According to various aspects and embodiments, a method for forming a packaged electronic device is provided. In accordance with one embodiment, the method comprises depositing a layer of temporary adhesive material on at least a portion of a surface of a first substrate having a coefficient of thermal expansion, depositing a layer of dielectric material on at least a portion of the layer of temporary adhesive material, forming at least one seal ring on at least a portion of the layer of dielectric material, providing a second substrate having a coefficient of thermal expansion that is substantially the same as the coefficient of thermal expansion of the first substrate, the second substrate having at least one bonding structure attached to a surface of the second substrate, and aligning the at least one seal ring to the at least one bonding structure and bonding the first substrate to the second substrate.

A resonator includes a support frame, a rectangular vibrating plate that performs contour vibration in a predetermined direction, and two pairs of support arms. The vibrating plate includes four vibration regions arranged in a row in the lengthwise direction and electrodes disposed in the vibration regions. Each of the vibration regions vibrate with a phase opposite to phases with which the adjacent vibration regions vibrate upon excitation. A center line of a pair of the electrodes in the lengthwise direction is offset from a center line, in the lengthwise direction, of a corresponding vibration region that includes the electrode disposed thereon.

A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.

A resonator that includes a piezoelectric vibrator, a frame, and a first node generator between the piezoelectric vibrator and the frame. Moreover, a first connecting arm connects the first node generator to the piezoelectric vibrator that opposes the first, and a first holding arm connects the first node generator to a part of the frame that opposes the first node generator. The first node generator includes a width extending in a second direction, which is orthogonal to a first direction of the first connecting arm, that is a maximum width where the first node generator is closer to the first connecting arm than a center of the first node generator relative to the first direction. Moreover, the width of the first node generator gradually decreases from the maximum width as the first node generator extends towards the first holding arm.

A resonance device is provided that includes a lower cover; an upper cover coupled to the lower cover; and a resonator that has vibration arms that generate bending vibration in an interior space provided between the lower cover and the upper cover. Moreover, the vibration arms have distal ends provided with metal films on a side that faces the upper cover, and a gap is provided between the distal ends of the vibration arms and the upper cover that is larger than a gap between the distal ends of the vibration arms and the lower cover.

A resonator is provided that includes a vibrating section that vibrates in a contour vibration mode, a frame that surrounds at least a portion of the vibrating section, supporting sections extending along a Y-axis direction and connecting the vibrating section and the frame. The vibrating section includes a through hole that extends along an X-axis direction perpendicular to the Y-axis direction such that a coupling section is disposed between the through hole and each of the supporting sections. The length SL of the through hole in the X-axis direction is longer than the length Sd of the coupling section in the Y-axis direction.

A piezoelectric vibrator is a piezoelectric vibrator including a vibration portion. The vibration portion has an n-type Si layer which is a degenerated semiconductor and which has a resistivity of not less than 0.5 mΩcm and not greater than 1.2 mΩcm and preferably not greater than 0.9 mΩcm.

An electronic component that includes an electronic element; a base member having an upper surface on which the electronic element is mounted; and a lid member bonded to the base member via a bonding member such that the electronic element is hermetically sealed therebetween. The bonding member is made of an insulating material containing a first metal. The lid member has an outermost layer formed on at least a surface of the lid member facing the base member. The outermost layer of the lid member has a solid solution layer of the first metal and a second metal at at least a portion of the outermost layer.

A resonator is provided that includes a vibrating portion including a three or more vibrating arms each having a fixed end and a free end, with at least two of the vibrating arms configured to bend out of plane in different phases, and a base having a front end connected to the fixed end of each vibrating arm and a rear end opposite from the front end. Moreover, a frame is disposed at least partially around the vibrating portion, a holding arm is provided between the vibrating portion and the holding portion and includes a first end connected to the base and a second end connected to the frame, and a plurality of holes disposed in the vibrating portion. Moreover, the plurality of holes are each formed in a region between any one pair of adjacent two of the plurality of vibrating arms in the base portion.

A resonance device that includes a MEMS substrate that includes a resonator, a top cover having a silicon oxide film on a surface thereof that faces the MEMS substrate, and a bonding part that bonds the MEMS substrate and the top cover to each other so as to seal a vibration space of the resonator. The silicon oxide film includes a through hole that is formed along at least part of the periphery of the vibration space when the top cover is viewed in a plan view and that penetrates to a surface of the top cover. The through hole includes a first metal layer.