An extractor includes a band pass filter and a band elimination filter. One filter of the band pass filter and the band elimination filter includes at least one serial arm resonator and at least one parallel arm resonator that are each defined by an acoustic wave resonator. Any one of the at least one serial arm resonator and the at least one parallel arm resonator includes, among a divided resonator group divided resonator including a plurality of divided resonators coupled in series to each other, a first divided resonator group that is a largest in number of the divided resonators coupled in series and a smallest in capacitance.

An elastic wave device includes a piezoelectric film and a high acoustic velocity member in which an acoustic velocity of a bulk wave propagating in the high acoustic velocity member is larger than an acoustic velocity of a main mode elastic wave propagating in the piezoelectric film, the piezoelectric film that is directly or indirectly laminated on the high acoustic velocity member, a first conductive film provided on the piezoelectric film, and a second conductive film that is provided on the piezoelectric film and on at least a portion of the first conductive film. A plurality of IDT electrodes including electrode fingers and busbars are provided on the piezoelectric film, at least electrode fingers of a plurality of IDT electrodes are defined by the first conductive film, and at least a portion of connection wiring with which the plurality of IDT electrodes are connected to each other is defined the second conductive film.

A surface acoustic wave filter device includes surface acoustic wave filters, one of which includes a longitudinally coupled resonator-type first filter section and a longitudinally coupled resonator-type second filter section. The second filter section is electrically connected in parallel or series with the first filter section on at least one of an input signal side and an output signal side. The first filter section includes a first IDT group including three IDTs. The second filter section includes a second IDT group including three IDTs. Another surface acoustic wave filter includes a third IDT group that is cascade connected to the first filter section and the second filter section and includes IDTs arranged in order in a line in a surface acoustic wave propagation direction.

An acoustic wave filter device includes a piezoelectric layer, a high-acoustic-velocity member, a low-acoustic-velocity film between the high-acoustic-velocity member and the piezoelectric layer, and first and second IDT electrodes on the piezoelectric layer to define acoustic wave resonators. An acoustic wave resonator of a series-arm resonator portion closest to an antenna end and/or an acoustic wave resonator of a parallel-arm resonator portion closest to the antenna end includes the first IDT electrode including first and second electrode fingers, and the remaining acoustic wave resonators include the second IDT electrode including third and fourth electrode fingers. In the first IDT electrode, a central area, first and second low-acoustic-velocity areas, and first and second high-acoustic-velocity areas extend along a direction perpendicular or substantially perpendicular to an acoustic wave propagating direction. First and second envelopes connecting the tips of the third and fourth electrode fingers of the second IDT electrode are inclined.

Aspects of the disclosure relate to an electroacoustic device that includes a piezoelectric material and an electrode structure that includes a first busbar and a second busbar along with electrode fingers arranged in an interdigitated manner and including a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar. The electrode structure further includes a first conductive structure disposed between each of the first plurality of fingers and disposed between the first busbar and the second plurality of fingers. The electrode structure further includes a second conductive structure disposed between each of the second plurality of fingers and disposed between the second busbar and the first plurality of fingers. The first conductive structure and the second conductive structure each have a height that is less than a height of the second plurality of fingers.

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

An elastic wave device includes a piezoelectric substrate, a first elastic wave element on the piezoelectric substrate and including at least one first interdigital transducer electrode and a first reflector in an area of the first interdigital transducer electrode at one side in a propagation direction of elastic waves, and a second elastic wave element on the piezoelectric substrate and including at least one second interdigital transducer electrode and a second reflector in an area of the second interdigital transducer electrode at one side in the propagation direction of elastic waves. The first and second reflectors are disposed side by side in the propagation direction. A reflection member, between the first and second reflectors, reflects elastic waves in at least a direction different from the propagation direction.

A SAW transducer and a SAW resonator are proposed composed of consecutively arranged unit cells of length L. Slight geometry or material variations such as variations of the metallization ration or the unit cell length L affecting the pitch) between these unit cells result in improved spurious mode suppression while the main mode performance is unaffected.

Aspects of the disclosure relate to an electroacoustic device that includes a piezoelectric material and an electrode structure. The electrode structure includes a first busbar and a second busbar. The electrode structure further includes electrode fingers arranged in an interdigitated manner and including a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar. A first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers both being less than a pitch of the electrode fingers. The electrode fingers have a central region with a first trap region and a second trap region respectively located on boundaries of the central region. A structural characteristic of the electroacoustic device is different in the first trap region and the second trap region relative to the central region.

Aspects of the disclosure relate to an electroacoustic device that includes a piezoelectric material and an electrode structure. The electrode structure includes a first busbar and a second busbar. The electrode structure further includes a first conductive structure connected to the first busbar and a second conductive structure connected to the second busbar. The first conductive structure and the second conductive structure is disposed between the first busbar and the second busbar. The first conductive structure and the second conductive structure each include a plurality of conductive segments separated from each other and extending towards one of the first busbar or the second busbar. The electrode structure further includes electrode fingers arranged in an interdigitated manner and each connected to either the first conductive structure or the second conductive structure. The electrode fingers have a pitch that is different than a pitch of the plurality of conductive segments.