An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, a functional electrode on the piezoelectric layer, and first and second electrode films on the piezoelectric layer, facing each other, and having different electric potentials from each other. When a region between the first and second electrode films in a plan view is an inter-electrode film region, and a region overlapping with the first electrode film or the second electrode film in a plan view is an electrode film underlying region, a thickness of the piezoelectric layer in at least a portion of the inter-electrode film region is smaller than a thickness of the piezoelectric layer in the electrode film underlying region.

Aspects of this disclosure relate to a multiplexer with a hybrid acoustic passive filter. The multiplexer includes a plurality of filters configured to filter respective radio frequency signals, a shared filter coupled between each of the plurality of filters and a common node, and a radio frequency filter coupled to the common node. At least a first filter of the plurality of filters includes acoustic resonators and a non-acoustic passive component. Related multiplexers, wireless communication devices, and methods are disclosed.

An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, functional electrodes on the piezoelectric layer, and first and second electrode films positioned on the piezoelectric layer to face each other and having different potentials from each other. A thickness of the piezoelectric layer in at least a portion of a first region overlapping the first electrode film in plan view is different from a thickness of the piezoelectric layer in at least a portion of a second region not overlapping the first electrode film in plan view.

An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.835 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.

An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.855 GHz to 5.925 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.

An acoustic resonator filter includes: a series unit including at least one series acoustic resonator electrically connected, in series, between first and second ports configured to pass a radio frequency (RF) signal; a first shunt unit disposed on a first shunt connection path between the at least one series acoustic resonator and a ground, the first shunt unit including a plurality of shunt acoustic resonators connected to each other in series and having different resonance frequencies; and a second shunt unit disposed in a second shunt connection path between the at least one series acoustic resonator and the ground, the second shunt unit including at least one shunt acoustic resonator and having higher inductance than inductance of the first shunt unit.

A bulk acoustic wave resonator includes a substrate, a first electrode and a second electrode formed on the substrate, and a piezoelectric layer provided between the first electrode and the second electrode. Either one or both of the first electrode and the second electrode include a molybdenum-tungsten alloy having a weight ratio of molybdenum to tungsten in a range of 3:1 to 1:3.

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

An RF triplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

An RF ladder filter having a parallel capacitance compensation circuit is disclosed. The parallel capacitance compensation circuit is made up of a first inductive element with a first T-terminal and a first end coupled to a first ladder terminal and a second inductive element with a second T-terminal that is coupled to the first T-terminal of the first inductive element and a second end coupled to a second ladder terminal. Further included is a compensating acoustic RF resonator (ARFR) having a fixed node terminal and a third T-terminal that is coupled to the first T-terminal of the first inductive element and the second T-terminal of the second inductive element, and a finite number of series-coupled ladder ARFRs, wherein the parallel capacitance compensation circuit is coupled across one of the finite number of series-coupled ARFRs by way of the first ladder terminal and the second ladder terminal.