An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

An acoustic wave device including an IDT electrode on a piezoelectric film, in which a Z-axis direction of a crystal is different from a direction of a normal to a major surface. An overlap region of the IDT electrode includes a central region and first and second edge regions. First and second dielectric films are stacked between the piezoelectric film and first and second electrode fingers in the first and second edge regions. When an angle between a first side surface of the first dielectric film and a major surface of the piezoelectric film is α1 and an angle between a second side surface of the second dielectric film and the major surface of the piezoelectric film is α2, α1≠α2 between at least one electrode finger of the first and second electrode fingers and the piezoelectric film.

Acoustic resonators and filter devices, and methods for making acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern formed is formed on the front surface of the piezoelectric plate, including an interdigital transducer (IDT) with interleaved fingers of the IDT on the diaphragm. An insulating layer is formed between the piezoelectric plate and portions of the conductor pattern other than the interleaved fingers.

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

A temperature compensated oscillation circuit includes an oscillation circuit that oscillates a resonator, a fractional N-PLL circuit that multiplies frequency of an oscillation signal which is output by the oscillation circuit, on the basis of a frequency division ratio which is input, a temperature measurement unit that measures temperature, and a storage unit that stores a temperature correction table for correcting frequency temperature characteristics of the oscillation signal, in which the frequency division ratio of the fractional N-PLL circuit is set on the basis of a measurement value obtained by the temperature measurement unit and the temperature correction table.

Resonator devices, filter devices, and methods of fabrication are disclosed. A resonator device includes a substrate and a single-crystal piezoelectric plate having front and back surfaces. An acoustic Bragg reflector is sandwiched between a surface of the substrate and the back surface of the piezoelectric plate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate. The IDT and the piezoelectric plate are configured such that a radio frequency signal applied to the IDT excites a primary acoustic mode within the piezoelectric plate. The acoustic Bragg reflector comprises alternating SiO.sub.2 and diamond layers and is configured to reflect the primary acoustic mode.

A multi-stage matching network filter circuit device. The device comprises bulk acoustic wave (BAW) resonator device having an input node, an output node, and a ground node. A first matching network circuit is coupled to the input node. A second matching network circuit is coupled to the output node. A ground connection network circuit coupled to the ground node. The first or second matching network circuit can include an inductive ladder network including a plurality of series inductors in a series configuration and a plurality of grounded inductors wherein each of the plurality of grounded inductors is coupled to the connection between each connected pair of series inductors. The inductive ladder network can include one or more LC tanks, wherein each of the one or more LC tanks is coupled between a connection between a series inductor and a subsequent series inductor, which is also coupled to a grounded inductor.

Resonator and filter devices and methods of fabrication. A resonator chip includes a substrate, a piezoelectric plate, and an acoustic Bragg reflector between the substrate and a back surface of the piezoelectric plate. A conductor pattern on a front surface of the piezoelectric plate includes a first plurality of contact pads and an interdigital transducer (IDT). The IDT and the piezoelectric plate are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the piezoelectric plate. The acoustic Bragg reflector is configured to reflect the shear primary acoustic mode. An interposer has a second plurality of contact pads on a back surface. A seal connects a perimeter of the piezoelectric plate to a perimeter of the interposer. Each contact pad of the first plurality of contact pads is directly connected to a respective contact pad of the second plurality of contact pads.

A multi-stage matching network filter circuit device. The device comprises bulk acoustic wave (BAW) resonator device having an input node, an output node, and a ground node. A first matching network circuit is coupled to the input node. A second matching network circuit is coupled to the output node. A ground connection network circuit coupled to the ground node. The first or second matching network circuit can include an inductive ladder network including a plurality of series inductors in a series configuration and a plurality of grounded inductors wherein each of the plurality of grounded inductors is coupled to the connection between each connected pair of series inductors. The inductive ladder network can include one or more LC tanks, wherein each of the one or more LC tanks is coupled between a connection between a series inductor and a subsequent series inductor, which is also coupled to a grounded inductor.

A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.