A switching converter includes a transistor arrangement having a plurality of n transistors, with n≧2, each including a gate terminal, and a load path between a source and a drain terminal, and at least m, with m≦n and m≧1 of the n transistors having a control terminal. The control terminal of each of the m transistors is configured to receive a control signal that adjusts an activation state of the transistor. The load paths of the plurality of n transistors are connected in parallel to form a load path of the transistor arrangement. A drive circuit is configured to adjust the activation state of the m transistors.

A hybrid switch apparatus includes a gate drive circuit producing a gate drive signal, a GaN high electron mobility transistor (HEMT) having a first gate, a first drain, and a first source. A silicon (Si) MOSFET has a second gate, a second drain, and a second source. The GaN HEMT and the Si MOSFET are connected in a parallel arrangement so that (i) the first drain and the second drain are electrically connected and (ii) the first source and the second source are electrically connected. The second gate is connected to the gate drive circuit output to receive the gate drive signal. A delay block has an input connected to the gate drive circuit output and an delay block output is configured to produce a delayed gate drive signal for driving the GaN HEMT.

Aspects of the invention can include a pulse generating means that outputs a set signal and reset signal for driving the high potential side switching element is such that, while either one of the set signal or reset signal is in an on-state as a main pulse signal for putting the high potential side switching element into a conductive state or non-conductive state, the other signal is turned on a certain time after the rise of the main pulse signal, thereby generating a condition in which the set signal and reset signal are both in an on-state.

Integrated circuits (ICs) that avoid or mitigate creation of changes in accumulated charge in a silicon-on-insulator (SOI) substrate, particularly an SOI substrate having a trap rich layer. In one embodiment, a FET is configured such that, in a standby mode, the FET is turned OFF while maintaining essentially the same V.sub.DS as during an active mode. In another embodiment, a FET is configured such that, in a standby mode, current flow through the FET is interrupted while maintaining essentially the same V.sub.GS as during the active mode. In another embodiment, a FET is configured such that, in a standby mode, the FET is switched into a very low current state (a “trickle current” state) that keeps both V.sub.GS and V.sub.DS close to their respective active mode operational voltages. Optionally, S-contacts may be formed in an IC substrate to create protected areas that encompass FETs that are sensitive to accumulated charge effects.

A Radio Frequency (RF) switch having two or more stages coupled in series is disclosed. A first Field-Effect Transistor (FET) with a first control terminal is coupled across a gate resistor to shunt the gate resistor when the first FET is on. An RF switching device is configured to pass an RF signal between a signal input and a signal output when the RF switching device is on. A second FET having a second control terminal coupled to an acceleration output is configured to shunt the RF switching device when the second FET is on. A third FET is coupled between the first control terminal and the signal input for controlling charge on a gate of the first FET. A third control terminal of the third FET is coupled to an acceleration input for controlling an on/off state of the third FET.

A drive unit includes a first transistor, a second transistor, a current source that is connected to a high-potential-side electrode of the first transistor, and delivers constant current, a current control circuit configured to perform control to start of charging of the gates of the first and second transistors using the current source, and a gate charge circuit that charges the gates of the first and second transistors, separately from the current source.

A gate driver circuit for a half bridge or full bridge output driver stage having a high side branch connected to one or more high side transistors and a low side branch connected to one or more low side transistors. A high side gate driver and a low side gate driver receive input signals at a low voltage level and output signals at a high voltage level as gate driving signals for the high side transistors and low side transistors. Each of the high side and the low side branches of the gate driver includes a set-reset latch having a signal output that is fed as a gate signal to the corresponding transistor of the half bridge or full bridge driver. A differential capacitive level shifter circuit receives the input signals at a low voltage level and outputs high voltage signals to drive the set and reset inputs of the set-reset latch.

A switching circuit includes: a normally-off junction field-effect GaN transistor including source, drain, and gate terminals; a drive device of one output type electrically connected to the gate terminal; a first rectifier, between the source terminal and the gate terminal, including an anode on a source terminal side and a cathode on a gate terminal side; a capacitor between a cathode side of the first rectifier and the drive device; a first resistor between the capacitor and the drive device; a second resistor, one side of the second resistor being connected to the drive device, another side of the second resistor being connected between the cathode side of the first rectifier and the capacitor; and a second rectifier including an anode on a capacitor side and a cathode on a drive device side. No resistor is provided between the cathode side of the second rectifier and the drive device.

A driver circuit includes three sub-circuits. A first sub-circuit is configured to generate a drive current output by the driver circuit through an output node during first and second regions of operation and includes: a diode coupled to the output node and a first transistor, and a second transistor coupled to the first transistor and a current mirror. A second sub-circuit is configured to generate the drive current during the first and second and a third region of operation and includes: a third transistor coupled to the output node; and a fourth transistor. A third sub-circuit is configured to generate the drive current during the third region of operation and includes: a current source coupled to the current mirror and a buffer; and a fifth transistor coupled to the third transistor and the fourth transistor and configured to receive an output of the buffer.

A power drive circuit includes a power conversion module, a plurality of gate drivers, a waveform processing unit, a control unit, a weighting unit, and a comparator. Each gate driver includes a drive resistance setting value. The waveform processing unit outputs a current absolute value waveform of an AC power. The weighting unit generates a trigger voltage. When the comparator determines that the current absolute value waveform is greater than the trigger voltage, the comparator outputs a slew rate control signal to each of the gate drivers. When the gate driver receives the slew rate control signal, each of the gate drivers decreases the drive resistance setting value of the gate driver.