A method of fabricating a configurable single crystal acoustic resonator (SCAR) device integrated circuit. The method includes providing a bulk substrate structure having first and second recessed regions with a support member disposed in between. A thickness of single crystal piezo material is formed overlying the bulk substrate with an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region. A first electrode with a first terminal is formed overlying an upper portion of the piezo material, while a second electrode with a second terminal is formed overlying a lower portion of the piezo material. An acoustic reflector structure and a dielectric layer are formed overlying the resulting bulk structure. The resulting device includes a plurality of single crystal acoustic resonator devices, numbered from (R1) to (RN), where N is an integer greater than 1.

An apparatus is disclosed for harmonic reduction with filtering. In example aspects, the apparatus includes a filter circuit with first and second filter ports, first and second lattice filters, and first and second signal manipulator circuits. The first signal manipulator circuit includes a first port, a second port, and a third port coupled to the first filter port. The first signal manipulator circuit splits an input signal into multiple split signals, shifts a phase thereof to produce at least one phase-shifted split signal, and provides the phase-shifted split signal to the first and second ports. The first lattice filter is coupled to the first port, and the second lattice filter is coupled to the second port. The second signal manipulator circuit includes a first port coupled to the first lattice filter, a second port coupled to the second lattice filter, and a third port coupled to the second filter port.

According to the present disclosure, a passband filter is provided. The passband filter comprises a first connection, a second connection, and a third connection. One or more resonators of a first type are provided connected in series between the first connection and the second connection; and one or more resonators of a second type are provided connected from between the first connection and the second connection to the third connection. A radio-frequency front end module and wireless mobile device are also provided.

An integrated circuit film bulk acoustic resonator (FBAR) device having multiple resonator thicknesses is formed on a common substrate in a stacked configuration. In an embodiment, a seed layer is deposited on a substrate, and one or more multi-layer stacks are deposited on the seed layer, each multi-layer stack having a first metal layer deposited on a first sacrificial layer, and a second metal layer deposited on a second sacrificial layer. The second sacrificial layer can be removed and the resulting space is filled in with a piezoelectric material, and the first sacrificial layer can be removed to release the piezoelectric material from the substrate and suspend the piezoelectric material above the substrate. More than one multi-layer stack can be added, each having a unique resonant frequency. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate.

A circuit includes a semiconductor substrate and an integrated passive device. The integrated passive device is on a surface of the semiconductor substrate. The integrated passive device is in a metal layer on the semiconductor substrate. The metal layer is at least tens of micrometers thick. The integrated passive device may be an inductor or a capacitor in some examples.

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

A method of plugging a hydrocarbon well includes deploying a downhole tool to remove at least a portion of a casing at a section of well to be plugged. Deploying a blocking device downhole to block a bottom of the section of well to be plugged. Deploying a plugging material downhole onto the blocking device to fill an area to be plugged. Deploying an exothermic fluid downhole, wherein activation of the exothermic material liquefies the plugging material. Allowing the plugging material and the exothermic fluid to solidify form a cast-in-place plug that fills the section of well to be plugged.

A multiplexer includes a first filter located between a common terminal and a first terminal to pass a signal in a first passband, and a second filter located between the common terminal and a second terminal to pass a signal in a second passband. A first series arm circuit included in the first filter includes a first series arm resonator and a second series arm resonator. The first series arm circuit is connected to the common terminal not through a circuit including an elastic wave resonator and a connecting point of the circuit. The first series arm circuit has a first antiresonance frequency and a second antiresonance frequency higher than the first antiresonance frequency. The second antiresonance frequency is higher than a higher edge of the first passband. The first antiresonance frequency is at or lower than a higher edge of the second passband.

The present invention relates to a filter circuit (100) comprising a first and a second bulk acoustic wave resonator (2, 3), the first resonator (2) having a first piezoelectric layer (4) structured such that the first resonator (2) has a lower resonant frequency than the second resonator (3), wherein the first piezoelectric layer (4) is structured by recesses (14) passing through the first piezoelectric layer (4), the first resonator (2) and the second resonator (3) as series resonators (102, 105) connected in series with a signal path of the filter circuit (100) or wherein the first resonator (2) and the second resonator (3) as parallel resonators (103, 106) are connected to the signal path of the filter circuit (100) in such a way that in each case one electrode of the resonators is connected to the signal path.

An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.490 GHz to 5.835 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.