H03H9/566

5.2 GHz Wi-Fi COEXISTENCE ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

CAPACITIVELY-COUPLED RESONATOR FOR IMPROVEMENT IN UPPER BAND EDGE STEEPNESS

A filter is provided that includes resonators connected in series between first and second ports. Each of the resonators includes a piezoelectric layer; and an interdigital transducer (IDT) having a plurality of interleaved fingers at a surface of the piezoelectric layer. The piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer. The filter includes a capacitor connected between ground and a node between the first bulk acoustic resonator and the second bulk acoustic resonator.

Overmoded Bulk Acoustic Resonators and Method of Fabricating

Disclosed herein is an Overmoded Bulk Acoustic Resonator (OBAR) and a solidly-mounted OBAR (SBAR), which operate in a partially transduced 2nd overtone split between piezoelectric and electrode layers using dual all metal Bragg mirrors. The devices may be deployed in a series configuration. The devices have arbitrarily thick electrodes to minimize ohmic loss and bandwidths high enough to meet filtering requirements of 5G networks. The devices provide sharp filtering which can be performed directly at each antenna element in a form factor much smaller than the half-wavelength separation between adjacent antenna elements required when using electromagnetic resonators.

FILTER MODULE WITH IMPROVED LINEARITY RESPONSE
20240305273 · 2024-09-12 ·

Aspects and embodiments disclosed herein include filter module comprising an input port to receive a radio frequency signal, a first output port connected to an antenna, a filter disposed along a fundamental signal path from the input port to the first output port, and a second output port to output a harmonic signal generated in response to the RF signal, the second output port being electrically connected to a node on the fundamental signal path via a harmonic signal path including a resonating structure configured to improve a linearity response of the filter module, the resonating structure including resonators electrically connected to each other in anti-series or anti-parallel and disposed on a piezoelectric film, a polarity direction of a first half of the resonators opposite to a polarity direction of a second half of the resonators when a voltage is applied across the piezoelectric film.

Resonance circuit complex electronic component and resonance circuit device
10075148 · 2018-09-11 · ·

A resonance circuit complex electronic component includes a first circuit element and a second circuit element defining a resonance circuit, an external connection terminal connected to outside, and a plurality of routing conductors connecting an external terminal of the first circuit element and an external terminal of the second circuit element to the external connection terminal, respectively. At least one of the plurality of routing conductors includes an inductor conductor extending in a direction not in parallel with a mounting surface.

Methods of plasma dicing bulk acoustic wave components

Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components

ACOUSTIC FILTER EMPLOYING INDUCTIVE COUPLING
20180076793 · 2018-03-15 ·

Disclosed in one embodiment is filter circuitry having first and second paths extending between first and second nodes. The first path has a first inductor and a second inductor coupled in series between the first node and the second node, wherein the first inductor and the second inductor are positively coupled with one another, and a first common node is provided between the first inductor and the second inductor. First shunt acoustic resonators are coupled between the first common node and a fixed voltage node. The second path includes a third inductor and a fourth inductor coupled in series between the first node and the second node. The third inductor and the fourth inductor are negatively coupled with one another, and a second common node is provided between the third inductor and the fourth inductor. Second acoustic resonators are coupled between the second common node and a fixed voltage node.

ACOUSTIC WAVE DEVICE
20250007493 · 2025-01-02 ·

An acoustic wave device includes a piezoelectric layer including first and second main surfaces, first and second electrode fingers on the first main surface and respectively connected to an input potential and an output potential, and a third electrode finger on at least one of the first and second main surfaces and connected to a reference potential. The first and second electrode fingers when seen from an electrode finger orthogonal direction orthogonal or substantially orthogonal to a direction in which the first and second electrode fingers extend. A region where the first and second electrode fingers overlap in the electrode finger orthogonal direction is a facing region. The third electrode finger overlaps with at least a portion of at least one facing region when seen from a main surface facing direction in which the first and second main surfaces face each other.

FILTER, RADIO FREQUENCY DEVICE AND ELECTRONIC APPARATUS
20250030395 · 2025-01-23 · ·

A filter, a radio frequency device and an electronic apparatus. The filter includes a series branch, N parallel branches and a bridged branch; the series branch includes M series resonators; each of the N parallel branches includes a parallel resonator; the bridged branch includes a bridged resonator and a first inductor, the first end of each of the parallel branches is grounded, the second end of each of the parallel branches is connected with the series branch, the third end is located at a side of the bridged resonator away from the first inductor, the fourth end is located at a side of the first inductor away from the bridged resonator, the third end is connected to the first end of the ith parallel branch, the fourth end is connected to the second end of the (i+k)th parallel branch.

Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method

Methods of fabricating filter devices are disclosed. A back surface of a piezoelectric plate having a first thickness is attached to a substrate. The front surface of the piezoelectric plate is selectively etched to thin a portion of the piezoelectric plate from the first thickness to a second thickness less than the first thickness. Cavities are formed in the substrate such that portions of the piezoelectric plate form a plurality of diaphragms spanning respective cavities. A conductor pattern is formed on the front surface. The conductor pattern includes a first interdigital transducer (IDT) with interleaved fingers on a first diaphragm having the first thickness and a second IDT with interleaved fingers on a second diaphragm having the second thickness.