An improved electro acoustic RF filter (FC) is provided. The RF filter comprises an electro acoustic resonator (EAR) connected between an input port and an output port, an impedance element and a damping and/or dissipation element (DE) in mechanical contact to the impedance element. The damping and/or dissipation element is provided and configured to remove acoustic energy from the impedance element which has a similar construction as the resonator on the same substrate. With such a construction an acoustically inactive impedance element (AIIE) is obtained.

An electronic device includes: a first substrate including a first functional element located on an upper surface of the first substrate; a second substrate that is flip-chip mounted on the upper surface of the first substrate through a bump, and includes a second functional element located on a lower surface of the second substrate; and a sealing member that is located on the upper surface of the first substrate, surrounds the second substrate in plan view, is not located between the first substrate and the second substrate, seals the first functional element and the second functional element so that the first functional element and the second functional element are located across an air gap.

An acoustic wave filter device includes a base comprising an acoustic wave filter part formed on one surface thereof and including a bonding part formed to surround the acoustic wave filter part, and a cap including a depression groove formed therein and a bonding counterpart formed to correspond to the bonding part. The depression groove is positioned over the acoustic wave filter part. The bonding part and the bonding counterpart receive a voltage to deform and bond the bonding part and the bonding counterpart to each other.

An oscillation module includes an SAW filter, and a high-pass filter formed in an integrated circuit, the high-pass filter has a coil part, a capacitance part, and a first interconnection adapted to connect the coil part and the capacitance part to each other, and the capacitance part includes a capacitance array.

An electronic component has a support member, an SAW element which is mounted on the support member with a space S therebetween and which has a facing surface which faces the support member, and a resin portion which covers the SAW element and which is provided so as to seal the space S. The SAW element has a piezoelectric substrate, an IDT provided on the facing surface of the piezoelectric board, an wiring (an outer wiring) which is provided on the facing surface of the piezoelectric board and extends from the IDT toward the periphery side of the piezoelectric board, and a dam member which is adjacent to a lateral edge portion of the wiring and which is provided locally relative to the circumferential direction which surrounds the IDT.

An acoustic wave device includes: a first substrate including a support substrate and a piezoelectric substrate bonded on an upper surface of the support substrate, and including a first acoustic wave element located on an upper surface of the piezoelectric substrate; a ring-shaped metal layer located in a region that surrounds the first acoustic wave element and in which the piezoelectric substrate is removed, a second substrate flip-chip mounted on an upper surface of the first substrate and including a functional element located on a lower surface of the second substrate; and a metallic member located on an upper surface of the ring-shaped metal layer, surrounding the second substrate in plan view, not located between the first substrate and the second substrate, and sealing the first acoustic wave element and the functional element so that the first acoustic wave element and the functional element are located across an air gap.

The invention provides a filter device, an RF front-end device and a wireless communication device. The filter device comprises a substrate, at least one resonance device, a passive device and a connector, wherein the at least one resonance device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the passive device is located on the second side. The at least one resonance device is connected to the passive device through the connector. The RF filter device formed by integrating the resonance device (such as an SAW resonance device or a BAW resonance device) and the passive device (such as an IPD) in one die can broaden the passband width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.

Embodiments of the invention include an acoustic wave resonator (AWR) module. In an embodiment, the AWR module may include a first AWR substrate and a second AWR substrate affixed to the first AWR substrate. In an embodiment, the first AWR substrate and the second AWR substrate define a hermetically sealed cavity. A first AWR device may be positioned in the cavity and formed on the first AWR substrate, and a second AWR device may be positioned in the cavity and formed on the second AWR substrate. In an embodiment, a center frequency of the first AWR device is different than a center frequency of the second AWR device. In additional embodiment of the invention, the AWR module may be integrated into a hybrid filter. The hybrid filter may include an AWR module and other RF passive devices embedded in a packaging substrate.

An electronic component includes a substrate and side wires. The substrate includes a first major surface, a second major surface, and a side surface. The side wires are on the side surface of the substrate and spaced apart from each other in a direction along an outer periphery of the substrate when viewed in plan in a thickness direction of the substrate. At least a portion of each of the side wires is provided indirectly on the side surface of the substrate. The electronic component further includes an electrically insulating layer interposed between the side surface of the substrate and the at least a portion of each of the side wires. Each of the side wires includes a bent portion bent when viewed in plan in the thickness direction of the substrate.

A package that includes a first filter device and a second filter device coupled to the first filter device. The first filter device includes a first substrate comprising a first piezoelectric material, and a first metal layer coupled to a first surface of the first substrate. The second filter device includes a second substrate comprising a second piezoelectric material, and a second metal layer coupled to a first surface of the first substrate. The package includes a first pillar interconnect configured to be electrically coupled to the first metal layer of the first filter device, where the first pillar interconnect extends through the second filter device. The package further includes a second pillar interconnect configured to be electrically coupled to the second metal layer of the second filter device.