk acoustic resonator structure, a biomolecule, and a cover. A fluidic channel is defined between the first and second sidewalls. The bulk acoustic resonator structure has a surface defining at least a portion of the bottom of the channel. The biomolecule is attached to the surface of the bulk acoustic resonator that forms the bottom of the channel. The cover is disposed over the channel and the first and second sidewalls. A portion of the cover disposed over the channel defines at least a portion of the top of the channel and blocks UV radiation from being transmitted through the cover. A first portion of the cover disposed over the first sidewall is transparent to UV radiation, and a second portion of the cover disposed over the second sidewall is transparent to UV radiation.

In described examples of a micromechanical system (MEMS), a rigid cantilevered platform is formed on a base substrate. The cantilevered platform is anchored to the base substrate by only a single anchor point. A MEMS resonator is formed on the cantilevered platform.

A wafer-level chip-scale package includes a polymeric body having a conductive via passing through the polymeric body and a piezoelectric substrate directly bonded to an upper end of the conductive via. The wafer-level chip-scale package further includes a cavity defined between a portion of the polymeric body and the piezoelectric substrate and a metal seal ring disposed in the body and having an upper end bonded to the piezoelectric substrate, the metal seal ring passing only partially through the body.

A bulk acoustic wave filter device includes a substrate, a lower electrode on the substrate, a piezoelectric layer covering at least a portion of the lower electrode, and an upper electrode covering at least a portion of the piezoelectric layer. The upper electrode has a density reduction layer disposed on at least a portion thereof, except a central portion of a resonance region of the bulk acoustic wave filter device that deforms and vibrates with the piezoelectric layer during activation of the piezoelectric layer. The density reduction layer has a density lower than a density of other portions of the upper electrode.

A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.