A controller for a power converter includes a driver circuit that generates a control signal to switch a power switch in response to an output, and a control circuit that controls the switching of the power switch. The control circuit includes a storage time reference circuit generates a storage time reference signal responsive to an input. A first comparator generates a collector off signal in response to a comparison of a switch current sense signal and a collector off reference signal. A storage time regulator circuit generates a base off reference signal in response to the storage time reference signal and the collector off signal. A second comparator generates a base off signal in response to a second comparison of the switch current sense signal and the base off reference signal. The driver circuit is coupled to discontinue and start charging a base terminal of the BJT power switch.

A circuit arrangement for an electronic device having at least two semiconductor elements of the same type connected in parallel with each other. At least one first semiconductor element has a first characteristic and at least one second semiconductor element has a second characteristic. Each of the two characteristics is defined by at least one power loss. The at least one power loss of the at least one first semiconductor element has a first value, and the at least one power loss of the at least one second semiconductor element has a second value. The two values of the at least one power loss are different.

In a driving apparatus for switches connected in parallel to each other, drivers respectively turn on or off the switches. A temperature obtainer obtains a value of a temperature parameter correlating with a temperature of at least one of the first and second switches. A selector selects at least one of the switches as at least one drive target switch. A driver causes at least one of the drivers to turn on the at least one drive target switch during an on duration and thereafter turn off the at least one drive target switch in each target switching cycle. The selector adjusts the number of the selected at least one drive target switch based on the value of the temperature parameter.

A circuit arrangement and an electrical system, where in the circuit arrangement, an output terminal of a current limiting control circuit is connected to a control input of a semiconductor switch via a resistor (RG), and a gate driver is connected to the control input of the semiconductor switch via the gate resistor RG and to the resistor (R). The current limiting control circuit is configured to change its output impedance at the output terminal in order to control the semiconductor switch. A source terminal of the semiconductor switch is connected to a reference potential (GND) of the circuit arrangement, and the semiconductor switch is configured so as to set a current (I) in a circuit between an electrical power source and a load. A first inductor (L1) and a second inductor (L2) are connected in series within the circuit.

Provided is a driving apparatus that drives a switching device, the driving apparatus including a reference potential line, a first switching control unit configured to switch whether to connect a control terminal of the switching device to the reference potential line, a first resistor element arranged in series to the first switching control unit in a path from the control terminal of the switching device to the reference potential line, a first capacitor provided in parallel with the first resistor element in the path from the control terminal of the switching device to the reference potential line, and a discharge control unit configured to control whether to discharge the first capacitor.

A switching device driving apparatus for preventing arm short circuit is provided, including: a first switching device driving unit for receiving a control signal for controlling a first switching device and a second switching device so that they will not turn ON at the same time and outputting an ON/OFF drive signal to the first switching device; and a second switching device driving unit for receiving the control signal and outputting an ON/OFF drive signal to the second switching device, in which the first switching device driving unit outputs a drive signal for increasing the delay of the ON timing of the first switching device with respect to the OFF timing of the second switching device with increase in ambient temperature.

A system for converting a first voltage into a second voltage includes input terminals and output terminals, switching members disposed between the terminals which can convert voltage, and a device for controlling the switching members. The device includes a cell for controlling a switching member, and a member for managing and supplying the control cell. The member is connected to the control cell by a link allowing the simultaneous transmission of a control signal and electrical energy. The member includes a device for generating a pulse, and which includes at least two different control intervals.

A controller for a power converter includes a driver circuit that generates a control signal to switch a power switch in response to an output, and a control circuit that controls the switching of the power switch. The control circuit includes a storage time reference circuit generates a storage time reference signal responsive to an input. A first comparator generates a collector off signal in response to a comparison of a switch current sense signal and a collector off reference signal. A storage time regulator circuit generates a base off reference signal in response to the storage time reference signal and the collector off signal. A second comparator generates a base off signal in response to a second comparison of the switch current sense signal and the base off reference signal. The driver circuit is coupled to discontinue and start charging a base terminal of the BJT power switch.

A semiconductor device includes a substrate, an insulator layer, and a field plate structure. The substrate has a background doping of a first conductivity type and includes a first doped region of a second conductivity type complementary to the first conductivity type. The insulator layer is formed on a main surface of the substrate. The field plate structure is formed on the insulator layer between the first doped region and an edge structure. The field plate structure has a high-resistive and/or semi-insulating connection with at least one non-floating conductive structure.