A first acoustic wave device can have a piezoelectric layer between a first electrode and a second electrode. The first acoustic wave device can have a first shape and a first area. A second acoustic wave device can be coupled to the first acoustic wave device to at least partially cancel a second harmonic response of the first acoustic wave device. The second acoustic wave device can have a piezoelectric layer between a first electrode and a second electrode. The second acoustic wave device can have a second shape that is different from the first shape and a second area that is within a threshold amount of the first area.

Dispersive delay lines are disclosed. The dispersive delay line can include a piezoelectric substrate having a first interdigital transducer electrode on a first region of the piezoelectric substrate and a second interdigital transducer electrode on a second region of the piezoelectric substrate. The dispersive delay line is arranged such that a Lamb wave is configured to propagate from the first interdigital transducer electrode to the second interdigital transducer electrode though a third region of the piezoelectric substrate. The Lamb wave has a group delay that depends on frequency. Related radio frequency modules, wireless communications devices, and methods are disclosed.

Dispersive delay lines are disclosed. A dispersive delay line can include a piezoelectric substrate having a first interdigital transducer electrode on a first region of the piezoelectric substrate and a second interdigital transducer electrode on a second region of the piezoelectric substrate. The dispersive delay line is arranged such that an acoustic wave is configured to propagate from the first interdigital transducer electrode to the second interdigital transducer electrode though a third region of the piezoelectric substrate. The third region of the piezoelectric substrate is configured as a waveguide and can have a thickness of less than half the wavelength of the acoustic wave. Related radio frequency modules, wireless communications devices, and methods are disclosed.

An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode on a first side of the piezoelectric layer, an air cavity on a second side of the piezoelectric layer that is opposite to the first side of the piezoelectric layer, and a thermally conductive layer. The acoustic wave device is configured to laterally excite a bulk acoustic wave. The thermally conductive layer is configured to dissipate heat associated with exciting the laterally excited bulk acoustic wave.

The present invention relates to tunable microresonators, as well as methods of designing and tuning such resonators. In particular, tuning includes applying an electrical bias to the resonator, thereby shifting the resonant frequency.

An acoustic wave filter device is disclosed. The device includes an acoustic wave filter element, and a first resonator and a second resonator coupled to the acoustic wave filter element. The acoustic wave filter element includes interdigited input electrodes and output electrodes located on a top surface of a piezoelectric layer. Each of the first and the second resonators includes a top electrode on the top surface, and a bottom electrode on the bottom surface of the piezoelectric layer. At least one of each of the first and the second resonators' electrodes is electrically connected to the acoustic wave filter element. The first resonator has a first notch in resonator impedance at a first frequency. The second resonator includes a first mass loading layer on the second resonator electrode such that the second resonator has a second notch in resonator impedance at a second frequency different from the first frequency.

An acoustic wave filter includes a filter circuit and an additional circuit that includes IDTs and reflectors. The IDTs each include comb-shaped electrode fingers. The reflectors each include reflector electrode fingers. A relationship of about 0.60+n≤G/(Pi+Pr)≤0.93+n is satisfied, where n is an integer of 0 or more, Pi is an array pitch of the comb-shaped electrode fingers arranged along a second direction, Pr is an array pitch of the reflector electrode fingers arranged along the second direction, and G denotes, in boundary regions between the IDTs and the reflectors, an IDT-reflector gap, which is a center-to-center distance between a comb-shaped electrode finger closest to the reflectors and a reflector electrode finger closest to the IDTs.

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.

Acoustic wave devices and interdigital transducer (IDT) arrangements for surface acoustic wave (SAW) devices are disclosed. Representative SAW devices are described herein that provide sharp transitions between passband frequencies and frequencies that are outside of desired passbands. A SAW device may include several IDTs arranged between reflective structures on a piezoelectric material and one or more additional IDTs or electrode pairs that are configured to modify the influence of parasitic capacitance, or other internal device capacitance, thereby improving steepness on the upper side of a passband as well as improving rejection for frequencies outside of the passband. The one or more additional IDTs or electrode pairs may be configured as at least one of a capacitor, an IDT capacitor, an IDT with a floating electrode, or combinations thereof.

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.