In examples, a device comprises a semiconductor die, a thin-film layer, and an air cavity positioned between the semiconductor die and the thin-film layer. The air cavity comprises a resonator positioned on the semiconductor die. A rib couples to a surface of the thin-film layer opposite the air cavity.

A continuous or distributed resonator geometry is defined such that the fabrication process used to form a spring mechanism also forms an effective mass of the resonator structure. Proportional design of the spring mechanism and/or mass element geometries in relation to the fabrication process allows for compensation of process-tolerance-induced fabrication variances. As a result, a resonator having increased frequency accuracy is achieved.

A microelectromechanical system (MEMS) resonator includes a resonant semiconductor structure, drive electrode, sense electrode and electrically conductive shielding structure. The first drive electrode generates a time-varying electrostatic force that causes the resonant semiconductor structure to resonate mechanically, and the first sense electrode generates a timing signal in response to the mechanical resonance of the resonant semiconductor structure. The electrically conductive shielding structure is disposed between the first drive electrode and the first sense electrode to shield the first sense electrode from electric field lines emanating from the first drive electrode.

Embodiments include a logic gate system comprising a first micro-cantilever beam arranged in parallel to a second micro-cantilever beam in which a length of the first micro-cantilever beam is shorter than a length of the second micro-cantilever beam. The first micro-cantilever beam is adjacent to the second micro-cantilever beam and the first micro-cantilever beam is coupled to an input DC bias voltage source to the logic gate system. The second micro-cantilever beam is coupled to an input AC voltage signal that dynamically sets a logic operation of the logic gate system by at least changing an operating resonance frequency for one or more of the first micro-cantilever beam and the second micro-cantilever beam.

A resonance device that includes a lower cover, an upper cover joined to the lower cover, a resonator having vibrating arms that bend and vibrate in a vibration space between the lower cover and the upper cover, and particles attached to tip portions of the vibrating arms. When a median size of the particle is defined as D50, a specific gravity of the particle is defined as A, and a resonant frequency of the resonator is defined as X, D50≤189/(X×√A).

A resonance device that includes a MEMS substrate including a resonator, an upper lid, and a bonding portion bonding the MEMS substrate and the upper lid to seal a vibration space of the resonator. The bonding portion includes a eutectic layer containing a eutectic alloy as a main component thereof. The eutectic alloy is composed of a first metal containing aluminum as a main component thereof, a second metal of germanium or silicon, and a third metal of titanium or nickel.

A resonator is provided that includes a base; at least three vibrating arms that include a piezoelectric film, an upper electrode, and a lower electrode; a frame; and a holding arm. Each vibrating arm includes an arm portion and a tip portion. The holding arm includes a holding side arm that extends parallel to the outer vibrating arm. A release width between the tip portion of the outer vibrating arm and the frame is larger than a release width between the holding side arm and the frame or a release width between the arm portion of the outer vibrating arm and the holding side arm.

Embodiments include a logic gate system comprising a first micro-cantilever beam arranged in parallel to a second micro-cantilever beam in which a length of the first micro-cantilever beam is shorter than a length of the second micro-cantilever beam. The first micro-cantilever beam is adjacent to the second micro-cantilever beam and the first micro-cantilever beam is coupled to an input DC bias voltage source to the logic gate system. The second micro-cantilever beam is coupled to an input AC voltage signal that dynamically sets a logic operation of the logic gate system by at least changing an operating resonance frequency for one or more of the first micro-cantilever beam and the second micro-cantilever beam.

A MEMS device that includes a substrate including an element and a connection wiring electrically connected to the element, and a connection portion electrically connected to the connection wiring. The connection portion is formed of a eutectic alloy of a first metal and a second metal. A line width of the connection wiring is smaller than a width of the connection portion when a main surface of the substrate is viewed in a plan view.

The present disclosure provides a super-regenerative transceiver with a feedback element having a controllable gain. The super-regenerative transceiver utilizes the controllable gain to improve RF signal data sensitivity and improve RF signal data capture rates. Super-regenerative transceivers described herein permit signal data capture over a broad range of frequencies and for a range of communication protocols. Super-regenerative transceivers described herein are tunable, consume very little power for operation and maintenance, and permit long term operation even when powered by very small power sources (e.g., coin batteries).