A stacked filter package is disclosed. The stacked filter package can include a first acoustic wave device having a first device type. The first acoustic wave device includes a first substrate having a first coefficient of thermal expansion. The stacked filter package can include a second acoustic wave device having a second device type different from the first device type. The second acoustic wave device includes a second substrate having a second coefficient of thermal expansion. The second coefficient of thermal expansion is at least double the first coefficient of thermal expansion. The stacked filter package can include a bonding structure between the first and second substrates. The bonding structure couples the first and second substrate.

An acoustic wave resonator is disclosed. The acoustic wave resonator can include a plurality of interdigital transducer electrodes and a multilayer piezoelectric substrate (MPS) adjacent the plurality of interdigital transducer electrodes. The MPS includes a first substrate layer of a piezoelectric material, and a second substrate layer of silicon that is bonded to the first layer. The silicon has a cut direction and/or acoustic wave propagation direction that is different from those of a silicon substrate. The silicon substrate has a cut direction and a propagation direction property defined by the silicon cut angle of {100} and the propagation direction <110>.

An acoustic wave filter includes a substrate and a piezoelectric layer over the substrate. First acoustic wave resonators are disposed over the piezoelectric layer and arranged in series along a first branch, and second acoustic wave resonators are disposed over the piezoelectric layer, arranged in parallel, and connected to the first branch and to ground. The first and second acoustic wave resonators include an interdigital transducer electrode interposed between a pair of reflectors. The interdigital transducer electrode of one or more of the second plurality of acoustic wave resonators has a wider duty factor than the interdigital transducer electrodes of the first plurality of acoustic wave resonators.

An acoustic wave filter includes a substrate and a piezoelectric layer over the substrate. First acoustic wave resonators are disposed over the piezoelectric layer and arranged in series along a first branch, and second acoustic wave resonators are disposed over the piezoelectric layer, arranged in parallel, and connected to the first branch and to ground. The first and second acoustic wave resonators include an interdigital transducer electrode interposed between a pair of reflectors. A layer of positive temperature coefficient of frequency dielectric material is disposed over one or more of the first plurality of acoustic wave resonators to control the temperature coefficient of frequency and improve temperature stability of the acoustic wave filter.

An electronic device package includes a lower surface for conducting electronic signals, a first solder bond pad having a first size disposed on the lower surface, and a plurality of second solder bond pads having second sizes smaller than the first size disposed on the lower surface and surrounding the first solder bond pad.

An electronic device package includes a lower surface for conducting electronic signals, a first solder bond pad having a first size disposed on the lower surface, and a plurality of second solder bond pads having second sizes smaller than the first size disposed on the lower surface and surrounding the first solder bond pad.

An acoustic wave device is disclosed. the acoustic wave device can include a support substrate, a first solid acoustic mirror over the support substrate, a piezoelectric layer positioned over the first solid acoustic mirror, an interdigital transducer electrode at least partially embedded in the piezoelectric layer, and a second solid acoustic mirror over the over the piezoelectric layer. The interdigital transducer electrode is configured to generate an acoustic wave having a wavelength of L. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the acoustic wave.

A longitudinally leaky surface acoustic wave device is disclosed. The longitudinally leaky surface acoustic wave device can include a support substrate, a first solid acoustic mirror over the support substrate, a piezoelectric layer positioned over the first solid acoustic mirror, an interdigital transducer electrode over the piezoelectric layer, and a second solid acoustic mirror over the over the interdigital transducer electrode. The interdigital transducer electrode is configured to generate an acoustic wave that propagates in a lateral direction. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the acoustic wave. The piezoelectric layer can have a cut angle of (90±30, 90±30, 40±30).

Aspects of this disclosure relate to a method of manufacturing a packaged acoustic wave component with two acoustic wave devices interconnected by a thermally conductive frame. The method includes providing a first acoustic wave device having a multi-layer piezoelectric substrate structure with a first piezoelectric layer disposed over a first support layer and an interdigital transducer electrode. The method further includes stacking the first acoustic wave device relative to a second acoustic wave device such that a thermally conductive frame extends between the first acoustic wave device and the second acoustic wave device. The thermally conductive frame provides a thermal path for heat dissipation from the first acoustic wave device to the second acoustic wave device.

In a component with component structures generating dissipation heat, it is proposed to apply on an active side of the substrate a heat-conducting means to the back side of the component substrate, which has a second thermal conductivity coefficient α.sub.LS, which is substantially higher than the first thermal conductivity coefficient α.sub.S of the substrate. The heat dissipation then succeeds via the heat-conducting means and via connecting means which connect the substrate to a carrier.