An acoustic wave filter device includes a filter disposed on a substrate, a wall member disposed on the substrate and surrounding the filter, a cap member disposed on the wall member and bounding an internal space with the wall member; and a support member disposed on the cap member. The support member is disposed above the internal space and includes a bump disposed on the cap member.

An acoustic wave device includes a piezoelectric substrate, a first interdigital transducer (IDT) electrode, reflectors on both sides of the first IDT electrode in a propagation direction of an acoustic wave, and a second IDT electrode facing the first IDT electrode with a reflector interposed therebetween. The first and second IDT electrodes include first and second intersecting areas in which electrode fingers overlap in the propagation direction. The first and second intersecting areas overlap in the propagation direction. A third busbar of the second IDT electrode is coupled to a first busbar of the first IDT electrode. A fourth busbar of the second IDT electrode is coupled to a ground potential. A resonant frequency of the second IDT electrode is in a frequency band of an interference wave signal.

An electro-acoustic transducer and an electro-acoustic component including an electro-acoustic transducer are disclosed. In an embodiment the transducer includes a first and a second bus bar, a plurality of electrode fingers and a plurality of two or more sub tracks, wherein each electrode finger is electrically connected to one of the bus bars, wherein each sub track extends along a longitudinal direction, wherein all sub tracks are arranged one next to another in a transversal direction, wherein at least a first of the sub tracks includes segments of the electrode fingers and has an associated sub track with segments of the electrode fingers, wherein the segments of the electrode fingers of the first sub track are shifted by a distance S=/2 along the longitudinal direction relative to the segments of the electrode fingers of the associated sub track, and wherein is an acoustic wavelength.

An elastic wave filter device includes serial and parallel arms and a plurality of elastic wave resonators. Each elastic wave resonator includes an IDT electrode. In the case where a direction in which electrode fingers extend is taken as a width direction of the IDT electrode, the IDT electrode includes a central area at a center in the width direction, a low acoustic velocity area at an outer side portion of the central area, and a high velocity area at a farther outer side portion thereof. A width of the low acoustic velocity area of at least one elastic wave resonator differs from a width of the low acoustic velocity area of the other elastic wave resonators.

A laterally coupled resonator filter device includes a bottom electrode, a piezoelectric layer disposed on the bottom electrode, and a top contour electrode disposed on the piezoelectric layer. The top contour electrode includes first and second top comb electrodes. The first top comb electrode include a first top bus bar and multiple first top fingers extending in a first direction from the first top bus bar. The second top comb electrode includes a second top bus bar and multiple second top fingers extending in a second direction from the second top bus bar, the second direction being substantially opposite to the first direction such that the first and second top fingers form a top interleaving pattern providing an acoustic filter having an apodized shape.

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

A stacked filter package is disclosed. The stacked filter package can include a first acoustic wave device having a first device type. The first acoustic wave device includes a first substrate having a first coefficient of thermal expansion. The stacked filter package can include a second acoustic wave device having a second device type different from the first device type. The second acoustic wave device includes a second substrate having a second coefficient of thermal expansion. The second coefficient of thermal expansion is at least double the first coefficient of thermal expansion. The stacked filter package can include a bonding structure between the first and second substrates. The bonding structure couples the first and second substrate.

An apparatus is disclosed for a double-mode surface-acoustic-wave (SAW) filter having a modulated interdigital transducer. In example aspects, the apparatus includes a double-mode surface-acoustic-wave filter that has at least one interdigital transducer. The interdigital transducer includes a first busbar, a second busbar, and multiple fingers extending from the first busbar toward the second busbar. The multiple fingers include a first set of fingers having a first spatial property. The multiple fingers also include a second set of fingers having a second spatial property different from the first spatial property. The second spatial property includes at least two fingers of the second set of fingers being positioned adjacent to each other.

An electromechanical device includes a piezoelectric support delimited by a surface, or by two surfaces parallel to each other, and, on this support, a resonator for elastic waves propagating parallel to the surface or surfaces, the resonator including two reflectors that delimit the resonator and which are reflective for the waves, several interfacing transducers, to generate the waves from an electrical signal, and several transducers for controlling the resonance frequency, each transducer including a first electrode and a second electrode that are interdigitated, the transducers being arranged along the propagation path followed by the waves in the resonator, with, along the path, an alternation between interfacing transducer and tuning transducer.