A multiplexer includes a first filter on a first path connecting a common terminal and a first terminal and defined by a band pass filter, a low pass filter, or a high pass filter, and a second resonator on a second path connecting the common terminal and a second terminal and defined by a band elimination filter including at least one elastic wave resonator. A pass band of the first filter and an attenuation band of the second filter overlap with each other, and a ripple of a first resonator closest to the common terminal is generated only outside pass bands of the first filter and the second filter.

A multiplexer includes acoustic wave filters that are electrically connected to a common connection terminal. In a first transmission-side filter of the acoustic wave filters, a series arm resonator closest to the common connection terminal includes acoustic wave resonators that are electrically connected in series and capacitance elements that are electrically connected between at least one of signal paths electrically connecting the acoustic wave resonators to each other and a reference terminal.

A quadplexer includes a first filter and a second filter having a pass band frequency that is higher than a pass band frequency of the first filter. The first filter includes series resonators disposed on a first path and parallel resonators disposed on a path that connects the first path and a ground to each other. A direction that connects ends of a plurality of electrode fingers defining each resonator crosses an elastic wave propagation direction at a predetermined angle. The series resonator nearest to a common terminal does not include first electrode fingers, and the other series resonators include the first electrode fingers.

An acoustic wave device comprises a piezoelectric substrate, interdigital transducer electrodes having an electrode pitch .sub.0, and first and second reflector gratings disposed on opposite respective sides of the interdigital transducer electrodes in a propagation direction of a main acoustic wave through the acoustic wave device, the first reflector grating having a different electrode pitch .sub.1 than an electrode pitch .sub.2 of the second reflector grating to suppress ripples in a conductance curve of the acoustic wave device.

A multiplexer includes: a first filter that includes a piezoelectric thin film resonator and is connected between a common terminal and a first terminal, the piezoelectric thin film resonator being located on a substrate; a second filter that includes an acoustic wave resonator and is connected between the common terminal and a second terminal, the acoustic wave resonator including an IDT located on a piezoelectric substrate; and a capacitor that includes a pair of electrodes facing each other in a planar direction and is coupled to the first filter, the pair of electrodes being located on the piezoelectric substrate.

An acoustic wave filter device includes at least one series arm resonator and a parallel arm resonator. The series arm resonators and the parallel arm resonator are defined by acoustic wave resonators, an interdigital transducer electrode of the series arm resonators is an apodized interdigital transducer electrode subjected to apodization weighting, in the interdigital transducer electrode of the parallel arm resonator, an intersecting portion includes a central region and low acoustic velocity regions provided at both outer side portions of the central portion, an acoustic velocity of an acoustic wave in the low acoustic velocity region is lower than an acoustic velocity of an acoustic wave in the central region, and a high acoustic velocity region where an acoustic velocity of an acoustic wave is higher than that of the low acoustic velocity region is provided at an outer side portion of each of the low acoustic velocity regions.

An acoustic wave device includes a support substrate made of silicon, a piezoelectric body provided directly or indirectly on the support substrate, the piezoelectric body including a pair of main surfaces facing each other, and an interdigital transducer electrode provided directly or indirectly on at least one of the main surfaces of the piezoelectric body, a wave length that is determined by an electrode finger pitch of the interdigital transducer electrode being . An acoustic velocity V.sub.Si=(V.sub.1).sup.1/2 of bulk waves that propagate in the support substrate, which is determined by V.sub.1 out of solutions V.sub.1, V.sub.2, V.sub.3 of x derived from the expression, Ax.sup.3+Bx.sup.2+Cx+D=0, is higher than or equal to about 5500 m/s.

An electronic device comprises a first surface acoustic wave (SAW) resonator and a second SAW resonator, each including interleaved interdigital transducer (IDT) electrodes, the first and second SAW resonators being formed on a same piezoelectric substrate, the first SAW resonator having IDT electrodes with a different finger pitch than the IDT electrodes of the second SAW resonator; a dielectric material layer disposed on the IDT electrodes of the first and second SAW resonators; and a high velocity layer disposed within the dielectric material layer disposed on the IDT electrodes of the first SAW resonator, the second SAW resonator lacking a high velocity layer disposed within the dielectric material layer disposed on the IDT electrodes.

An extractor includes a band pass filter and a band elimination filter. In the band pass filter, an IDT electrode in at least one of a first series arm resonator and a first parallel arm resonator that are arranged at a series arm and a parallel arm, respectively, closest to a common terminal is a first IDT electrode in which neither a plurality of first electrode fingers nor a plurality of second electrode fingers is partially missing, and an IDT electrode in at least one of the first series arm resonator or the first parallel arm resonator that does not include the first IDT electrode, second series arm resonators, and second parallel arm resonators is a second IDT electrode in which at least one of a plurality of electrode fingers and a plurality of second electrode fingers is partially missing.

A surface acoustic wave device includes: a substrate; an electrode disposed on the substrate in a first direction; a dummy bar disposed to be spaced apart from the electrode by a predetermined distance in the first direction; and an additional film formed on the dummy bar, wherein the electrode and the dummy bar are disposed in plurality in parallel in a second direction perpendicular to the first direction, and the dummy bars are alternately disposed on a left side or a right side of the electrode to be spaced apart from the electrode by the predetermined distance, and the additional film is formed on the predetermined distance between the electrode and the dummy bar and on the plurality of dummy bars.