An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.

An acoustic resonator device includes a substrate and a piezoelectric plate. A first portion of the piezoelectric plate is on the substrate. A second portion of the piezoelectric forms a diaphragm suspended over a cavity in the substrate. An interdigital transducer (IDT) is on a surface of the piezoelectric plate, the IDT including first and second busbars on the first portion and interleaved IDT fingers on the diaphragm. A plurality of tethers support the diaphragm over the cavity, each tether providing an electrical connection between a corresponding one of the interleaved IDT fingers and one of the first and second busbars.

A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. The piezoelectric layer is a single crystal of LiNbO.sub.3 cut at an angle of 130°±30°. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.

A bulk acoustic wave resonator includes a substrate, a support layer disposed on the substrate, the support layer including a cavity having a polygon shape with more than three sides in a plane crossing a first direction from the substrate to the support layer, a piezoelectric layer disposed on the support layer, a bottom electrode disposed below the piezoelectric layer, partially overlapping the cavity, and extending across a first side of the cavity, and a top electrode disposed above the piezoelectric layer, partially overlapping the cavity, and extending across a second side of the cavity. The bulk acoustic wave resonator further includes at least one release hole formed in the piezoelectric layer and overlapping a portion of the cavity.

Assemblies including a bulk acoustic wave acoustic sensor die having a first and an opposing second major surface, the die including a piezoelectric structure, a first and a second electrode electrically connected to the piezoelectric structure, and an active surface on the first major surface of the die; a printed circuit board (PCB), the PCB having a first major surface and an opposing second major surface and including a slot spanning from the first major surface to the second major surface through the PCB; a first bond electrically and mechanically connecting the die to the PCB; and a second bond electrically and mechanically connecting the die to the PCB, wherein the first and the second bonds are located on either side of the slot through the PCB and the active surface of the die is above the slot in the PCB.

A bulk acoustic wave resonator includes a substrate, a support layer disposed on the substrate, the support layer including a cavity having a polygon shape with more than three sides in a plane crossing a first direction from the substrate to the support layer, a piezoelectric layer disposed on the support layer, a bottom electrode disposed below the piezoelectric layer, partially overlapping the cavity, and extending across a first side of the cavity, and a top electrode disposed above the piezoelectric layer, partially overlapping the cavity, and extending across a second side of the cavity. The bulk acoustic wave resonator further includes at least one release hole formed in the piezoelectric layer and overlapping a portion of the cavity.

In a crystal oscillator accordance to an embodiment, a crystal resonator plate is bonded to, via laminated bonding patterns, a first sealing member covering a first excitation electrode of the crystal resonator plate; and a second sealing member covering a second excitation electrode of the crystal resonator plate. An internal space is formed, which hermetically seals a vibrating part including the first and second excitation electrodes of the crystal resonator plate. The laminated bonding patterns include a laminated sealing pattern annularly formed to surround the vibrating part in plan view so as to hermetically seal the internal space, and a laminated conductive pattern establishing conduction between wiring and electrodes. The laminated conductive pattern is disposed within a closed space surrounded by the laminated sealing pattern. To the laminated sealing pattern, GND potential is applied when the crystal oscillator operates.

The present application relates to a resonator and an electronic device. A high and low acoustic impedance alternating layer, a bottom temperature coefficient of frequency compensation layer, a bottom electrode layer, a piezoelectric layer, a top electrode layer and a top temperature coefficient of frequency compensation layer are sequentially stacked on a substrate by using a specific microfabrication process, to form a new resonator. The resonator can simultaneously show excellent characteristics of low loss, wide bandwidth, low temperature sensitivity and a small size through the special stack geometry, thereby having better operation reliability.

A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. The piezoelectric layer is a single crystal of LiNbO.sub.3 cut at an angle of 130°±30°. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.

An acoustic resonator device includes a substrate and a piezoelectric plate. A first portion of the piezoelectric plate is attached to the substrate. A second portion of the piezoelectric forms a diaphragm suspended over a cavity in the substrate. An interdigital transducer (IDT) is formed on a surface of the piezoelectric plate, the IDT including first and second busbars disposed on the first portion and interleaved IDT fingers disposed on the diaphragm. A plurality of tethers support the diaphragm over the cavity, each tether providing an electrical connection between a corresponding one of the interleaved IDT fingers and one of the first and second busbars.