A wave separator includes an n number (n being a natural number of 3 or larger) of band pass filters having an n number or larger of mutually different pass bands, and a common terminal. For a first of the band pass filters that is one of a band pass filter having a center frequency of a pass band at a lowest side and a band pass filter having a center frequency of a pass band at a highest side and that has a larger or equal difference in a center frequency of a pass band from an adjacent band pass filter as compared with the other band pass filter satisfies a predetermined configuration for a second band pass filter having a pass band adjacent to the first band pass filter.

A surface acoustic wave resonator device comprises a substrate supporting: a gateable, electrically conducting layer; an interdigital transducer (IDT); a reflector grating that comprises a plurality of electrically separated fingers; a main ohmic contact; and a gate element. The IDT is configured to be connectable to a ground. The conducting layer is configured to be connectable to the ground via the main ohmic contact, while each of said fingers is electrically connected to a lateral side of the conducting layer. This defines a gateable channel, which extends from the fingers to the ground via the conducting layer and the main ohmic contact. The gate element is electrically insulated from the conducting layer. The gate element is configured to allow an electrical impedance of the gateable channel to be continuously tuned by applying a voltage bias to this gate element with respect to the ground, in operation of the device.

A transmission filter in a high frequency module includes serial arm resonators electrically connected in series to a serial arm electrically connecting a shared terminal and a transmission terminal, parallel arm resonators each electrically connected in series to each of parallel arms electrically connecting the serial arm and a ground, a first inductor electrically connected between the ground and a connection end electrically connecting at least the two parallel arm resonators of the parallel arm resonators, and a second inductor electrically connected between the ground and one parallel arm resonator different from the at least two parallel arm resonators of the parallel arm resonators. The second inductor is electromagnetic field coupled to at least one of an antenna side matching element, a transmission side matching element, and a portion of the serial arm in the transmission filter. The first and second inductors obstruct electromagnetic field coupling therebetween.

A high-frequency module includes a longitudinally coupled surface acoustic wave filter and a low-noise amplifier that is connected to the surface acoustic wave filter. The input impedance of the surface acoustic wave filter connected to the low-noise amplifier differs from the output impedance thereof. On a Smith chart, the output impedance in the pass band of the surface acoustic wave filter is present in a region between a first output impedance and a second output impedance, the first output impedance being the output impedance of the surface acoustic wave filter where a gain of the low-noise amplifier is maximum, the second output impedance being the output impedance of the surface acoustic wave filter where a noise figure of the low-noise amplifier is minimum.

A surface acoustic wave resonator device comprises a substrate supporting: a gateable, electrically conducting layer; an interdigital transducer (IDT); a reflector grating that comprises a plurality of electrically separated fingers; a main ohmic contact; and a gate element. The IDT is configured to be connectable to a ground. The conducting layer is configured to be connectable to the ground via the main ohmic contact, while each of said fingers is electrically connected to a lateral side of the conducting layer. This defines a gateable channel, which extends from the fingers to the ground via the conducting layer and the main ohmic contact. The gate element is electrically insulated from the conducting layer. The gate element is configured to allow an electrical impedance of the gateable channel to be continuously tuned by applying a voltage bias to this gate element with respect to the ground, in operation of the device.